GP1M005A050CH GP1M005A050PH Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery VDSS = 550 V @Tjmax ID = 4.5A RDS(ON) = 1.65 W(max) @ VGS= 10 V D I-PAK D-PAK G S Device Package Marking Remark GP1M005A050CH D-PAK GP1M005A050CH Halogen Free GP1M005A050PH I-PAK GP1M005A050PH Halogen Free Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGS 30 V 4.5 A 2.86 A TC = 25 Continuous Drain Current ID TC = 100 Pulsed Drain Current (Note 1) IDM 18 A Single Pulse Avalanche Energy (Note 2) EAS 240 mJ Repetitive Avalanche Current (Note 1) IAR 4.5 A EAR 9.25 mJ 92.5 W 0.74 W/ dv/dt 4.5 V/ns TJ, TSTG -55~150 TL 300 Symbol Value Unit Maximum Thermal resistance, Junction-to-Case RqJC 1.35 /W Maximum Thermal resistance, Junction-to-Ambient RqJA 62.5 /W Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 Derate above 25 Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds PD * Limited only by maximum junction temperature Thermal Characteristics Parameter August 2010 : Rev0 www.GPTechGroup.com 1/6 GP1M005A050CH GP1M005A050PH Electrical Characteristics : TC=25, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units VGS = 0 V, ID = 250 A 500 -- -- V VDS = 500 V, VGS = 0 V -- -- 1 A OFF Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS = 400 V, TC = 125C -- -- 10 A Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA VGS(th) VDS = VGS, ID = 250 A 2.0 -- 4.0 V RDS(on) VGS = 10 V, ID = 2.25 A -- 1.4 1.65 W gFS VDS = 30 V, ID = 2.25 A -- 6 -- S Input Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 627 -- pF Output Capacitance Coss f = 1.0 MHz -- 61 -- pF Reverse Transfer Capacitance Crss -- 4.4 -- pF VDD = 250 V, ID = 4.5 A, -- 42 -- ns RG = 25 -- 32 -- ns td(off) -- 68 -- ns tf -- 30 -- ns ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) DYNAMIC SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time tr (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge Gate-Drain Charge td(on) (Note 4,5) (Note 4,5) Qg VDS = 400V, ID = 4.5 A, -- 11 -- nC Qgs VGS = 10 V -- 3.2 -- nC -- 2.7 -- nC Qgd SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ---- -- -- 4.5 A ISM ---- -- -- 18 A VSD VGS = 0 V, IS = 4.5 A -- -- 1.5 V trr VGS = 0 V, IS = 4.5 A -- 255 -- ns Qrr dIF / dt = 100 A/s -- 1.43 -- C Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=21mH, I AS = 4.5A, VDD = 50V, RG = 25, Starting TJ= 25 3 I SD 4.5A, di/dt 200A/s , VDD BVDS, Starting TJ= 25 4. Pulse Test :Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics August 2010 : Rev0 www.GPTechGroup.com 2/6 GP1M005A050CH GP1M005A050PH 12 VDS = 30V 250 s Pulse Test 10 1. TC = 25 2. 250 s Pulse Test Drain Current, ID [A] Drain Current, ID [A] 10 8 6 Top VGS=15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottom 5.0V 4 2 10 20 30 40 25 0 0 150 1 0.1 50 0 2 Drain-Source Voltage, VDS [V] 6 8 1.5 2.0 20 4 TJ = 25 VGS = 0V 250 s Pulse Test Reverse Drain Current, IDR [A] Drain-Source On-Resistance RDS(ON) [ ] 4 Gate-Source Voltage, VGS [V] 3 VGS = 10V 2 VGS = 20V 1 15 10 150 5 25 0 0.0 0 0 2 4 6 8 10 12 0.5 1000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS = 0 V f = 1 MHz Ciss 600 Coss 400 200 Crss 0 -1 10 ID = 4.5A Gate-Source Voltage, VGS [V] 800 Capacitance [pF] 1.0 Source-Drain Voltage, VSD [V] Drain Current,ID [A] VDS = 100V 10 VDS = 250V 8 VDS = 400V 6 4 2 0 0 10 1 10 0 August 2010 : Rev0 3 6 9 12 15 Total Gate Charge, QG [nC] Drain-Source Voltage, VDS [V] www.GPTechGroup.com 3/6 GP1M005A050CH GP1M005A050PH 1.15 3.0 VGS = 0 V ID = 250 A 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 120 VGS = 10 V ID = 2.25 A 2.5 Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source Breakdown Voltage BVDSS, (Normalized) 1.20 2.0 1.5 1.0 0.5 0.0 -80 160 -40 0 40 80 o Junction Temperature,TJ [ C] 120 160 o Junction Temperature, TJ [ C] 5 Drain Current, ID [A] 4 3 2 1 0 25 50 75 100 125 150 Case Temperature, TC [ ] 2 10 Operation in This Area is Limited by R DS(on) 30 us Transient thermal impedance ZthJC(t) Drain Current, ID [A] 0 10 100 us 1 10 1 ms 10 ms 100 ms DC 0 10 o TC = 25 C -1 10 o TJ = 150 C Single Pulse Duty=0.5 0.2 0.1 0.05 -1 10 PDM t 0.02 T 0.01 single pulse Duty = t/T ZthJC(t) = 1.35 /W Max. -2 10 -2 10 0 10 1 10 2 10 3 10 -5 10 Drain-Source Voltage, VDS [V] August 2010 : Rev0 -4 10 -3 10 -2 10 -1 10 0 10 1 10 Pulse Width, t [sec] www.GPTechGroup.com 4/6 GP1M005A050CH GP1M005A050PH TO-252 (D-PAK) MECHANICAL DATA August 2010 : Rev0 www.GPTechGroup.com 5/6 GP1M005A050CH GP1M005A050PH TO-251 (I-PAK) MECHANICAL DATA Disclaimer : Global Power Technologies Group reserves the right to make changes without notice to products herein to improve reliability, performance, or design. The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a guarantee of conditions and characteristics. With respect to any information regarding the application of the device, Global Power Technologies Group hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of patent rights of any third party. August 2010 : Rev0 www.GPTechGroup.com 6/6