RB520S30,115 - NEXPERIA

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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reserved

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1. Product proﬁle

1.1 General description

Planar Maximum Efﬁciency General Application (MEGA) Schottky barrier rectiﬁer with an

integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small

and ﬂat lead Surface-Mounted Device (SMD) plastic package.

1.2 Features

nAverage forward current: IF(AV) ≤0.2 A

nReverse voltage: VR≤30 V

nLow reverse current: IR≤1µA

nAEC-Q101 qualiﬁed

nUltra small and ﬂat lead SMD plastic package

1.3 Applications

nLow current rectiﬁcation

nHigh efﬁciency DC-to-DC conversion

nSwitch Mode Power Supply (SMPS)

nReverse polarity protection

nLow power consumption applications

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for

cathode 1 cm2.

[2] Pulse test: tp≤300 µs; δ≤0.02.

RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

Rev. 01 — 6 October 2009 Product data sheet

Table 1. Quick reference data

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

IF(AV) average forward current square wave;

δ= 0.5;

f=20kHz

Tamb ≤105 °C[1] - - 0.2 A

Tsp ≤135 °C - - 0.2 A

IRreverse current VR=10V --1µA

VRreverse voltage - - 30 V

VFforward voltage IF= 0.2 A [2] - 520 600 mV

Product data sheet Rev. 01 — 6 October 2009 2 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 cathode [1]

2 anode 21

sym001

Table 3. Ordering information

Type number Package

Name Description Version

RB520S30 SC-79 plastic surface-mounted package; 2 leads SOD523

Table 4. Marking codes

Type number Marking code

RB520S30 ZA

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage Tj=25°C - 30 V

IF(AV) average forward current square wave;

δ= 0.5;

f=20kHz

Tamb ≤105 °C[1] - 0.2 A

Tsp ≤135 °C - 0.2 A

IFSM non-repetitive peak

forward current tp= 8.3 ms

half sine wave;

JEDEC method

[2] -1A

Ptot total power dissipation Tamb ≤25 °C[3][4] - 275 mW

[3][1] - 420 mW

[3][5] - 500 mW

Product data sheet Rev. 01 — 6 October 2009 3 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[2] Tj=25°C prior to surge.

[3] Reﬂow soldering is the only recommended soldering method.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.

6. Thermal characteristics

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a signiﬁcant part of the total power losses.

[2] Reﬂow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[6] Soldering point of cathode tab.

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2]

[3] - - 455 K/W

[4] - - 300 K/W

[5] - - 250 K/W

Rth(j-sp) thermal resistance from

junction to solder point [6] --90K/W

Product data sheet Rev. 01 — 6 October 2009 4 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

FR4 PCB, standard footprint

Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for cathode 1 cm2

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab700

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.2

0.25

0.1 0.05

0.02 0.01

006aab701

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.2

0.25

0.1 0.05

0.02 0.01

Product data sheet Rev. 01 — 6 October 2009 5 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

7. Characteristics

[1] Pulse test: tp≤300 µs; δ≤0.02.

Table 7. Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage [1]

IF= 0.1 mA - 190 220 mV

IF= 1 mA - 250 290 mV

IF= 10 mA - 320 360 mV

IF= 100 mA - 440 500 mV

IF= 200 mA - 520 600 mV

IRreverse current VR=10V --1µA

Cddiode capacitance f = 1 MHz; VR=1V - - 20 pF

(1) Tj= 150 °C

(2) Tj= 125 °C

(3) Tj=85°C

(4) Tj=25°C

(5) Tj=−40 °C

(1) Tj= 125 °C

(2) Tj=85°C

(3) Tj=25°C

(4) Tj=−40 °C

Fig 3. Forward current as a function of forward

voltage; typical values Fig 4. Reverse current as a function of reverse

voltage; typical values

006aab702

10−3

10−2

10−1

(A)

10−4

VF (V)

0.0 0.80.60.2 0.4

(1)

(2)

(3) (4) (5)

006aab703

VR (V)

0302010

10−6

10−8

10−7

10−4

10−5

10−3

(A)

10−9

(1)

(2)

(3)

(4)

Product data sheet Rev. 01 — 6 October 2009 6 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

f = 1 MHz; Tamb =25°CT

j= 150 °C

(1) δ= 0.1

(2) δ= 0.2

(3) δ= 0.5

(4) δ=1

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. Average forward power dissipation as a

function of average forward current; typical

values

Tj= 125 °C

(1) δ=1

(2) δ= 0.9

(3) δ= 0.8

(4) δ= 0.5

FR4 PCB, standard footprint

Tj= 150 °C

(1) δ= 1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Fig 7. Average reverse power dissipation as a

function of reverse voltage; typical values Fig 8. Average forward current as a function of

ambient temperature; typical values

VR (V)

0302010

006aab704

(pF)

006aab705

IF(AV) (A)

0.0 0.30.20.1

0.08

0.12

0.04

0.16

0.20

PF(AV)

(W)

0.0

(1)

(2)

(3)

(4)

006aab706

VR (V)

0302010

0.004

0.006

0.002

0.008

0.01

PR(AV)

(W)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

0 50 100 150 1751257525

006aab707

0.1

0.2

0.3

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Product data sheet Rev. 01 — 6 October 2009 7 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

8. Test information

FR4 PCB, mounting pad for cathode 1 cm2

Tj= 150 °C

(1) δ= 1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Tj= 150 °C

(1) δ= 1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Fig 9. Average forward current as a function of

ambient temperature; typical values Fig 10. Average forward current as a function of

solder point temperature; typical values

Tamb (°C)

0 50 100 150 1751257525

006aab708

0.1

0.2

0.3

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tsp (°C)

0 50 100 150 1751257525

006aab709

0.1

0.2

0.3

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

(1) IR=1mA

Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ= 0.05

Oscilloscope: rise time tr= 0.35 ns

Fig 11. Reverse recovery time test circuit and waveforms

trr

(1)

+ IFt

output signal

trtpt

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 ΩIF

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Product data sheet Rev. 01 — 6 October 2009 8 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

The current ratings for the typical waveforms as shown in Figure 8,9 and 10 are

calculated according to the equations: with IM deﬁned as peak current,

at DC, and with IRMS deﬁned as RMS current.

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualiﬁcation for discrete semiconductors

, and is

suitable for use in automotive applications.

9. Package outline

Fig 12. Duty cycle deﬁnition

006aaa812

duty cycle δ =

IFAV() IMδ×=

IRMS IFAV()

=IRMS IMδ×=

Fig 13. Package outline SOD523 (SC-79)

02-12-13Dimensions in mm

1.65

1.55 1.25

1.15

0.17

0.11

0.34

0.26

0.65

0.58

0.85

0.75

Product data sheet Rev. 01 — 6 October 2009 9 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 8000 10000

RB520S30 SOD523 2 mm pitch, 8 mm tape and reel - -315 -

4 mm pitch, 8 mm tape and reel -115 - -135

Reﬂow soldering is the only recommended soldering method.

Fig 14. Reﬂow soldering footprint SOD523 (SC-79)

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

0.6

(2×)

0.5

(2×)

2.15

1.1

0.7

(2×)

0.8

(2×)

1.2

sod523_fr

Product data sheet Rev. 01 — 6 October 2009 10 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

RB520S30_1 20091006 Product data sheet - -

Product data sheet Rev. 01 — 6 October 2009 11 of 12

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors RB520S30

200 mA low VF MEGA Schottky barrier rectiﬁer

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 October 2009

Document identifier: RB520S30_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12