SEMITRANSTM 3
IGBT Modules
SKM 200GB173D
SKM 200GB173D1
SKM 200GAL173D
SKM 200GAR173D
Features
   
  
  
!     
 
   "! #
  $ % &
' #
( ) #  *+ 
&  " 
,*- , * -
.!
  /0  
  12 
Typical Applications
+*     343 '
432 +*
,* "  432 ' /122 ,*
5"  %! !6
  #  
GB GAL GAR
Absolute Maximum Ratings .7 13 8*   #
Symbol Conditions Values Units
IGBT
*9 /422
&*.7 13 ;2 8* 112 /32 +
&*< 7 /  022 +
=9 > 12
.? . .59<+.& @ . ' A2 666 B /32 /13 8*
 +* / 6 A222
Inverse diode
&(.7 13 ;2 8* /32 /22 +
&(< 7 /  022 +
&( 7 /2 C 6C .?7 /32 8* /A32 +
Freewheeling diode
&(.7 13 ;2 8* 102 /32 +
&(< 7 /  A22 +
&( 7 /2 C C .?7 /32 8* 1122 +
Characteristics .7 13 8*   #
Symbol Conditions min. typ. max. Units
IGBT
=9 =9 7 *9 &*7 /2 + A; 33 $1
&*9 =9 7 2 *9 7 *9 .?7 13 /13 8* 2/ 20 +
*9. .?7 13 /13 8* /$3 /D /D 1/3
*9 =9 7 /3 .?7 13 /13 8* //4 /40 /00 /D E
*9 &* 7 /32 + =9 7 /3   0A A3 0D 3
*  #  12 (
* =9 7 2 *9 7 13 # 7 / F 1 (
* 233 (
*9 12 
<**GB99G 6 ' .7 13 /13 8* 203 23 E
 ** 7 /122 &* 7 /32 + 3;2 
<= 7 <=## 7AE.?7 /13 8* /22 
## =9 7 > /3 432 
#A2 
9 9## D3 A3 H
Inverse diode
(7 9* &( 7 /32 +C =9 72 C.?7 13 /13
8*
11 /D 14
. .?7 /13  8* /0 /3
..?7 /13  8* A3 $1 E
&<< &( 7 /32 +C .?7 13 /13 8* $2 ;3 +
I J 7 /222 +JK /3 0; K*
9 =9 7 2 H
FWD
(7 9* &(7 /32 +C =9 72 .?7 13 /13 8* 1 /; 1A
. .?7 /13  8* /0 /3
..?7 /13  8* 03 A3 E
&<< &(7 /32 +C .?7 13 /13 8* 43 //2 +
I J 7 +JK 12 32 K*
9 =9 7 H
Thermal characteristics
<?'  &=-. 2/ LJM
<?',  & , 201 LJM
<?'(,  (M, 21/ LJM
<'   220; LJM
Mechanical data
 N $ 0 3 
  $ 
013
SKM 200GB173D
1 14-09-2005 RAA © by SEMIKRON
http://store.iiic.cc/
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 200GB173D
2 14-09-2005 RAA © by SEMIKRON
http://store.iiic.cc/
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 200GB173D
3 14-09-2005 RAA © by SEMIKRON
http://store.iiic.cc/
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532 Dimensions in mm
* , 3$
=- * , 3$
=+ * , 34 O , 3$
=+< * , 3; O , 3$
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 200GB173D
4 14-09-2005 RAA © by SEMIKRON
http://store.iiic.cc/