BFR92AW,135 - NXP Semiconductors / Philips Semiconductors

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NXP Semiconductors

BFR92AW

NPN 5 GHz wideband transistor

Rev. 03 — 12 March 2008 Product data sheet

NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

FEATURES

•High power gain

•Gold metallization ensures

excellent reliability

•SOT323 (S-mini) package.

APPLICATIONS

It is designed for use in RF amplifiers,

mixers and oscillators with signal

frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated

in a plastic SOT323 (S-mini) package.

The BFR92AW uses the same crystal

as the SOT23 version, BFR92A.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Marking code: P2.

Fig.1 SOT323

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCEO collector-emitter voltage open base −−15 V

ICcollector current (DC) −−25 mA

Ptot total power dissipation up to Ts=93°C; note 1 −−300 mW

hFE current gain IC= 15 mA; VCE =10V 65 90 135

re feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz;

Tamb =25°C−0.35 −pF

fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 −GHz

GUM maximum unilateral power

gain IC= 15 mA; VCE = 10 V; f = 1 GHz;

Tamb =25°C−14 −dB

IC= 15 mA; VCE = 10 V; f = 2 GHz;

Tamb =25°C−8−dB

F noise ﬁgure IC= 5 mA; VCE = 10 V; f = 1 GHz;

Γs=Γopt

−2−dB

Tjjunction temperature −−150 °C

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −15 V

VEBO emitter-base voltage open collector −2V

Ccollector current (DC) −25 mA

Ptot total power dissipation up to Ts=93°C; see Fig.2; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to

soldering point up to Ts=93°C; note 1 190 K/W

Fig.2 Power derating curve

0 50 100 200

200

MLB540

150T ( C)

Ptot

(mW)

300

400

100

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

CHARACTERISTICS

Tj=25°C (unless otherwise speciﬁed).

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector leakage current IE= 0; VCB =10V −−50 nA

hFE DC current gain IC= 15 mA; VCE = 10 V 65 90 135

Cccollector capacitance IE=i

e= 0; VCB = 10 V; f = 1 MHz −0.6 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −0.9 −pF

Cre feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz −0.35 −pF

fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 −GHz

GUM maximum unilateral power

gain; note 1 IC= 15 mA; VCE =10V;

f = 1 GHz; Tamb =25°C−14 −dB

IC= 15 mA; VCE =10V;

f = 2 GHz; Tamb =25°C−8−dB

F noise ﬁgure IC= 5 mA; VCE =10V;

f = 1 GHz; Γs=Γopt

−2−dB

IC= 5 mA; VCE =10V;

f = 2 GHz; Γs=Γopt

−3−dB

GUM 10 s21 2

11 2

–()1s

22 2

–()

------------------------------------------------------------ dB.log=

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.3 DC current gain as a function of collector

current; typical values.

VCE =10V.

handbook, halfpage

0102030

120

MCD074

hFE

I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

IC= 0; f = 1 MHz.

1.0

020

MGC883

48 V (V)

Cre

(pF)

0.8

0.6

0.4

0.2

12 16

Fig.5 Transition frequency as a function of

collector current; typical values.

VCE = 5 V; f = 500 MHz; Tamb =25°C.

handbook, halfpage

MGC884

101

(GHz)

I (mA)

C102

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.6 Gain as a function of collector current;

typical values.

VCE = 10 V; f = 500 MHz.

handbook, halfpage

0510

MGC885

15 20

gain

(dB)

I (mA)

MSG

GUM

Fig.7 Gain as a function of collector current;

typical values.

VCE = 10 V; f = 1 GHz.

handbook, halfpage

0510

MGC886

15 20

gain

(dB)

I (mA)

MSG

GUM

Fig.8 Gain as a function of frequency;

typical values.

VCE =10V;I

C= 5 mA.

handbook, halfpage

010

MGC887

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

Fig.9 Gain as a function of frequency;

typical values.

VCE =10V;I

C=15mA.

handbook, halfpage

010

MGC888

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.10 Minimum noise figure as a function of

collector current; typical values.

VCE =10V.

handbook, halfpage

MGC889

101

(dB)

I (mA)

f = 2 GHz

500 MHz

1 GHz

102

Fig.11 Minimum noise figure as a function of

frequency; typical values.

VCE =10V.

handbook, halfpage

MGC890

103

102

(dB)

f (MHz)

IC = 15 mA

5 mA

10 mA

104

Fig.12 Common emitter noise figure circles; typical values.

f = 500 MHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.

handbook, full pagewidth

MGC891

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

2 5

180o

0.5

0.50.2

0.2

F = 2 dB

opt

F = 1.6 dB

min

F = 4 dB

F = 3 dB

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.13 Common emitter noise figure circles; typical values.

f = 1 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.

handbook, full pagewidth

MGC892

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

21 5

180o

0.5

0.2

0.5

0.2

(4)

(3)

(2)

(1)

(6)

(5)

(7)

(8)

(1) Γopt; Fmin = 2.1 dB.

(2) F = 2.5 dB.

(3) F = 3 dB.

(4) F = 4 dB.

(5) Γms;G

max = 15.7 dB.

(6) G = 15 dB.

(7) G = 14 dB.

(8) G = 13 dB.

Fig.14 Common emitter noise figure circles; typical values.

f = 2 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.

handbook, full pagewidth

MGC893

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

21 5

180o

0.5

0.2

(3)

(2)

(1)

(5)

(4)

(6)

(7)

(8)

(1) Γopt; Fmin = 3 dB.

(2) F = 3.5 dB.

(3) F = 4 dB.

(4) F = 5 dB.

(5) Γms;G

max = 9.1 dB.

(6) G = 8 dB.

(7) G = 7 dB.

(8) G = 6 dB.

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.15 Common emitter input reflection coefficient (s11); typical values.

VCE = 10 V; IC= 15 mA; Zo=50Ω.

handbook, full pagewidth

MGC894

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

0.2

0.5

0.2

180 0.2 1

00.5

40 MHz

3 GHz

Fig.16 Common emitter forward transmission coefficient (s21); typical values.

VCE = 10 V; IC=15mA.

handbook, full pagewidth

MGC895

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz 3 GHz

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.17 Common emitter reverse transmission coefficient (s12); typical values.

VCE = 10 V; IC=15mA.

handbook, full pagewidth

MGC896

90o

135o

180o

90o

0.25 0.20 0.15 0.10 0.05

45o

135o45o

40 MHz

3 GHz

Fig.18 Common emitter output reflection coefficient (s22); typical values.

VCE = 10 V; IC= 15 mA; Zo=50Ω.

handbook, full pagewidth

MGC897

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

Rev. 03 - 12 March 2008

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NXP Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

PACKAGE OUTLINE

Fig.19 SOT323.

Dimensions in mm.

handbook, full pagewidth

0.25

0.10

0.2

0.2 A

0.65

1.3

2.2

1.8

0.40

0.30

1.35

1.15

2.2

2.0

detail X

1.1

max

0.1

0.0

1.0

0.8

0.3

0.1

0.2

MBC871

Rev. 03 - 12 March 2008

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NXP Semiconductors BFR92AW

NPN 5 GHz wideband transistor

Legal information

Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

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General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

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Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

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authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

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subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

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Notice: All referenced brands, product names, service names and trademarks

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Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 03 - 12 March 2008

12 of 13

NXP Semiconductors BFR92AW

NPN 5 GHz wideband transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 March 2008

Document identifier: BFR92AW_N_3

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFR92AW_N_3 20080312 Product data sheet - BFR92AW_2

Modiﬁcations: •Quick reference data and Characteristics Table; DC current gain value changed

BFR92AW_2 19950918 Product speciﬁcation - BFR92AW_1

BFR92AW_1 19921001 - - -