Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V
∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C26 mV / oC
IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1µA
TJ = 55°C 10 µA
IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA
ON CHARACTERISTICS (Note)
∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C-2.6 mV / oC
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA0.65 0.8 1.5 V
RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A 0.33 0.45 Ω
TJ =125°C 0.52 0.8
VGS = 2.7 V, ID = 0.2 A 0.44 0.6
ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V 0.5 A
gFS Forward Transconductance VDS = 5 V, ID= 0.5 A 1.45 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V,
f = 1.0 MHz 50 pF
Coss Output Capacitance 28 pF
Crss Reverse Transfer Capacitance 9 pF
SWITCHING CHARACTERISTICS (Note)
tD(on)Turn - On Delay Time VDD = 6 V, ID = 0.5 A,
VGS = 4.5 V, RGEN = 50 Ω3 6 ns
trTurn - On Rise Time 8.5 18 ns
tD(off) Turn - Off Delay Time 17 30 ns
tfTurn - Off Fall Time 13 25 ns
QgTotal Gate Charge VDS = 5 V, ID = 0.5 A,
VGS = 4.5 V 1.64 2.3 nC
Qgs Gate-Source Charge 0.38 nC
Qgd Gate-Drain Charge 0.45 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current 0.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note)0.83 1.2 V
Note:
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDV303N Rev.D1