HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
1
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
General Description
High efficiency dual Schottky rectifier suited for
switch mode power supplies and other power convert-
ers. This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are required.
MBR3045C is available in TO-220-3, TO-220-3 (2)
and TO-220F-3 packages.
Features
·Low Forward Voltage: 0.57V @ 125oC
·Low Power Loss/High Efficiency
·150oC Operating Junction Temperature
·30A Total (15A Each Diode Leg)
·Guard-ring for Stress Protection
·High Surge Capacity
·Pb-free Package
Applications
·Power Supply Output Rectification
·Power Management
·Instrumentation
Main Product Characteristics
Mechanical Characteristics
·Case: Epoxy, Molded
·Epoxy Meets UL 94V-0 @ 0.125in.
·Weight (Approximately): 1.9Grams
·Finish: All External Surfaces Corrosion Resistant
and Terminal
·Leads are Readily Solderable
·Lead Temperature for Soldering Purposes:
260oC Maximum for 10 Seconds
IF(AV) 2×15A
VRRM 45V
TJ 150oC
VF(max) 0.57V
Figure 1. Package Types of MBR3045C
TO-220-3 (Optional)TO-220F-3 TO-220-3 (2)
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
2
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
Pin Configuration
Figure 2. Pin Configuration of MBR3045C (Top View)
T Package
Figure 3. Internal Structure of MBR3045C
(TO-220-3) (Optional)
1
2
3
A1
K
A2
1
2
3
A1
K
A2
TF Package
(TO
-
220F-3)
(TO-220-3
(2))
A1
A2
K
1
2
3
A1
K
A2
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
3
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
Package Part Number Marking ID Packing Type
Lead Free Green Lead Free Green
TO-220-3 (2) MBR3045CT-E1 MBR3045CT-G1 MBR3045CT-E1 MBR3045CT-G1 Tube
TO-220F-3 MBR3045CTF-E1 MBR3045CTF-G1 MBR3045CTF-E1 MBR3045CTF-G1 Tube
Ordering Information
Circuit Type
Package
E1: Lead Free
MBR3045C -
Blank: Tube
T: TO-220-3 (2)
TF: TO-220F-3
G1: Green
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
TO-220-3 (Optional)
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
4
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR) TC=126oC
IF(AV) 15 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=138oCIFRM 30 A
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz) IFSM 200 A
Operating Junction Temperature (Note 2) TJ150 oC
Storage Temperature Range TSTG -65 to 150 oC
Voltage Rate of Change (Rated VR) dv/dt 10000 V/μs
ESD (Machine Model=C) 400 V
ESD (Human Body Model=3B) 8000 V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA.
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter Symbol Condition Value Unit
Maximum Thermal Resistance
θJC Junction to Case
TO-220-3/
TO-220-3 (2) 3.0
oC/W
TO-220F-3 2.0
θJA Junction to Ambient TO-220-3/
TO-220-3 (2) 60
Thermal Characteristics
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
5
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
Parameter Symbol Condition Value Unit
Maximum Instantaneous Forward
Voltage Drop (Note 3) VF
IF=15A, TC=25oC0.7
V
IF=15A, TC=125oC0.57
IF=30A, TC=25oC0.84
IF=30A, TC=125oC0.72
Maximum Instantaneous Reverse
Current (Note 3) IR
Rated DC Voltage, TC=125oC20
mA
Rated DC Voltage, TC=25oC0.1
Electrical Characteristics (Each Diode Leg)
Note 3: Pulse Test: Pulse Width=300μs, Duty Cycle≤2.0%.
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
6
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
02040
0.1
1
10
100
1000
10000
100000
IR, Reverse Current (μA)
VR, Reverse Voltage (V)
25oC
125oC
150oC
0.01
0.1
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, Instantaneous Forward Voltage (V)
IF, Instantaneous Forward Current (A)
25oC
125oC
150oC
Figure 4. Typical Forward Voltage
Figure 5. Typical Reverse Current
Typical Performance Characteristics
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
7
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
Typical Performance Characteristics (Continued)
Figure 6. Average Forward Current vs. Case Temperature (Square, Each Diode)
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
8
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
Mechanical Dimensions
TO-220-3 Unit: mm(inch)
(Optional)
φ
3.560(0.140)
14.230(0.560)
1.160(0.046)
0.813(0.032)
8.763(0.345)
2.540(0.100)
0.356 (0.014)
2.080(0.082)
3°
7°
3.560(0.140)
7°
9.660(0.380)
0.550(0.022)
60°
0.381(0.015)
2.580(0.102)
60°
8.520(0.335)
φ
1.500(0.059)
0.200(0.008)
1.850(0.073)
2.540(0.100)
0.381(0.015)
0.610 (0. 024)
3.380(0.133)
10.660(0.420)
4.060(0.160) 1.350(0.053)
27.880(1.098)
30.280(1.192)
9.520(0.375)
16.510(0.650)
4.820(0.190)
2.880(0.113)
1.760(0.069)
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
9
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
3°
3°
3°
9.800(0.386)
10.200(0.402)
3.560(0.140)
3.640(0.143)
11.100(0.437)
REF
0.700(0.028)
0.900(0.035)
1.170(0.046)
1.390(0.055)
2.540(0.100)
REF
2.540(0.100)
REF
9.600(0.378)
10.600(0.417)
12.600(0.496)
13.600(0.535)
9.000(0.354)
9.400(0.370)
1.200(0.047)
1.400(0.055)
0.600(0.024)
REF
6.300(0.248)
6.700(0.264)
4.400(0.173)
4.600(0.181)
2.200(0.087)
2.500(0.098)
0.400(0.016)
0.600(0.024)
1.620(0.064)
1.820(0.072) 1.200(0.047)
1.400(0.055)
3.000(0.118)
REF
Mechanical Dimensions (Continued)
TO-220-3 (2) Unit: mm(inch)
∅
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR3045C
10
BCD Semiconductor Manufacturing LimitedMay. 2011 Rev. 1. 3
Data Sheet
4.300(0.169)
0.450(0.018)
0.600(0.024)
2.540(0.100)
9.700(0.382)
10.300(0.406)
6.900(0.272)
7.100(0.280)
3.000(0.119)
3.400(0.134)
14.700(0.579)
16.000(0.630)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
2.790(0.110)
4.500(0.177)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
2.540(0.100)
3.000(0.119)
3.550(0.140)
3.370(0.133)
3.900(0.154)
2.350(0.093)
2.900(0.114)
4.900(0.193)
2.520(0.099)
2.920(0.115)
Mechanical Dimensions (Continued)
TO-220F-3 Unit: mm(inch)
∅
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277