TPCF8201
2003-11-10
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPCF8201
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-model: Vth = 0.5 to 1.2 V
(VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 20 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V
Gate-source voltage VGSS ±12 V
DC (Note 1) ID 3
Drain current
Pulse (Note 1) IDP 12
A
Single-device operation
(Note 3a)
PD (1) 1.35
Drain power
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) PD (2) 1.12
Single-device operation
(Note 3a)
PD (1) 0.53
Drain power
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) PD (2) 0.33
W
Single pulse avalanche energy (Note 4) EAS 1.46 mJ
Avalanche current IAR 1.5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR 0.11 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),
please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 6)
8
1
5
4
F4A
123
4
8
7
6
5
TPCF8201
2003-11-10
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Thermal Characteristics
Characteristics Symbol Max Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1) 92.6
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 111.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1) 235.8
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 378.8
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 1.5 A
Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature.
Note 6: Black round marking “●” locates on the left lower side of parts number marking “F4A” indicates terminal
No. 1.
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
25.4
25.4
TPCF8201
2003-11-10
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Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±10 V, VDS = 0 V ±10 µA
Drain cut-off current IDSS V
DS = 20 V, VGS = 0 V 10 µA
V (BR) DSS I
D = 10 mA, VGS = 0 V 20
Drain-source breakdown voltage
V (BR) DSX I
D = 10 mA, VGS = -12 V 8
V
Gate threshold voltage Vth V
DS = 10 V, ID = 200 µA 0.5 1.2 V
RDS (ON) V
GS = 2.0 V, ID = 1.5 A 62 100
RDS (ON) V
GS = 2.5 V, ID = 1.5 A 50 66
Drain-source ON resistance
RDS (ON) V
GS = 4.5 V, ID = 1.5 A 38 49
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 1.5 A 2.7 5.4 S
Input capacitance Ciss 590
Reverse transfer capacitance Crss 70
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
85
pF
Rise time tr 3.0
Turn-on time ton 7.5
Fall time tf 4.4
Switching time
Turn-off time toff
Duty
<
=1%, tw = 10 µs 26
ns
Total gate charge
(gate-source plus gate-drain) Qg 7.5
Gate-source charge1 Qgs1 1.3
Gate-drain (“miller”) charge Qgd
VDD ∼
−16 V, VGS = 5 V,
ID = 3.0 A
2.1
nC
Source-Drain Ratings and Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP 12 A
Forward voltage (diode) VDSF IDR = 3.0 A, VGS = 0 V -1.2 V
RL = 0.67Ω
VDD ∼
−10 V
0 V
VGS 5 V
4.7 Ω
ID = 1.5 A
TPCF8201
2003-11-10
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Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
ID – VDS
5
4
2
1
0
0 0.2
1.7
0.4 0.6 0.8
VGS = 1.4 V
1.5
1.6
1.8
4
6
1
3
5 1.9
2
10 Common source
Ta = 25°C
Pulse test
8
6
4
2
0
10
0 3 4 5
VGS = 1.4V
1.5
1.6
1.7
2.1
10 3
1.9
1.8
2
1
2
Common source
Ta = 25°C
Pulse test
ID – VGS
Gate-source voltage VGS (V)
Drain current ID (A)
0
0 1 2 3 4 5
2
10
Ta = −55°C
25
100
4
6
8
Common source
VDS = 10 V
Pulse test
Drain-source voltage VDS (V)
VDS – VGS
Gate-source voltage VGS (V)
0
0.4
0.6
0.8
1
0
ID = 3 A
2 4 6 8 10
0.75
1.5
0.2
Common source
Ta = 25℃
Pulse test
Forward transfer admittance
Yfs (S)
Drain current ID (A)
Yfs – ID
1
10
100
0.1 1 10
25
100
Ta = −55°C
Common source
VDS = 10 V
Pulse test
Drain-source ON resistance
RDS (ON) (mΩ)
Drain current ID (A)
RDS (ON) – ID
1
0.1 1 10
100
10
1000
VGS = 4.5V
2.0
2.5
Common source
Ta = 25°C
Pulse test
TPCF8201
2003-11-10
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Drain-source ON resistance
RDS (ON) (m Ω)
Ambient temperature Ta (°C)
RDS (ON) – Ta
160 −40 0 40 80 120 −80
120
100
80
60
20
0
ID = 3A,1.5A,0.75A
VGS = 2.0 V
VGS = 4.5 V
ID = 3A,1.5A,0.75A
VGS = 2.5 V
ID = 1.5A,0.75A
ID = 3A
40
Common source
Pulse test
IDR – VDS
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
0
0.1 −0.4
0.3
0.5
1
3
5
10
−0.8 −1.2
VGS = 0 V
10
2.5
2.0
Common source
Ta = 25°C
Pulse test
Capacitance – VDS
Capacitance C (pF)
Drain-source voltage VDS (V)
10
0.1
100
1000
1 3 5 10 30 50 100
Ciss
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Vth – Ta
Gate threshold voltage
Vth (V)
Ambient temperature Ta (°C)
0
0.4
0.6
0.8
1.2
−80 −40 0 40 80 120 160
1
0.2
Common source
VDS = 10 V
ID = 200μA
Pulse test
PD – Ta
Drain power dissipation
PD (W)
Ambient temperature Ta (°C)
0
0 40 80 120 160
0.4
0.8
1.2
1.6
2
(4)
(1)
(3)
(2)
t = 5 s Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
Drain-source voltage VDS (V)
Total gate charge Qg (nC)
Gate-source voltage VGS (V)
Dynamic input / output
characteristics
0 8
VDD = 16 V
VDS 4
8
10
0
2 4 6
4
8
12
16
20
0
2
4
6
VGS
Common source
ID = 3 A
Ta = 25°C
Pulse test
TPCF8201
2003-11-10
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Safe operating Area
Drain-source voltage VDS (V)
Drain current ID (A)
0.1
0.1 1 10 100
1
10
100
10 ms*
ID max (pulse)*
VDSS max
1 ms*
*: Single pulse
Ta = 2 5℃
Curves must be derated linearly with
increase in temperature.
rth – tw
Pulse width tw (s)
Transient thermal impedance
rth (°C/W)
1
1 m 10 m 100 m 1 10 100 1000
10
100
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
(4)
(1)
(2)
(3)
TPCF8201
2003-11-10
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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• The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
