BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic package, intended for low level general purpose appli- cations in thick and thin-film circuits. QUICK REFERENCE DATA BCW29 BCW30 D.C. current gain at Tj = 25 9 l=2mA;-Vce =5V hee 2 es an Collector-base voltage (open emitter) VcBo max. 32 Vv Collector-emitter voltage (open base) VcEQ max. 32 Vv Collector current (peak value) lcem max. 200 mA Total power dissipation up to Tamp = 25 OC Prot max. 250 mw Junction temperature Tj max. 150 9 Transition frequency at f = 100 MHz lc = 10 mA;-Vcp=5V ft > 100 MHz Noise figure at Rg = 2 kQ I = 200 wA; Vce = 5 V; f= 1kHz; B = 200 Hz F < 10 dB MECHANICAL DATA Dimensions in mm Marking code Fig. 1 SOT-23. 30 BCW29 = C1p BCW30 = C2p Pinning: 1 = base byes 2 = emitter 075 S | < 3 = collector | 0.60 Ys [A] =]02 Male) i{2 ' 14 peje) 1.4 2.5 b 1.2 max mpg018 e 3/7 way 0.48_9 > ]0.1@ | A |B | 72968851 max Reverse pinning types are available on request. TOP VIEW September 1994 263 BCW29 BCW30 RATINGS Limiting values in accordance with the Absolute Maximum System (1EC134) Collector-base voltage (open emitter) Collector-emitter voltage (VgE = 0) Collector-emitter voltage (open base) Ie=2mA Emitter-base voltage (open collector) Collector current (d.c.} Collector current (peak value) Total power dissipation up to Tamp = 25 C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS Tj = 25 OC unless otherwise specified Collector cut-off current le = 0;-Vep= 32V Ie = 0; -Vep =32V; Tj = 100 C Base-emitter voltage Ilc=2mA;-Vcp=5V Saturation voltages lc=10mA; Ip =0,5 mA I = 50 mA; ~Ig = 2,5 mA -VcBo ~VCES -VcEO -VEBO ~le lem Prot Tstg Tj Rth ja IcBo lcBo VBE ~VCEsat VBEsat -VCEsat VBEsat * Mounted on an FR4 printed-circuit board 8 mm x 10 mm x 0.7 mm. max. max. max. max. max. max. typ. typ. typ. typ. 32 32 32 5 100 200 250 65 to +150 150 500 100 10 600 to 750 80 300 720 150 810 mA mA mW C K/W nA LA mv mV mV mV mV mV 264 September 1994 Silicon planar epitaxial transistors BCW29 BCW30 BCW29 BCW30 D.C. current gain Ic = 10pnA;-Vce =5V hee typ. 90 150 - L = > 120 215 Ie= 2mA;-Vcpe=5V hee < 260 500 Collector-capacitance at f = 1 MHz le =l,=0;-Vep=10V Cy typ. 45 pF Transition frequency at f = 100 MHz i = 10mA;-Vcp=5V fT > 100 MHz Noise figure at Rg = 2 kQ le = 200 pA; -VcE=5V f= 1 kHz; B = 200 Hz F < 10 dB September 1994 265