BSS215P OptiMOSTM P2 Small-Signal-Transistor Product Summary Features V DS * P-channel R DS(on),max * Enhancement mode * Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 m V GS=-2.5 V 280 ID -1.5 A * Avalanche rated PG-SOT23 * Qualified according to AEC Q101 3 * 100% lead-free; RoHS compliant * Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS215P PG-SOT23 H6327: 3000 pcs/ reel YDs Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 C -1.5 T A=70 C -1.18 Unit A Pulsed drain current I D,pulse T A=25 C -6 Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 11 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/s, T j,max=150 C 6 kV/s Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Rev 2.3 page 1 12 V 0.5 W -55 ... 150 C 0 (<250V) V 260 C C 55/150/56 C 2011-07-08 BSS215P Parameter Values Symbol Conditions Unit min. typ. max. - - 250 -20 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 A Gate threshold voltage V GS(th) V DS=VGS, I D=-11 A -1.2 -0.9 -0.6 Drain-source leakage current I DSS V DS=-20V, V GS=0 V, T j=25 C - - -1 V DS=-20V, V GS=0V, T j=150 C - - -100 V A Gate-source leakage current I GSS V GS=-12V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=-1.1 A - 166 280 m V GS=4.5 V, I D=-1.5 A - 105 150 |V DS|>2|I D|R DS(on)max, I D=1.18 A - 4.5 - Transconductance g fs S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB. Rev 2.3 page 2 2011-07-08 BSS215P Parameter Values Symbol Conditions Unit min. typ. max. - 260 346 - 102 135 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 85 128 Turn-on delay time t d(on) - 6.7 - Rise time tr - 9.7 - Turn-off delay time t d(off) - 14.5 - Fall time tf - 14.0 - Gate to source charge Q gs - -0.49 - Gate to drain charge Q gd - -1.9 - Gate charge total Qg - -3.6 - Gate plateau voltage V plateau - -1.9 - V - - -0.5 A - - -6 - -0.8 -1.1 V - 21.0 - ns - -3.7 - nC V DD=-10 V, V GS=-4.5 V, I D=-1.5 A, R G=6 ns Gate Charge Characteristics V DD=16 V, I D=-1.5 A, V GS=0 to -4.5 V nC Reverse Diode Diode continous forward current IS T A=25 C Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.3 V GS=0 V, I F=-1.5 A, T j=25 C V R=10 V, I F=-1.5 A, di F/dt =100 A/s page 3 2011-07-08 BSS215P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS-4.5 V 2 0.5 1.5 I D [A] P tot [W] 0.375 0.25 1 0.5 0.125 0 0 0 40 80 120 0 40 T A [C] 80 120 160 T A [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 1 s 10 s 100 s 10 0 0.5 102 1 ms 0.2 0.1 Z thJA [K/W] I D [A] 10 ms 10-1 0.05 101 0.02 0.01 DC single pulse 10-2 100 10-3 10 10-1 -1 10 0 10 1 10 2 V DS [V] Rev 2.3 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2011-07-08 BSS215P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 500 7 3.3 V 6 1.8 V 450 5V 2V 400 2.5 V 5 350 4 R DS(on) [m] 10 V I D [A] 2.3 V 3 2 300 2.3 V 250 200 2.5 V 150 2V 3.3 V 5V 100 1 7V 10 V 1.8 V 50 0 0 0 1 2 0 3 1 2 3 4 6 8 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 10 6 5 8 4 g fs [S] I D [A] 6 3 4 2 150 C 2 1 25 C 0 0 0 1 2 3 V GS [V] Rev 2.3 0 2 4 I D [A] page 5 2011-07-08 BSS215P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.5 A; V GS=-4.5 V V GS(th)=f(T j); V DS=VGS; I D=-11 A parameter: I D 240 1.6 200 1.2 V GS(th) [V] 160 R DS(on) [m] 98 % 98 % 120 typ typ 0.8 2% 80 0.4 40 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [C] 60 100 140 180 T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 103 101 100 Ciss Coss Crss 102 I F [A] C [pF] 150 C, 98% 10-1 150 C 25 C, 98% 25 C 10-2 101 10-3 0 5 10 15 20 V DS [V] Rev 2.3 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2011-07-08 BSS215P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=-1.5 A pulsed parameter: T j(start) parameter: V DD 101 6 5 4V 10 V 16 V 25 C V GS [V] I AV [A] 4 100 100 C 3 2 125 C 1 10-1 0 100 101 102 103 0 1 t AV [s] 2 3 4 5 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 A 24 V GS 23 Qg 22 V BR(DSS) [V] 21 20 V g s(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q g ate Q gd 140 T j [C] Rev 2.3 page 7 2011-07-08 BSS215P SOT23 Package Outline: Footprint: Rev 2.3 Packaging: page 8 2011-07-08 BSS215P Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 2011-07-08