© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 2
1Publication Order Number:
BTB16−600CW3/D
BTB16-600CW3G,
BTB16-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
•Blocking Voltage to 800 V
•On-State Current Rating of 16 A RMS at 25°C
•Uniform Gate Trigger Currents in Three Quadrants
•High Immunity to dV/dt − 1000 V/ms minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry Standard TO-220AB Package
•High Commutating dI/dt − 8.5 A/ms minimum at 125°C
•These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB16−600CW3G
BTB16−800CW3G
VDRM,
VRRM
600
800
V
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT(RMS) 16 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
ITSM 170 A
Circuit Fusing Consideration (t = 10 ms) I2t 144 A2sec
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 10ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power
(Pulse Width ≤1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C) PG(AV) 1.0 W
Operating Junction Temperature Range TJ−40 to +125 °C
Storage Temperature Range Tstg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
TO−220AB
CASE 221A
STYLE 4
1
http://onsemi.com
BTB16−xCWG
AYWW
MARKING
DIAGRAM
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
23
Device Package Shipping
ORDERING INFORMATION
BTB16−600CW3G TO−220AB
(Pb−Free)
50 Units / Rail
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
MT1
G
MT2
BTB16−800CW3G TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
4
BTB16−600CW3G, BTB16−800CW3G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
2.1
60
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 125°C
IDRM/
IRRM −
−
−
−
0.005
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ±22.5 A Peak)
VTM − − 1.55 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
2.0
2.0
2.0
−
−
−
35
35
35
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA)
IH− − 50 mA
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
−
−
−
−
−
−
60
65
60
mA
Gate Trigger Voltage (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.5
0.5
0.5
−
−
−
1.7
1.1
1.1
V
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGD
0.2
0.2
0.2
−
−
−
−
−
−
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
(dI/dt)c8.5 − − A/ms
Critical Rate of Rise of On−State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT
, tr ≤100 ns)
dI/dt − − 50 A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt 1000 − − V/ms
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
BTB16−600CW3G, BTB16−800CW3G
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 −VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT −+ IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
BTB16−600CW3G, BTB16−800CW3G
http://onsemi.com
4
Figure 1. Typical RMS Current Derating
IT(RMS), RMS ON‐STATE CURRENT (AMP)
125
120
115
110
105
100
95
90
85
80
1614121086420
TC, CASE TEMPERATURE ( C)°
Figure 2. On-State Power Dissipation
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
1
6
14121086420
20
18
16
14
12
10
8
6
4
2
PAV, AVERAGE POWER (WATTS)
0
60°
90°
120°
180°
30°
75
70
22
24
DC
DC
60°
90°
120°
180°
30°
Figure 3. On-State Characteristics
VT
, INSTANTANEOUS ON-STATE VOLTAGE (V)
100
0
IT, INSTANTANEOUS ON‐STATE CURRENT (AMP)
0.5 1 1.5 2 2.5 3 3.5 4
10
1
0.1
MAXIMUM @ TJ = 125°C
TYPICAL AT
TJ = 25°C
MAXIMUM @ TJ = 25°C
Figure 4. Thermal Response
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
0.1
0.01 1·104
10001001010.1
Figure 5. Typical Hold Current Variation
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
30
35
40
−40
MT2 POSITIVE
MT2 NEGATIVE
IH, HOLD CURRENT (mA)
−25 −10 5 20 1251109580655035
BTB16−600CW3G, BTB16−800CW3G
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5
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current Variation
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Voltage Variation
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
010000100010010
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE
Figure 9. Critical Rate of Rise of
Commutating Voltage
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
(V/ s)μ
VD = 800 Vpk
TJ = 125°C
ITM
tw
VDRM
(di/dt)c = 6f ITM
1000
f = 1
2 tw
TJ = 125°C100°C75°C
10
100
10
1
(dv/dt) , CRITICAL RATE OF RISE OF
(V/ s)μ
c
COMMUTATING VOLTAGE
20 30 40 50 60 70 80 90 100
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
NON‐POLAR
CL
51 W
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
1
10
100
−40 −25 −10 5 20 35 50 65 80 95 110 125
IGT
, GATE TRIGGER VOLTAGE (mA)
Q2
Q1
VD = 12 V
RL = 30 W
0.4
0.6
0.8
1
1.2
1.4
1.6
−40 −25 −10 5 20 35 50 65 80 95 110 125
Q1
Q3
Q3
Q2
VD = 12 V
RL = 30 W
VGT
, GATE TRIGGER VOLTAGE (V)
BTB16−600CW3G, BTB16−800CW3G
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6
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
TO−220
CASE 221A−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
123
4
−T−SEATING
PLANE
S
R
J
U
TC
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BTB16−600CW3/D
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