CMPD7000E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, IN SERIES
SILICON SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD7000E is
an Enhanced version of the CMPD7000 Dual, Series
Configuration, Ultra-High Speed Switching Diode. This
device is manufactured by the epitaxial planar process,
in an epoxy molded surface mount SOT-23 package,
designed for high speed switching applications.
MARKING CODE: C5CE
FEATURED ENHANCED SPECIFICATIONS:
♦ BVR from 100V min to 120V min.
♦ VF from 1.1V max to 1.0V max.
♦
♦
♦
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 120 V
Average Forward Current IO 200 mA
Peak Forward Current IFM 500 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=50V 300 nA
IR V
R=50V, TA=125°C 100 μA
IR V
R=100V 500 nA
BVR IR=100µA 120 150 V
VF I
F=1.0mA 0.55 0.59 0.65 V
VF I
F=10mA 0.67 0.72 0.77 V
VF I
F=100mA 0.85 0.91 1.0 V
CT V
R=0, f=1.0MHz 1.5 2.6 pF
trr I
R=IF=10mA, RL=100Ω, Rec. to 1.0mA 2.0 4.0 ns
♦
♦
♦ Enhanced Specification
SOT-23 CASE
R4 (27-January 2010)
www.centralsemi.com
CMPD7000E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, IN SERIES
SILICON SWITCHING DIODES
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: C5CE
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
www.centralsemi.com
R4 (27-January 2010)
