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IFRMS = 2x 100 A
IFAVM = 2x 64 A
VRRM = 800-1800 V
VRSM VRRM Type
VV
900 800 MDD 44-08N1 B
1300 1200 MDD 44-12N1 B
1500 1400 MDD 44-14N1 B
1700 1600 MDD 44-16N1 B
1900 1800 MDD 44-18N1 B
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 100 A
IFAVM TC = 92°C; 180° sine 64 A
TC = 100°C; 180° sine 59 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1150 A
VR = 0 t = 8.3 ms (60 Hz), sine 1300 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1200 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 6600 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 7000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 5000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 5950 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2.5-4/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4/22-35 Nm/lb.in.
Weight Typical including screws 90 g
Features
●International standard package
JEDEC TO-240 AA
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 72873
Applications
●Supplies for DC power equipment
●DC supply for PWM inverter
●Field supply for DC motors
●Battery DC power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM 10 mA
VFIF = 200 A; TVJ = 25°C 1.60 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 4.3 mW
QSTVJ = 125°C; IF = 50 A, -di/dt = 0.64 A/ms90mC
IRM 11 A
RthJC per diode; DC current 0.59 K/W
per module other values 0.295 K/W
RthJK per diode; DC current see Fig. 6/7 0.79 K/W
per module 0.395 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
MDD 44
312
TO-240 AA
123
Diode Modules
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
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© 2000 IXYS All rights reserved 2 - 3
Fig. 1 Surge overload current
IFSM: Crest value, t: duration Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
MDD 44
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© 2000 IXYS All rights reserved 3 - 3
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.79
180°0.81
120°0.83
60°0.86
30°0.90
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.012 0.0012
2 0.045 0.095
3 0.533 0.455
4 0.2 0.495
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.59
180°0.61
120°0.63
60°0.66
30°0.70
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.012 0.0012
2 0.045 0.095
3 0.533 0.455
MDD 44
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