SPP24N60C3 - Infineon Technologies

2009-12-01Rev. 2.5 Page 1

SPP24N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

RDS(on) 0.16 Ω

ID24.3 A

Feature

• New revolutionary high voltage technology

• Worldwide best RDS(on) in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• Ultra low effective capacitances

• Improved transconductance

PG-TO220-3-1

Type Package Ordering Code

SPP24N60C3 PG-TO220-3-1 Q67040-S4639

Marking

24N60C3

Maximum Ratings

Parameter Symbol Value Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

24.3

15.4

Pulsed drain current, tp limited by Tjmax ID puls 72.9

Avalanche energy, single pulse

ID = 10 A, VDD = 50 V

EAS 780 mJ

Avalanche energy, repetitive tAR limited by Tjmax1)

ID = 24.3 A, VDD = 50 V

EAR 1

Avalanche current, repetitive tAR limited by Tjmax IAR 24.3 A

Gate source voltage static VGS ±20 V

Gate source voltage AC (f >1Hz) VGS ±30

Power dissipation, TC = 25°C Ptot 240 W

Operating and storage temperature Tj,Tstg -55... +150 °C

Reverse diode dv/dt dv/dt 15 V/ns

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2009-12-01Rev. 2.5 Page 2

SPP24N60C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 480 , ID = 24.3 , Tj = 125 °C

dv/dt50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 0.52 K/W

Thermal resistance, junction - ambient, leaded RthJA - - 62

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Tsold - - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=24.3A - 700 -

Gate threshold voltage VGS(th) ID=1200µΑ,VGS=VDS 2.1 3 3.9

Zero gate voltage drain current IDSS VDS=600V, VGS=0V,

Tj=25°C,

Tj=150°C

0.1

100

µA

Gate-source leakage current IGSS VGS=20, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=15.4A,

Tj=25°C

Tj=150°C

0.14

0.34

0.16

Ω

Gate input resistance RGf=1MHz, open Drain - 0.66 -

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2009-12-01Rev. 2.5 Page 3

SPP24N60C3

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=15.4A

- 21.5 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 3000 - pF

Output capacitance Coss - 1000 -

Reverse transfer capacitance Crss - 60 -

Effective output capacitance,2)

energy related

Co(er) VGS=0V,

VDS=0V to 480V

- 141 - pF

Effective output capacitance,3)

time related

Co(tr) - 224 -

Turn-on delay time td(on) VDD=380V, VGS=0/10V,

ID=24.3A, RG=3.3Ω

- 13 - ns

Rise time tr- 21 -

Turn-off delay time td(off) - 140 -

Fall time tf- 14 -

Gate Charge Characteristics

Gate to source charge Qgs VDD=480, ID=24.3A - 12.7 - nC

Gate to drain charge Qgd - 45.8 -

Gate charge total QgVDD=480V, ID=24.3A,

VGS=0 to 10V

- 104.9 135

Gate plateau voltage V(plateau) VDD=480V, ID=24.3A - 5 - V

1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

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2009-12-01Rev. 2.5 Page 4

SPP24N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 24.3 A

Inverse diode direct current,

pulsed

ISM - - 72.9

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=480V, IF=IS ,

diF/dt=100A/µs

- 600 - ns

Reverse recovery charge Qrr - 13 - µC

Peak reverse recovery current Irrm - 70 - A

Peak rate of fall of reverse

recovery current

dirr/dt - 1400 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

Thermal resistance

Rth1 0.006524 K/W

Rth2 0.013

Rth3 0.025

Rth4 0.096

Rth5 0.117

Rth6 0.053

Thermal capacitance

Cth1 0.0004439 Ws/K

Cth2 0.001662

Cth3 0.002268

Cth4 0.006183

Cth5 0.014

Cth6 0.104

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

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2009-12-01Rev. 2.5 Page 5

SPP24N60C3

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

100

120

140

160

180

200

220

260 SPP24N60C3

Ptot

2 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

VDS

-2

-1

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

3 Transient thermal impedance

ZthJC = f(tp)

parameter: D=tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -1

-4

-3

-2

-1

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

4 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 4 8 12 16 20 V 26

VDS

100

Vgs = 20V

Vgs = 7.5V

Vgs = 7V

Vgs = 6.5V

Vgs = 6V

Vgs = 5.5V

Vgs = 5V

Vgs = 4.5V

Vgs = 4V

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2009-12-01Rev. 2.5 Page 6

SPP24N60C3

5 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp= 10 µs, VGS

0 4 8 12 16 20 V 26

VDS

Vgs = 20V

Vgs = 6.5V

Vgs = 6V

Vgs = 5.5V

Vgs = 5V

Vgs = 4.5V

Vgs = 4V

6 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0 5 10 15 20 25 30 35 40 A 50

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Ω

RDS(on)

Vgs = 4V

Vgs = 4.5V

Vgs = 5V

Vgs = 5.5V

Vgs = 6V

Vgs = 6.5V

Vgs = 20V

7 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 15.4 A, VGS = 10 V

-60 -20 20 60 100 °C 180

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Ω

1SPP24N60C3

RDS(on)

typ

98%

8 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 1 2 3 4 5 6 7 8 V 10

VGS

100

Tj = 25°C

Tj = 150°C

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2009-12-01Rev. 2.5 Page 7

SPP24N60C3

9 Typ. gate charge

VGS =f (QGate)

parameter: ID = 24.3 A pulsed

0 20 40 60 80 100 120 140 nC 170

QGate

16 SPP24N60C3

VGS

0.2 VDS max

0.8 VDS max

10 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-1

SPP24N60C3

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

11 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

IAR

Tj(START)=125°C

Tj(START)=25°C

12 Avalanche energy

EAS = f(Tj)

par.: ID = 10 A, VDD = 50 V

25 50 75 100 °C 150

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.9

EAS

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2009-12-01Rev. 2.5 Page 8

SPP24N60C3

13 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

540

560

580

600

620

640

660

680

720

SPP24N60C3

V(BR)DSS

14 Avalanche power losses

PAR = f (f )

parameter: EAR=1mJ

10 310 410 510 6

200

400

600

1000

PAR

15 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 100 200 300 400 V 600

VDS

Ciss

Coss

Crss

16 Typ. Coss stored energy

Eoss=f(VDS)

0 100 200 300 400 V 600

VDS

µJ

Eoss

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2009-12-01Rev. 2.5 Page 9

SPP24N60C3

Definition of diodes switching characteristics

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2009-12-01Rev. 2.5 Page 10

SPP24N60C3

PG-TO-220-3-1

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2009-12-01Rev. 2.5 Page 11

SPP24N60C3

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