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MJD122 — NPN Silicon Darlington Transistor
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. 2.4
March 2016
MJD122
NPN Silicon Darlington Transistor
Features
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications
Electrically Simila r to Popul ar TIP122
Comple m ent to MJD127
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be oper-
able above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
MJD122TF MJD122 TO-252 3L (DPAK) Tape and Reel
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 16 A
IB Base Current 120 mA
PC Collector Dissipation (TC = 25C) 20 W
Collector Dissipation (TA = 25C) 1.75 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 to 150 C
1.Base 2.Collector 3.Emitter
D-PAK
1
Equivalent Circuit
B
E
C
R1 R2
R1 8k
R2 0.12k
MJD122 — NPN Silicon Darlington Transistor
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. 2.4 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 s, duty cycle 2%.
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sus tai ning Voltage(1) IC = 30 mA , IB = 0 100 V
ICEO Collector Cut-off Current VCE = 50 V, IB = 0 10 A
ICBO Collector Cut-off Current VCB = 100 V, IE = 0 10 A
IEBO Emitter Cut-off Current VEB = 5 V, I C = 0 2 mA
hFE DC Current Gain(1) VCE = 4 V, IC = 4 A
VCE = 4 V, IC = 8 A 1000
100 12K
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 4 A, IB = 16 mA
IC = 8 A, IB = 80 mA 2
4 V
V
VBE(sat) Base-Emitter Saturation Voltage(1) IC = 8 A, IB = 80 mA 4.5 V
VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 4 A 2.8 V
Cob Output Capacitance VCB = 10 V, IE = 0
f= 0.1MHz 200 pF
MJD122 — NPN Silicon Darlington Transistor
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. 2.4 3
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Ti me Figure 6. Safe Ope rating Area
0.1 1 10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC = 250 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10
0.01
0.1
1
10
VCC= 30V
IC=250IB
IB1=IB2
tD, VBE(off)=0
tR
tR,tD[s], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tF
tSTG
tSTG,tF[s], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
500
s
5ms
100
s
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
MJD122 — NPN Silicon Darlington Transistor
© 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com
MJD122 Rev. 2.4 4
Typical Performance Characteristics (Continued)
Figure 7. Power Derating Curve
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
0.10 B
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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