Semiconductor Group 1 Nov-28-1996
BDP 951
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP952...BDP956 (PNP)
Type Marking Ordering Code Pin Configuration Package
BDP 951 BDP 951 Q62702-D1339 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 953 BDP 953 Q62702-D1341 1 = B 2 = C 3 = E 4 = C SOT-223
BDP 955 PDP 955 Q62702-D1343 1 = B 2 = C 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
BDP 951
BDP 953
BDP 955
V
CEO
120
100
80 V
Collector-base voltage
BDP 951
BDP 953
BDP 955
V
CBO
140
120
100
Emitter-base voltage
V
EBO 5
DC collector current
I
C 3 A
Peak collector current
I
CM 5
Base current
I
B 200 mA
Peak base current
I
BM 500
Total power dissipation,
T
S = 99°C
P
tot 3 W
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 42 K/W
Junction - soldering point
R
thJS ≤ 17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 2 Nov-28-1996
BDP 951
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 10 mA,
I
B = 0 mA, BDP 951
I
C = 10 mA,
I
B = 0 mA, BDP 953
I
C = 10 mA,
I
B = 0 mA, BDP 955
V
(BR)CEO
120
100
80
-
-
-
-
-
-V
Collector-base breakdown voltage
I
C 100 µA,
I
B = 0 , BDP 951
I
C = 100 µA,
I
B = 0 , BDP 953
I
C = 100 µA,
I
B = 0 , BDP 955
V
(BR)CBO
140
120
100
-
-
-
-
-
-
Base-emitter breakdown voltage
I
E = 10 µA,
I
C = 0
V
(BR)EBO 5 - -
Collector cutoff current
V
CB = 100 V,
I
E = 0 ,
T
A = 25 °C
V
CB = 100 V,
I
E = 0 ,
T
A = 150 °C
I
CBO
-
--
- 20
100 nA
µA
Emitter cutoff current
V
EB = 4 V,
I
C = 0
I
EBO - - 100 nA
DC current gain
I
C = 10 mA,
V
CE = 5 V
I
C = 500 mA,
V
CE = 1 V
I
C = 2 A,
V
CE = 2 V
h
FE
15
40
25
-
-
-
-
475
--
Collector-emitter saturation voltage 1)
I
C = 2 A,
I
B = 0.2 A
V
CEsat - - 0.8 V
Base-emitter saturation voltage 1)
I
C = 2 A,
I
B = 0.2 A
V
BEsat - - 1.5
AC Characteristics
Transition frequency
I
C = 50 mA,
V
CE = 10 V,
f
= 100 MHz
f
T
- 100 - MHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 25 - pF
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 3 Nov-28-1996
BDP 951
Total power dissipation
P
tot =
f
(
T
A*;
T
S)
* Package mounted on epoxy
020 40 60 80 100 120 °C 150
T
A
,T
S
0.0
0.4
0.8
1.2
1.6
2.0
2.4
W
3.2
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax /
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DC current gain
h
FE =
f
(
I
C)
V
CE = 2V
10 0 10 1 10 2 10 3 mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
-50°C
25°C
100°C
Semiconductor Group 4 Nov-28-1996
BDP 951
Collector cutoff current
I
CBO =
f
(
T
A)
V
CB = 45V
020 40 60 80 100 120 °C 150
T
A
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
nA
I
CBO
max
typ
Collector-emitter saturation voltage
I
C = f (
V
CEsat),
h
FE = 10
0.0 0.2 0.4 V 0.8
V
CEsat
0
10
1
10
2
10
3
10
4
10
mA
I
C
100°C
25°C
-50°C
Base-emitter saturation voltage
I
C = f (
V
BEsat),
h
FE = 10
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
V
BEsat
0
10
1
10
2
10
3
10
4
10
mA
I
C
-50°C
25°C
100°C
Collector current
I
C =
f
(
V
BE)
V
CE
=
2V
0.0 0.2 0.4 0.6 0.8 1.0 V 1.3
V
BE
0
10
1
10
2
10
3
10
4
10
mA
I
C
-50°C
25°C
100°C
