© 2008 IXYS CORPORATION, All rights reserved DS99891A(4/08)
VDSS = 1000V
ID25 = 15A
RDS(on)
760mΩΩ
ΩΩ
Ω
trr
300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
zInternational standard packages
zFast recovery diode
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C15A
IDM TC= 25°C, pulse width limited by TJM 40 A
IAR TC= 25°C 7.5 A
EAS TC= 25°C 500 mJ
dV/dt IS IDM, VDD VDSS,T
J 150°C 15 V/ns
PDTC= 25°C 543 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting force (PLUS 220) 11..65/2.5..14.6 N/lb.
Weight TO-247 6 g
PLUS 220 types 4 g
G = Gate D = Drain
S = Source TAB = Drain
IXFH15N100P
IXFV15N100P
IXFV15N100PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 1.0 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 670 760 mΩ
Applications:
zSwitched-mode and resonant-mode
power supplies
zDC-DC Converters
zLaser Drivers
zAC and DC motor controls
zRobotics and servo controls
PolarTM Power MOSFET
HiPerFETTM
G
SD (TAB)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
PLUS220 (IXFV)
GDS
D (TAB)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH15N100P IXFV15N100P
IXFV15N100PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 6.5 10.5 S
Ciss 5140 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 322 pF
Crss 43 pF
RGi Gate input resistance 1.20 Ω
td(on) 41 ns
tr 44 ns
td(off) 44 ns
tf 58 ns
Qg(on) 97 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 38 nC
Qgd 42 nC
RthJC 0.23 °C/W
RthCS (TO-247, PLUS220) 0.21 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 15 A
ISM Repetitive 60 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.6 μC
IRM 7 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
IF = 7.5A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG= 2Ω (External)
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
P
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFH15N100P IXFV15N100P
IXFV15N100PS
Fig. 1. Output Characteristics
@ 25º C
0
2
4
6
8
10
12
14
16
024681012
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
9V
8V
7V
Fig. 2. Extended Output Characteristics
@ 25º C
0
3
6
9
12
15
18
21
24
27
30
0 3 6 9 12 15 18 21 24 27 30
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
7V
8V
9V
Fi g. 3. Ou tp u t C h aracter i stics
@ 125ºC
0
2
4
6
8
10
12
14
16
0 2 4 6 8 101214161820222426
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 10V
9V
6V
7V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 7.5A Value
vs. Jun cti o n Temp er atu r e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N o rm a liz ed
V
GS
= 10V
I
D
= 15A
I
D
= 7.5A
Fig. 5. R
DS(on)
No r mali z ed to I
D
= 7.5A Value
vs. Dr ai n C ur r en t
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 3 6 9 12 15 18 21 24 27 30
I
D
- A mperes
R
DS(on)
- N orm a lize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Current vs.
Case Temp eratu r e
0
2
4
6
8
10
12
14
16
-50-250 255075100125150
T
C
- Deg rees Centigrad e
I
D
- A mpere s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH15N100P IXFV15N100P
IXFV15N100PS
IXYS REF: F_15N100P(76)4-1-08-A
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
5.05.56.06.57.07.58.08.5
V
GS
- Volts
I
D
- A mpe res
TJ
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
024681012141618
I
D
- A mper es
g
f s
- Siem ens
TJ
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Dio de
0
5
10
15
20
25
30
35
40
45
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- V olts
I
S
- A mpe re s
TJ
= 125ºC
TJ = 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 20406080100120140
Q
G
- Nan oCoulom bs
V
GS
- V o lts
VDS
= 500V
I D = 7. 5A
I G = 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximu m Tran si en t Th er ma l
Impedance
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W