MDMA50P1600TG
Phase leg
Standard Rectifier Module
2 1 3
Part number
MDMA50P1600TG
Backside: isolated
FAV
F
V V1.09
RRM
50
1600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
TO-240AA
● Industry standard outline
● RoHS compliant
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MDMA50P1600TG
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.13
R0.65 K/W
R
min.
50
V
RSM
V
50T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
100
P
tot
190 WT = 25°C
C
RK/W
50
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.34
T = 25°C
VJ
150
V
F0
V0.80T = °C
VJ
150
r
F
5.7 mΩ
V1.09T = °C
VJ
I = A
F
V
50
1.37
I = A
F
100
I = A
F
100
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
27
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
850
920
2.63
2.53
A
A
A
A
725
780
3.62
3.52
1600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MDMA50P1600TG
Ratings
Part Number
yywwAA
Lot.No: xxxxxx
Circuit
Date Code +
Assembly Line
Data Matrix
D
M
M
A
50
P
1600
TG
Part description
Diode
Standard Rectifier
(up to 1800V)
Phase leg
TO-240AA
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C150
virtual junction temperature
-40
Weight g76
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
200 A
per terminal
125-40
terminal to terminal
TO-240AA
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MDMA50P1600TG 513022Box 36MDMA50P1600TGStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.8
mΩ
V
0 max
R
0 max
slope resistance *
4.5
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MDMA50P1600TG
2 1 3
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MDMA50P1600TG
0.001 0.01 0.1 1
200
400
600
8
00
2 3 4 5 6 7 8 9 011
10
2
10
3
1
0
4
0.5 1.0 1.5 2.0
0
40
80
120
1
6
0
0 10 20 30 40 50 60
0
20
40
60
80
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 50 100 150
0
30
60
90
120
IF
[A]
VF [V]
IFSM
[A]
t [s]
I2t
[A2s]
t [ms]
Ptot
[W]
IF(AV)M [A] Tamb [°C]
IF(AV)M
[A]
TC[°C]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
t [ms]
0 50 100 150
50 Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
ZthJC
[K/
W]
R
thHA
=
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
Constants for ZthJC calculation:
i Rthi (K/W) ti(s)
1 0.032 0.001
2 0.098 0.010
3 0.305 0.060
4 0.215 0.270
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
