V
RRM
= 300 V - 600 V
I
F
=60 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol 1N2133A(R) 1N2135A(R) Unit
Re
etitive
eak reverse volta
eV
RRM
300 400 V
• Types from 300 V to 600 V V
RRM
2. Reverse polarity (R): Stud is anode.
1N2133A thru 1N2138AR
1N2138A(R)
500
1N2137A(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
Diode
Conditions
600
RMS reverse voltage V
RMS
210 280 V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
60 60 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol 1N2133A(R) 1N2135A(R) Unit
Diode forward voltage 1.1 1.1
10 10 μA
15 15 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.65 0.65 °C/W
15
A1050
Reverse current I
R
V
F
1050
1N2138A(R)
10 10
V
R
= 50 V, T
j
= 25 °C
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
350
1050 1050
-55 to 150
60 60
-55 to 150
0.65
1.1 1.1
15
I
F,SM
1N2137A(R)
0.65
V
R
= 50 V, T
j
= 150 °C
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
420
200150
Surge non-repetitive forward
current, Half Sine Wave
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1