2.70
3.70
0.551.05
1.6
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
B5819WS SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
P
D: 200 mW (Tamb=25℃)
Collector current
I
F: 1 A
Collector-base voltage
V
R: 40 V
Operating and storage junction temperature range
T
J, Tstg: -55℃ to +150℃
MARKING: SL
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) I
R= 1mA 40 V
Reverse voltage leakage current IR VR=40V
VR=4V
VR=6V 1
0.05
0.075 mA
Forward voltage VF IF=0.1A
IF=1A
IF=3A
0.45
0.6
0.9
V
Diode capacitance CD V
R=4V, f= 1MHz 120 pF
SOD-323
+
-
WS
