2.
70
3.
70
0
.
5
5
1
.
0
5
1
.
6
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., L
TD
SOD-323 Plastic-Encap
sulate Diode
B
5
8
1
9
W
S
SCHOTTKY
BARRIER
DIODE
FEA
T
URES
Power
dissip
ation
P
D:
200 mW
(T
amb=25
℃
)
Collector
current
I
F
:
1
A
Collector-base
voltage
V
R
:
4
0
V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
MARKING: SL
ELECTRICAL CHARACTERISTICS
(T
amb=25
℃
unless otherwise specified)
Parameter
Symbol
T
est c
onditions
MIN
MAX
UNIT
Reverse breakdow
n voltage
V
(BR)
I
R
= 1mA
40
V
Reverse voltage leakage current
I
R
V
R
=40V
V
R
=4V
V
R
=6V
1
0.05
0.075
mA
Forward v
oltage
V
F
I
F
=0.1A
I
F
=1A
I
F
=3A
0.45
0.6
0.9
V
Diode capacit
ance
C
D
V
R
=4V
, f=
1MHz
120
pF
SOD-323
+
-
W
S
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