BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBTA55/A56
Document number: BL/SSSTC123 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V(BR)CBO
Collector-base breakdown voltage
MMBTA55
MMBTA56
IC=-100μA,IE=0
-60
-80
V
V(BR)CEO
Collector-emitter breakdown voltage
MMBTA55
MMBTA56
I
C=-1.0mA,IB=0
-60
-80
V
V(BR)EBO Emitter-base breakdown voltage IE=-100μA,IC=0 -4 V
ICBO
collector cut-off current MMBTA55
MMBTA56
IE = 0; VCB = -60V
IE = 0; VCB = -80V - -0.1 μA
ICEO
collector cut-off current MMBTA55
MMBTA56
IB = 0; VCB = -60V
IB= 0; VCB = -80V - -0.1 μA
hFE DC current gain VCE = -1V;IC = -10mA
VCE = -1V;IC = -100mA
100
100
-
-
VCE(sat) collector-emitter saturation voltage IC = -100mA; IB = -10mA - -0.25 V
VBE(sat) base-emitter saturation voltage IC = -100mA; VCE = -1.0V - -1.2 V
fT transition frequency IC = -100mA; VCE = -1V;
f = 100MHz 50 - MHz
PACKAGE OUTLINE
Plastic surface mounted package SOT-23
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm