BYM36B - Vishay Presicion Group

Fast Avalanche Sinterglass Diode

BYM36A, BYM36B, BYM36C, BYM36D, BYM36E

Vishay Semiconductors

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86012

108 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10

MECHANICAL DATA

Case: SOD-64

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 858 mg

FEATURES

• Glass passivated

• Hermetically sealed package

• Very low switching losses

• Low reverse current

• High reverse voltage

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Switched mode power supplies

• High-frequency inverter circuits

949588

PARTS TABLE

PART TYPE DIFFERENTIATION PACKAGE

BYM36A VR = 200 V; IFAV = 3 A SOD-64

BYM36B VR = 400 V; IFAV = 3 A SOD-64

BYM36C VR = 600 V; IFAV = 3 A SOD-64

BYM36D VR = 800 V; IFAV = 2.9 A SOD-64

BYM36E VR = 1000 V; IFAV = 2.9 A SOD-64

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Reverse voltage = repetitive

peak reverse voltage See electrical characteristics

BYM36A VR = VRRM 200 V

BYM36B VR = VRRM 400 V

BYM36C VR = VRRM 600 V

BYM36D VR = VRRM 800 V

BYM36E VR = VRRM 1000 V

Peak forward surge current tp = 10 ms, half sine wave IFSM 65 A

Average forward current

BYM36A IFAV 3A

BYM36B IFAV 3A

BYM36C IFAV 3A

BYM36D IFAV 2.9 A

BYM36E IFAV 2.9 A

Non repetitive reverse

avalanche energy I(BR)R = 1 A, inductive load ER20 mJ

Junction and storage

temperature range Tj = Tstg - 55 to + 175 °C

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W

On PC board with spacing 25 mm RthJA 70 K/W

BYM36A, BYM36B, BYM36C, BYM36D, BYM36E

Fast Avalanche Sinterglass Diode Vishay Semiconductors

Document Number: 86012 For technical questions within your region, please contact one of the following: www.vishay.com

Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 109

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Average Forward Current vs. Ambient Temperature

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Forward voltage

IF = 3 A

BYM36A VF--1.6V

BYM36B VF--1.6V

BYM36C VF--1.6V

BYM36D VF- - 1.78 V

BYM36E VF- - 1.78 V

IF = 3 A, Tj= 175 °C

BYM36A VF- - 1.22 V

BYM36B VF- - 1.22 V

BYM36C VF- - 1.22 V

BYM36D VF- - 1.28 V

BYM36E VF- - 1.28 V

Reverse current VR = VRRM IR--5μA

VR = VRRM, Tj = 150 °C IR- - 100 μA

Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A

BYM36A trr - - 100 ns

BYM36B trr - - 100 ns

BYM36C trr - - 100 ns

BYM36D trr - - 150 ns

BYM36E trr - - 150 ns

Reverse breakdown voltage IR = 100 μA

BYM36A V(BR)R 300 - - V

BYM36B V(BR)R 500 - - V

BYM36C V(BR)R 700 - - V

BYM36D V(BR)R 900 - - V

BYM36E V(BR)R 1100 - - V

100

500

200

300

400

600

0 40 80 120 160 200

Tj - Junction Temperature (°C)

959705

PR - Max. Reverse Power Dissipation (mW)

RthJA = 25 K/W

1000 V

800 V

600 V

400 V

200 V

RthJA = 70 K/W

959706

FAV

- Average Forward Current (A)

0 40 80 120 160 200

Tamb - Ambient Temperature (°C)

VR = VRRM

half sinewave

RthJA = 70 K/W

RthJA = 25 K/W

BYM36A, BYM36B, BYM36C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86012

110 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10

BYM36A, BYM36B, BYM36C, BYM36D, BYM36E

Vishay Semiconductors Fast Avalanche Sinterglass Diode

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

Fig. 4 - Max. Reverse Current vs. Junction Temperature

Fig. 6 - Max. Forward Current vs. Forward Voltage

Fig. 7 - Diode Capacitance vs. Reverse Voltage

Fig. 5 - Max. Forward Current vs. Forward Voltage

959707

FAV

- Average Forward Current (A)

0 40 80 120 160 200

Tamb - Ambient Temperature (°C)

VR = VRRM

half sinewave

RthJA = 70 K/W

RthJA = 25 K/W

BYM36D, BYM36E

0.1

100

1000

0 40 80 120 160 200

Tj - Junction Temperature (°C)

959704

IR - Reverse Current (μA)

VR = VRRM

IF - Forward Current (A)

0.001

0.01

0.1

100

01234

VF - Forward Voltage (V)

959709

Tj = 25 °C

Tj = 175 °C

BYM36D, BYM36E

0.1 1 10 100

VR - Reverse Voltage (V)

16302

CD - Diode Capacitance (pF)

f = 1 MHz

IF - Forward Current (A)

0.001

0.01

0.1

100

01234

VF - Forward Voltage (V)

959708

Tj = 25 °C

Tj = 175 °C

BYM36A, BYM36B, BYM36C

BYM36A, BYM36B, BYM36C, BYM36D, BYM36E

Fast Avalanche Sinterglass Diode Vishay Semiconductors

Document Number: 86012 For technical questions within your region, please contact one of the following: www.vishay.com

Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 111

PACKAGE DIMENSIONS in millimeters (inches): SOD-64

Cathode Identification 4.3 (0.168) max.

1.35 (0.053) max.

4 (0.156) max.

Sintered Glass Case

SOD-64

26(1.014) min. 26 (1.014) min.

Document-No.: 6.563-5006.4-4

Rev. 3 - Date: 09.February.2005

94 9587

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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