www.element14.com
www.farnell.com
www.newark.com
Page <1> V1.025/02/13
Surface Mount
Schottky Barrier Diode
Features:
• Low Forward Voltage Drop
• Fast Switching
• Ultra-Small Surface Mount Package
• PN Junction Guard Ring for Transient and ESD Protection
Applications:
Schottky barrier diode
Max. Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Limits Unit
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC reverse voltage
Vrrm
Vrms
Vr
30 V
Forward continuous voltage If200 mA
Repetitive peak forward voltage Ifrm 300 mA
Non-repetitive peak forward surge current @t<1.0s Ifsm 600 mA
Power dissipation Pd150 mW
Thermal resistance, junction to ambient Rθja 833 °C/W
Junction and storage temperature Tj, Tstg -65 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Conditions Min. Max. Unit
Reverse breakdown voltage V(br)Ir = 100μA 30 - V
Leakage current IrVr = 25V - 2 μA
Forward voltage Vf
If = 0.1mA
If = 1mA
If = 10mA
If = 30mA
If = 100mA
-
240
320
400
500
1,000
mV
Typical total capacitance CtVr = 1V, f = 1MHz - 10 pF
Reverse recovery time trr If = Ir = 10mA
Ir = 1mA Rl = 100Ω - 5 ns