N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 450 Volts VDS
*R
DS(on)= 50Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 450 V
Continuo us Drain Cur rent at Tamb=25°C ID90 mA
Pulsed Drain Current IDM 600 mA
Gate-Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 450 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 1 3 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 10
400 µA
µAVDS=450 V, VGS=0
VDS=405 V, VGS=0V,
T=125°C(2)
On-State Drain Cu rrent(1) ID(on) 150 mA VDS=25 V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 50 ΩVGS=10V,ID=100mA
Forward
Transconductance(1)(2) gfs 100 mS VDS=25V,ID=100mA
Input Capacitance (2) Ciss 70 pF
Common So urce Output
Capacitance (2) Coss 10 pF VDS=25 V , VGS=0V, f=1MHz
Reverse Transfer Cap acitance
(2) Crss 4pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈25V, ID=100mA
Rise Time (2)(3) tr7ns
Turn-Off Delay Time (2)(3) td(off) 16 ns
Fall Time (2)(3) tf10 ns
(
1
E-Line
TO92 Compatible
ZVN0545A
3-357
D
G
S
