1N4448WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.1, 27-Jul-12 1Document Number: 81387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes are also available in other case
styles including the DO-35 case with the type
designation 1N4448, the MiniMELF case with the
type designation LL4448, and the SOT-23 case
with the type designation IMBD4448-V
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature.
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
1N4448WS-V 1N4448WS-V-GS18 or 1N4448WS-V-GS08 A3 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100 V
Average rectified current half wave rectification
with resistive load (1) f 50 Hz IF(AV) 150 mA
Surge forward current t < 1 s and Tj = 25 °C IFSM 350 mA
Power dissipation (1) Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 650 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
1N4448WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.1, 27-Jul-12 2Document Number: 81387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics Fig. 2 - Dynamic Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 5 mA VF620 720 mV
IF = 100 mA VF1000 mV
Leakage curent
VR = 20 V IR25 nA
VR = 75 V IR5μA
VR = 20 V, Tj = 150 °C IR50 μA
Diode capacitance VF = VR = 0 V CD4pF
Reverse recovery time IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100 trr 4ns
Rectification efficiency f = 100 MHz, VRF = 2 V 0.45
17436
60 Ω5 kΩ
2 nF
V
O
V
RF
= 2 V
18105
I
F
(mA)
V
F
(V)
T
j
= 100 °C
T
j
= 25 °C
10- 2
10- 1
102
103
1
10
120
17438
f = 1 kHz
Tj = 25 °C
IF (mA)
Rf (Ω)
10
102
103
104
10-2 10-1 110
2
10
2
5
2
5
2
5
2
5
1N4448WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.1, 27-Jul-12 3Document Number: 81387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature Fig. 4 - Relative Capacitance vs. Reverse Voltage
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
0
50
100
150
200
250
0 50 100 150 200
20324 Tamb - Ambient Temperature (°C)
Ptot - Power Dissipation (mW)
17440 VR (V)
0.7
0.8
0.9
1.0
1.1 f = 1 MHz
Tj = 25 °C
2086410
CD (VR)
CD (0 V)
17441 Tj (°C)
IR (nA)
10
102
103
104
100 200
2
5
2
5
2
5
2
5
V
R
= 20 V
1
0
17442 tP (s)
IFRM (A)
100
1
3
5
10-5 10-4 10-3 1010-1
10-2 25 2 525 25 25 25
2
4
10
3
5
2
4
1
3
5
2
4
0.1
I
IFRM
T
n = tP/T T = 1/fP
t
tP
n = 0
0.1
0.2
0.5
1N4448WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.1, 27-Jul-12 4Document Number: 81387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
Foot print recommendation:
Rev. 5 - Date: 23.Sept.2009
17443
Document no.:S8-V-3910.02-001 (4)
0.6 (0.024)
0.6 (0.024)0.6 (0.024)
1.6 (0.063)
0.10 (0.004)
Cathode bar
0.20 (0.008)
0.40 (0.016)
2.50 (0.098)
1.1 (0.043)
1.5 (0.059)
2.85 (0.112)
1.60 (0.063)
1.95 (0.077)
0.15 (0.006)
0.1 (0.004) max.
1.15 (0.045)
0.8 (0.031)
Created - Date: 24.August.2004
0.40 (0.016)
0.25 (0.010)
0.2 (0.008)
0° to 8°
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Revision: 12-Mar-12 1Document Number: 91000
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