MBR10100CTW
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE –
FORWARD CURRENT – 10 Amperes
FEATURES
•
Metal of silicon rectifier, majority carrier conduction
•
Guard ring for transient protection
•
Low power loss, high efficiency
•
High surge¤t capability, low VF
•
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
•
Case: TO-220AB molded plastic
•
Plastic package has UL flammability classification
94V-0
•
Terminals: Matte Tin, solderable per MIL-STD-202
Method 208
•
Lead Free Finish, RoHS Compliant
•
Polarity: As marked on the body
•
Weight: 0.06 ounces, 2.24 grams
•
Mounting position: Any
•
Max. mounting torque = 0.5 N.m (5.1 Kgf-cm)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
PARAMETER SYMBOL
MBR10100CTW UNIT
Maximum Repetitive Peak Reverse Voltage
@IR=100uA
V
RRM
100 V
Maximum RMS Voltage @IR=100uA
V
RMS
71 V
Maximum DC Blocking Voltage @IR=100uA
V
DC
100 V
Average Rectified Output Current @Tc=105°C I
F
10 A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load I
FSM
150 A
Maximum Forward Voltage
Note(1)
IF=5A@
IF=5A@
IF=10A@
IF=10A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
F
0.85
0.75
0.95
0.85
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C IR 10
15
uA
mA
Typical thermal resistance Junction to Case (Note 3) R
Θ
JA
10 °C/W
Typical thermal resistance Junction to Case (Note 3) R
Θ
JL
4.0 °C/W
Typical thermal resistance Junction to Case (Note 3) R
Θ
JC
5.0 °C/W
Typical junction Capacitance per element (Note 2) Cj 120 pF
Operating junction temperature range T
J
-55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
Note : REV. 1, Feb-2012, KTHC98
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 V
DC
.
(3) Thermal Resistance Junction to Case, device mounted on 50mm X 50mm X 2mm copper plate.