DS99193A(10/04)
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low VCE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
IXSA 10N60B2D1
IXSP 10N60B2D1
High Speed IGBT
with Diode
Short Circuit SOA Capability
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC= 25°C20A
IC110 TC= 110°C10A
IF(110) 11 A
ICM TC= 25°C, 1 ms 30 A
SSOA VGE = 15 V, TJ = 125°C, RG = 82Ω ICM = 20 A
(RBSOA) Clamped inductive load, VGE = 20 V @ 0.8 VCES
tSC VGE = 15 V, VCE = 360 V, TJ = 125°C 10µs
(SCSOA) RG = 150 Ω, non repetitive
PCTC= 25°C 100 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Plastic Body t = 10s 250 °C
MdMounting torque (TO-220) 1.3/10 Nm/lb. in
Weight 2 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC= 750 µA, VCE = VGE 4.0 7.0 V
ICES VCE = VCES 75 µA
VGE = 0 V 200 µA
IGES VCE = 0 V, VGE = ± 20 V ± 100 nA
VCE(sat) IC= 10A, VGE = 15 V 2.5 V
Preliminary Data Sheet
VCES = 600 V
IC25 = 20 A
VCE(sat) = 2.5 V
G = Gate C = Collector
E = Emitter TAB = Collector
GCE
TO-220AB (IXSP)
D1
© 2004 IXYS All rights reserved
C (TAB)
C (TAB)
GE
TO-263 (IXSA)
IXSA 10N60B2D1
IXSP 10N60B2D1
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VF IF = 10A, VGE = 0 V TJ =150°C 1.66 V
2.66 V
IRM IF = 12A, VGE = 0 V, -diF/dt = 100 A/µs TJ = 100°C 1.5 A
trr VR = 100 V TJ = 100°C90 ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 25 ns
RthJC 2.5 K/W
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC = 10A; VCE = 10 V, Note 1 2.0 3.6 S
Cies 400 pF
Coes VCE = 25 V, VGE = 0 V 50 pF
Cres f = 1 MHz 11 pF
Qg17 nC
Qge IC = 10A, VGE = 15 V, VCE = 0.5 VCES 6nC
Qgc 7.5 nC
td(on) 30 ns
tri 30 ns
td(off) 180 ns
tfi 165 ns
Eoff 430 750 µJ
td(on) 30 ns
tri 30 ns
Eon 0.32 mJ
td(off) 260 ns
tfi 270 ns
Eoff 790 µJ
RthJC 1.25 K/W
RthCS TO-220 0.25 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 10A, VGE = 15 V
VCE = 0.8 VCES, RG = 30 Ω
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°
°°
°C
IC = 10 A, VGE = 15 V
VCE = 0.8 VCES, RG = 30 Ω
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
TO-220 AB (IXSP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
IXYS reserves the right to change limits, test conditions, and dimensions.
TO-263 (IXSA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
5
10
15
20
25
30
35
012345678910
V
C E
- Volts
I
C
- Amperes
V
GE
= 17V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125
º
C
0
2
4
6
8
10
12
14
16
18
20
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amperes
V
GE
= 17V
9V
7V
11V
13V
15V
Fig. 1. Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
20
0.511.522.533.544.5
V
C E
- Volts
I
C
- Amperes
V
GE
= 17V
9V
11V
13V
15V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalize
d
I
C
= 10A
I
C
= 5A
V
GE
= 15V
I
C
= 20A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Emitter voltage
1
2
3
4
5
6
7
10 11 12 13 14 15 16 17 18 19
V
G E
- Volts
V
C E
- Volts
T
J
= 25
º
C
I
C
= 20A
10A
5A
Fig. 6. Input Adm ittance
0
2
4
6
8
10
12
14
16
18
6 7 8 9 10 11 12 13 14
V
G E
- Volts
I
C
- Amperes
T
J
= 125
º
C
25
º
C
-40
º
C
IXSA 10N60B2D1
IXSP 10N60B2D1
IXSA 10N60B2D1
IXSP 10N60B2D1
Fig. 7. Transconductance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 2 4 6 8 101214161820
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 50 100 150 200 250 300 350 400 450 500
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 5A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 480V I
C
= 10A
I
C
= 20A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
4 6 8 10 12 14 16 18 20
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 30Ω
V
GE
= 15V
V
CE
= 480V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 20A
R
G
= 30Ω
V
GE
= 15V
V
CE
= 480V
I
C
= 10A
I
C
= 5A
Fig. 11. Dependence of Turn-off
Sw itching Tim e on R
G
150
200
250
300
350
400
450
500
550
600
650
700
0 50 100 150 200 250 300 350 400 450 500 550
R
G
- Ohms
Switching Time - nanoseconds
I
C
= 5A
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 480V
I
C
= 10A I
C
= 20A
I
C
= 5
A
Fig. 12. Dependence of Turn-off
Sw itching Tim e
on I
C
120
140
160
180
200
220
240
260
280
300
320
340
4 6 8 10 1214161820
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
= 30Ω
V
GE
= 15V
V
CE
= 480V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 14. Gate Charge
0
2
4
6
8
10
12
14
16
024681012141618
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 300V
I
C
= 10A
I
G
= 10mA
Fig. 15. Capacitance
1
10
100
1000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Sw itching Time on Temperature
120
140
160
180
200
220
240
260
280
300
320
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
= 30Ω
V
GE
= 15V
V
CE
= 480V
I
C
= 5A
20A
I
C
= 10A
I
C
= 20A
5A
Fig. 16. Reverse-Bias Safe
Ope rating Are a
0
2
4
6
8
10
12
14
16
18
20
22
100 150 200 250 300 350 400 450 500 550 600
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 82Ω
dV/dT < 10V/ns
Fig. 17. Maxim um Transient Therm al Resistance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
( ºC / W )
IXSA 10N60B2D1
IXSP 10N60B2D1
IXSA 10N60B2D1
IXSP 10N60B2D1
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 B1 6,534,343 6,683,344
one or moreof the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 B1 6,404,065 B1 6,583,505 6,710,405B2
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 20. Peak reverse current IRM
versus -diF/dt
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
Fig. 18. Forward current IF versus VF
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
Fig. 22. Recovery time trr versus -diF/dt Fig. 23. Peak forward voltage VFR and
tfr versus diF/dt
Fig. 24. Transient thermal resistance junction-to-case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 1.449 0.0052
2 0.5578 0.0003
3 0.4931 0.0169
NOTE: Fig. 19 to Fig. 23 shows typical values
200 600 10000400800
40
60
80
100
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
04080120160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
20
40
60
0.0
0.1
0.2
0.3
VFR
diF/dt
V
200 600 10000400800
0
2
4
6
8
10
100 1000
0
50
100
150
200
250
0123
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns
tfr
ZthJC
A/µs
µs
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
IRM
Qr
VFR
TVJ = 100°C
VR = 300 V
TVJ = 100°C
VR = 300 V
TVJ = 100°C
VR = 300 V
DSEP 8-06B
tfr
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TVJ = 100°C
IF = 10 A
