NGD8201ANT4G - ON Semiconductor

February, 2012 − Rev. 10

1Publication Order Number:

NGD8201N/D

NGD8201N, NGD8201AN

Ignition IGBT

20 A, 400 V, N−Channel DPAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

•Ideal for Coil−on−Plug and Driver−on−Coil Applications

•DPAK Package Offers Smaller Footprint for Increased Board Space

•Gate−Emitter ESD Protection

•Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

•Integrated ESD Diode Protection

•Low Threshold Voltage for Interfacing Power Loads to Logic or

Microprocessor Devices

•Low Saturation Voltage

•High Pulsed Current Capability

•These are Pb−Free Devices

Applications

•Ignition Systems

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage VCES 440 V

Collector−Gate Voltage VCER 440 V

Gate−Emitter Voltage VGE "15 V

Collector Current−Continuous

@ TC = 25°C − Pulsed

IC20

ADC

AAC

Continuous Gate Current IG1.0 mA

Transient Gate Current

(t ≤ 2 ms, f ≤ 100 Hz)

IG20 mA

ESD (Charged−Device Model) ESD 2.0 kV

ESD (Human Body Model)

R = 1500 W, C = 100 pF

ESD

8.0 kV

ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD125

0.83

W/°C

Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

20 A, 400 V

VCE(on) = 1.3 V @

IC = 10 A, VGE . 4.5 V

GRG

DPAK

CASE 369C

STYLE 7

Device Package Shipping†

ORDERING INFORMATION

NGD8201NT4G DPAK

(Pb−Free)

2500 / Tape & Reel

MARKING DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Y = Year

WW = Work Week

NGD8201x = Device Code

x = N or A

G = Pb−Free Package

YWW

NGD

8201xG

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RGE

NGD8201ANT4G DPAK

(Pb−Free)

2500 / Tape & Reel

NGD8201N, NGD8201AN

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UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic Symbol Value Unit

Single Pulse Collector−to−Emitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C

VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C

VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C

EAS 250

200

180

Reverse Avalanche Energy

VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C

EAS(R) 2000

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case RqJC 1.2 °C/W

Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 95 °C/W

Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) TL275 °C

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Test Conditions Temperature Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 175°C 370 395 420 V

IC = 10 mA TJ = −40°C to 175°C 390 415 440

Zero Gate Voltage Collector Current ICES VGE = 0 V, VCE = 15 V TJ = 25°C 0.1 1.0 mA

VCE = 200 V,

VGE = 0 V

TJ = 25°C 0.5 1.5 10 mA

TJ = 175°C 1.0 25 100*

TJ = −40°C 0.4 0.8 5.0

Reverse Collector−Emitter Clamp

Voltage

BVCES(R)

IC = −75 mA

TJ = 25°C 30 35 39 V

TJ = 175°C 35 39 45*

TJ = −40°C 30 33 37

Reverse Collector−Emitter Leakage

Current

ICES(R)

VCE = −24 V −

NGD8201N

VCE = −24 V −

NGD8201AN

TJ = 25°C 0.05 0.1 1.0 mA

TJ = 175°C 1.0 5.0 10

TJ = −40°C 0.005 0.01 0.1

TJ = 25°C 0.05 0.2 1.0

TJ = 175°C 1.0 8.5 25

TJ = −40°C 0.005 0.025 0.2

Gate−Emitter Clamp Voltage BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V

Gate−Emitter Leakage Current IGES VGE = "5.0 V TJ = −40°C to 175°C 200 300 350* mA

Gate Resistor RGTJ = −40°C to 175°C 70 W

Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage VGE(th)

IC = 1.0 mA, VGE = VCE

TJ = 25°C 1.5 1.8 2.1 V

TJ = 175°C 0.7 1.0 1.3

TJ = −40°C 1.7 2.0 2.3*

Threshold Temperature Coefficient

(Negative)

4.0 4.6 5.2 mV/°C

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

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ELECTRICAL CHARACTERISTICS

Characteristic Symbol Test Conditions Temperature Min Typ Max Unit

ON CHARACTERISTICS (Note 4)

Collector−to−Emitter On−Voltage VCE(on)

IC = 6.5 A, VGE = 3.7 V −

NGD8201N

IC = 6.5 A, VGE = 3.7 V −

NGD8201AN

TJ = 25°C 0.95 1.15 1.35 V

TJ = 175°C 0.7 0.95 1.15

TJ = −40°C 1.0 1.3 1.4

TJ = 25°C 0.85 1.03 1.35

TJ = 175°C 0.7 0.9 1.15

TJ = −40°C 0.9 1.11 1.4

IC = 9.0 A, VGE = 3.9 V −

NGD8201N

IC = 9.0 A, VGE = 3.9 V −

NGD8201AN

TJ = 25°C 0.95 1.25 1.45

TJ = 175°C 0.8 1.05 1.25

TJ = −40°C 1.1 1.4 1.5

TJ = 25°C 0.9 1.11 1.45

TJ = 175°C 0.8 1.01 1.25

TJ = −40°C 1.0 1.18 1.5

IC = 7.5 A, VGE = 4.5 V

TJ = 25°C 0.85 1.15 1.4

TJ = 175°C 0.7 0.95 1.2

TJ = −40°C 1.0 1.3 1.6*

IC = 10 A, VGE = 4.5 V

TJ = 25°C 1.0 1.3 1.6

TJ = 175°C 0.8 1.05 1.4

TJ = −40°C 1.1 1.4 1.7*

IC = 15 A, VGE = 4.5 V

TJ = 25°C 1.15 1.45 1.7

TJ = 175°C 1.0 1.3 1.55

TJ = −40°C 1.25 1.55 1.8*

IC = 20 A, VGE = 4.5 V −

NGD8201N

IC = 20 A, VGE = 4.5 V −

NGD8201AN

TJ = 25°C 1.3 1.6 1.9

TJ = 175°C 1.2 1.5 1.8

TJ = −40°C 1.4 1.75 2.0

TJ = 25°C 1.1 1.4 1.9

TJ = 175°C 1.2 1.5 1.8

TJ = −40°C 1.3 1.42 2.0

Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 18 25 Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance CISS

f = 10 kHz, VCE = 25 V TJ = 25°C

1100 1300 1500 pF

Output Capacitance COSS 70 80 90

Transfer Capacitance CRSS 18 20 22

NGD8201N, NGD8201AN

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ELECTRICAL CHARACTERISTICS

Characteristic UnitMaxTypMinTemperatureTest ConditionsSymbol

SWITCHING CHARACTERISTICS

Turn−Off Delay Time (Resistive) td(off)

VCC = 300 V, IC = 9.0 A

RG = 1.0 kW, RL = 33 W,

VGE = 5.0 V

TJ = 25°C 6.0 8.0 10 mSec

TJ = 175°C 6.0 8.0 10

Fall Time (Resistive) tfTJ = 25°C 4.0 6.0 8.0

TJ = 175°C 8.0 10.5 14

Turn−Off Delay Time (Inductive) td(off)

VCC = 300 V, IC = 9.0 A

RG = 1.0 kW,

L = 300 mH, VGE = 5.0 V

TJ = 25°C 3.0 5.0 7.0

TJ = 175°C 5.0 7.0 9.0

Fall Time (Inductive) tfTJ = 25°C 1.5 3.0 4.5

TJ = 175°C 5.0 7.0 10

Turn−On Delay Time td(on)

VCC = 14 V, IC = 9.0 A

RG = 1.0 kW, RL = 1.5 W,

VGE = 5.0 V

TJ = 25°C 1.0 1.5 2.0

TJ = 175°C 1.0 1.5 2.0

Rise Time trTJ = 25°C 4.0 6.0 8.0

TJ = 175°C 3.0 5.0 7.0

*Maximum Value of Characteristic across Temperature Range.

4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

NGD8201N, NGD8201AN

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current

vs. Temperature

Figure 3. Collector−to−Emitter Voltage vs.

Junction Temperature

Figure 4. Collector Current vs.

Collector−to−Emitter Voltage

Figure 5. Collector Current vs.

Collector−to−Emitter Voltage

Figure 6. Collector Current vs.

Collector−to−Emitter Voltage

INDUCTOR (mH)

250

068

100

200

400

150

TJ = 25°C

SCIS ENERGY (mJ)

TJ, JUNCTION TEMPERATURE (°C)

−50 50 75250 100−25 125

175

VCC = 14 V

VGE = 5.0 V

RG = 1000 W

L = 10 mH

150

L = 3.0 mH

L = 1.8 mH

IA, AVALANCHE CURRENT (A)

1.25

TJ, JUNCTION TEMPERATURE (°C)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

−50 50 75250 100−25 125

0.5

1.5

0.25

1.0

0.0

1.75

2.0

0.75

150

VGE = 4.5 V

IC = 25 A

IC = 20 A

IC = 15 A

IC = 10 A

IC = 7.5 A

IC, COLLECTOR CURRENT (A)

81357

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 175°C

VGE = 10 V

5 V

4.5 V

4 V

3.5 V

3 V

2.5 V

IC, COLLECTOR CURRENT (A)

81357

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = −40°C

VGE = 10 V

5 V

4.5 V

4 V

3.5 V

3 V

2.5 V

IC, COLLECTOR CURRENT (A)

81357

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25°C

VGE = 10 V

5 V

4.5 V

4 V

3.5 V

3 V

2.5 V

064

VCC = 14 V

VGE = 5.0 V

RG = 1000 W

350

300

TJ = 175°C

175

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TYPICAL ELECTRICAL CHARACTERISTICS

TJ, JUNCTION TEMPERATURE (°C)

GATE THRESHOLD VOLTAGE (V)

−50 75 100250 125−25 175

Mean + 4 s

Mean − 4 s

Mean

VGE, GATE TO EMITTER VOLTAGE (V)

1.50

0.25

2.50

0.75

1.25

2.00

10000

1000

100

0.1

Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage

Current vs. Temperature

Figure 9. Gate Threshold Voltage vs.

Temperature

Figure 10. Capacitance vs.

Collector−to−Emitter Voltage

Figure 11. Resistive Switching Fall Time vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Inductive Switching Fall Time vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C)

COLLECTOR TO EMITTER LEAKAGE

CURRENT (mA)

SWITCHING TIME (ms)

05025−25 125 175

TJ = 175°C

75 100 150

50 7525 100 175150

tfall

VCC = 300 V

VGE = 5.0 V

RG = 1000 W

IC = 9.0 A

L = 300 mH

VCE = 200 V

1.5 3 3.52.5 420.5

VCE = 5 V

IC, COLLECTOR CURRENT (A)

1.0

50 150

0.50

1.00

1.75

2.25

125

tdelay

10000

1000

100

0.1

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C, CAPACITANCE (pF)

01552510 20

Crss

Ciss

Coss

1.0

TJ, JUNCTION TEMPERATURE (°C)

SWITCHING TIME (ms)

7550 100 175150

tfall

VCC = 300 V

VGE = 5.0 V

RG = 1000 W

IC = 9.0 A

RL = 33 W

25 125

tdelay

TJ = −40°C

TJ = 25°C

−50

VCE = −24 V

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0.000001 0.0010.0001 0.1

100

0.01

t,TIME (S)

R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

110100 1000

0.1

Figure 13. Minimum Pad Transient Thermal Resistance

(Non−normalized Junction−to−Ambient)

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

0.000001 0.0010.0001 0.1

0.01

t,TIME (S)

RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

110

0.1

Figure 14. Best Case Transient Thermal Resistance

(Non−normalized Junction−to−Case Mounted on Cold Plate)

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

P(pk)

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJA(t)

For D=1: RqJC X R(t) for t ≤ 0.1 s

P(pk)

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJC(t)

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PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE D

STYLE 7:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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NGD8201N/D

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