ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
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March 2015
© Diodes Incorporated
ZXMN6A11G
A Product Line of
Diodes Incorporated
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(on)
ID
TA = +25°C
120mΩ @ VGS= 10V
4.4A
180mΩ @ VGS= 4.5V
3.5A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Uninterrupted Power Supply
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMN6A11GTA
See below
7
12
1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
S
G
Equivalent Circuit
Pin Out - Top
View
Top View
SOT223
Green
ZXMN6A11 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
SOT223
4310
YWW
ZVN
6A11
ZXMN
ZXMN
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
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March 2015
© Diodes Incorporated
ZXMN6A11G
A Product Line of
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Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current
VGS = 10V
(Note 6)
TA = +70°C (Note 6)
(Note 5)
ID
4.4
3.5
3.1
A
Pulsed Drain Current
VGS = 10V
(Note 7)
IDM
15.6
Continuous Source Current (Body Diode)
(Note 6)
IS
5
Pulsed Source Current (Body Diode)
(Note 7)
ISM
15.6
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
2.0
16
W
mW/°C
(Note 6)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
62.5
°C/W
(Note 6)
32.0
Thermal Resistance, Junction to Lead
(Note 8)
RθJL
9.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t ≤ 10 seconds.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300μs.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
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March 2015
© Diodes Incorporated
ZXMN6A11G
A Product Line of
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Thermal Characteristics
110
10m
100m
1
10
Tamb=25°C
25mm x 25mm
1oz FR4
Tamb=25°C
25mm x 25mm
1oz FR4
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
ID Drain Current (A)
VDS Drain-Source Voltage (V) 020 40 60 80 100 120 140 160
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100
25mm x 25mm
1oz FR4
25mm x 25mm
1oz FR4
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
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March 2015
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ZXMN6A11G
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Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
60
V
ID = 250A, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
1.0
3.0
V
ID = 250A, VDS = VGS
Static Drain-Source On-Resistance (Note 6)
RDS (ON)
0.105
0.120
Ω
VGS = 10V, ID = 2.5A
0.150
0.180
VGS = 4.5V, ID = 2A
Forward Transconductance (Notes 6 & 7)
gfs
4.9
S
VDS = 15V, ID = 2.5A
Diode Forward Voltage (Note 6)
VSD
0.85
0.95
V
IS = 2.8A, VGS = 0V, TJ = +25°C
Reverse Recovery Time (Note 7)
trr
21.5
ns
IS = 2.8A, di/dt = 100A/µs
TJ = +25°C
Reverse Recovery Charge (Note 7)
Qrr
20.5
nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
330
pF
VDS = 40V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
35.2
Reverse Transfer Capacitance
Crss
17.1
Gate Charge (Note 8)
Qg
3.0
nC
VGS = 4.5V
VDS = 15V
ID = 2.5A
Total Gate Charge (Note 8)
Qg
5.7
VGS = 10V
Gate-Source Charge (Note 8)
Qgs
1.25
Gate-Drain Charge (Note 8)
Qgd
0.86
Turn-On Delay Time (Note 8)
tD(on)
1.95
ns
VDD = 30V, ID = 2.5A,
RG = 6, VGS = 10V
Turn-On Rise Time (Note 8)
tr
3.5
Turn-Off Delay Time (Note 8)
tD(off)
8.2
Turn-Off Fall Time (Note 8)
tf
4.6
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
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© Diodes Incorporated
ZXMN6A11G
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Typical Characteristics
0.1 1 10
0.1
1
10
0.1 1 10
0.1
1
10
2 3 4 5
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
110
0.1
1
0.4 0.6 0.8 1.0 1.2
0.1
1
10
4V
10V 5V
3.5V
2.5V
Output Characteristics
T = 25°C
3V
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
2V
2.5V
4V
10V 5V
3V
Output Characteristics
T = 150°C
VGS
3.5V
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Drain Current (A)
VGS Gate-Source Voltage (V) Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID = 2.5A
VGS(th)
VGS = VDS
ID = 250uA
Normalised R
DS(on)
and VGS(th)
Tj Junction Temperature (°C)
4.5V
4V
5V
3.5V
On-Resistance v Drain Current
T = 25°C
3V
10V
VGS
RDS(on)
Drain-Source On-Resistance
()
ID Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
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March 2015
© Diodes Incorporated
ZXMN6A11G
A Product Line of
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Typical Characteristics (cont.)
110
0
100
200
300
400
500
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
VDS - Drain - Source Voltage (V) 0 1 2 3 4 5 6
0
2
4
6
8
10 ID = 2.5A
VDS = 30V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage Q - Charge (nC)
VGS Gate-Source Voltage (V)
Test Circuit
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
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March 2015
© Diodes Incorporated
ZXMN6A11G
A Product Line of
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Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
X1
Y1
Y
XC
C1 Y2
ZXMN6A11G
Document number: DS33556 Rev. 6 - 2
8 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN6A11G
A Product Line of
Diodes Incorporated
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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