Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC184L, BC184LB
BC184LC
TO-92
Plastic Package
General Pur
ose Am
lifier Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector -Emitter Voltage VCEO 30 V
Collector -Base Voltage VCBO 45 V
Emitter -Base Voltage VEBO 6.0 V
Collector Current Continuous IC100 mA
Power Dissipation @ Ta=25ºC PD350 mW
Derate Above 25ºC 2.8 mW/ºC
Power Dissipation @ Tc=25ºC PD1.0 W
Derate Above 25ºC 8.0 mW/ºC
Operating And Storage Junction Tj, Tstg -55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 125 ºC/W
Junction to Ambient Rth(j-a) 357 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Collector -Emitter Voltage VCEO IC=2mA,IB=0 30 V
Collector -Base Voltage VCBO IC=10µA.IE=0 45 V
Emitter-Base Voltage VEBO IE=100µA, IC=0 6V
Collector-Cut off Current ICBO VCB=30V,IE=0 0.2 15 nA
Emitter-Cut off Current IEBO VEB=4V, IC=0 15 nA
DC Current Gain hFE IC=10µA,VCE=5V 100
BC184L IC=2mA,VCE=5V 240 800
IC=100mA,VCE=5V 130
IS /I SO 9 0 02
Lic#
SC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 4