Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1700 V TC = 80 C IC,nom. 1600 A TC = 25 C IC 2600 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 3200 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 12,5 kW VGES +/- 20V V IF 1600 A IFRM 3200 A I2 t 660 kA2s VISOL 4 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tp = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, t p = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 1600A, V GE = 15V, Tvj = 25C VCE sat IC = 1600A, V GE = 15V, Tvj = 125C typ. max. 2,6 3,1 V 3,1 3,6 V 5,5 6,5 V Gate-Schwellenspannung gate threshold voltage IC = 130mA, VCE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V ... +15V QG 19 C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies 105 nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cres 5,3 nF VCE = 1700V, V GE = 0V, Tvj = 25C ICES 0,04 3 mA 20 160 mA 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VGE(th) VCE = 1700V, V GE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25C prepared by: Alfons Wiesenthal date of publication: 19.01.2001 approved by: Christoph Lubke; 06.02.2001 revision: 2 (Serie) 1(8) http://store.iiic.cc/ IGES 4,5 FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE = 15V, RG = 0,9, Tvj = 25C td,on VGE = 15V, RG = 0,9, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) VGE = 15V, RG = 0,9, Tvj = 25C tr VGE = 15V, RG = 0,9, Tvj = 25C td,off s s 0,19 s 0,19 s 1,2 s 1,2 s IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C tf 0,15 s 0,16 s Eon 430 mWs Eoff 670 mWs ISC 6400 A LsCE 12 nH RCC+EE 0,08 m VGE = 15V, RG = 0,9, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 1600A, V CE = 900V, V GE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 1600A, V CE = 900V, V GE = 15V Kurzschluverhalten SC Data 0,3 0,3 IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) max. IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) typ. IC = 1600A, V CE = 900V RG = 0,9, Tvj = 125C, LS = 50nH RG = 0,9, Tvj = 125C, LS = 50nH tP 10sec, V GE 15V TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip Charakteristische Werte / Characteristic values min. Diode / Diode Durchlaspannung forward voltage IF = 1600A, V GE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 1600A, - diF/dt = 9600A/sec VF IF = 1600A, V GE = 0V, Tvj = 125C VR = 900V, VGE = -10V, T vj = 25C IRM VR = 900V, VGE = -10V, T vj = 125C Sperrverzogerungsladung recovered charge max. 2,1 2,5 V 2,1 2,5 V 1400 A 1700 A 300 As 560 As 210 mWs 380 mWs IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C Qr VR = 900V, VGE = -10V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy typ. IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C 2(8) http://store.iiic.cc/ Erec FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K typ. RthJC Diode/Diode, DC RthCK Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj Betriebstemperatur operation temperature Top Lagertemperatur storage temperature Tstg max. 0,01 K/W 0,017 K/W 0,008 K/W 150 C -40 125 C -40 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 17 mm Luftstrecke clearance 10 mm CTI comperative tracking index min. 275 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque terminals M4 Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque M2 terminals M8 Gewicht weight G 1050 5 Nm 2 Nm 8 - 10 Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) http://store.iiic.cc/ FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 3500 3000 IC [A] 2500 2000 1500 Tj = 25C Tj = 125C 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125C 3500 VGE = 20V 3000 VGE = 15V VGE = 12V VGE = 10V 2500 VGE = 9V IC [A] VGE = 8V 2000 1500 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] 4(8) http://store.iiic.cc/ FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 3500 3000 Tj = 25C Tj = 125C IC [A] 2500 2000 1500 1000 500 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 3500 Tvj = 25C 3000 Tvj = 125C IF [A] 2500 2000 1500 1000 500 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) http://store.iiic.cc/ FZ1600R17KF6C B2.xls Technische Information / Technical Information FZ1600R17KF6C B2 IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) Rgon = Rgoff =0,9 , VCE = 900V, Tj = 125C, VGE = 15V 1800 Eoff 1600 Eon Erec 1400 E [mJ] 1200 1000 800 600 400 200 0 0 500 1000 1500 2000 2500 3000 3500 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 1600A , VCE = 900V , Tj = 125C, VGE = 15V 2500 Eon Eoff E [mJ] 2000 Erec 1500 1000 500 0 0 1 2 3 4 5 6 7 RG [ ] 6(8) http://store.iiic.cc/ FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 0,1 ZthJC [K / W] 0,01 0,001 Zth:Diode Zth:IGBT 0,0001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 0,94 4,72 1,425 2,92 0,027 0,052 0,09 0,838 7,85 3,53 1,12 4,52 0,0287 0,0705 0,153 0,988 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) Rg = 0,9 Ohm, T vj= 125C 3500 3000 2500 IC [A] IC,Modul IC,Chip 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 1600 1800 VCE [V] 7 (8) http://store.iiic.cc/ FZ1600R17KF6C B2.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ1600R17KF6C B2 Auere Abmessungen / external dimensions 8(8) http://store.iiic.cc/ FZ1600R17KF6C B2.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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