FZ1600R17KF6C - Infineon Technologies [EUPEC]

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ1600R17KF6C B2

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage VCES 1700 V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 1600 A

DC-collector current TC = 25 °C IC 2600 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 3200 A

Gesamt-Verlustleistung

total power dissipation TC=25°C, Transistor Ptot 12,5 kW

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF 1600 A

Periodischer Spitzenstrom

repetitive peak forw. current tp = 1 ms IFRM 3200 A

Grenzlastintegral der Diode

I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t 660 kA2s

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 4 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Kollektor-Emitter Sättigungsspannung IC = 1600A, VGE = 15V, Tvj = 25°C VCE sat 2,6 3,1 V

collector-emitter saturation voltage IC = 1600A, VGE = 15V, Tvj = 125°C 3,1 3,6 V

Gate-Schwellenspannung

gate threshold voltage IC = 130mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V

Gateladung

gate charge VGE = -15V ... +15V QG 19 µC

Eingangskapazität

input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies 105 nF

Rückwirkungskapazität

reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres 5,3 nF

Kollektor-Emitter Reststrom VCE = 1700V, VGE = 0V, Tvj = 25°C ICES 0,04 3 mA

collector-emitter cut-off current VCE = 1700V, VGE = 0V, Tvj = 125°C 20 160 mA

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES 400 nA

prepared by: Alfons Wiesenthal date of publication: 19.01.2001

approved by: Christoph Lübke; 06.02.2001 revision: 2 (Serie)

1(8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Einschaltverzögerungszeit (ind. Last) IC = 1600A, VCE = 900V

turn on delay time (inductive load) VGE = ±15V, RG = 0,9Ω, Tvj = 25°C td,on 0,3 µs

VGE = ±15V, RG = 0,9Ω, Tvj = 125°C 0,3 µs

Anstiegszeit (induktive Last) IC = 1600A, VCE = 900V

rise time (inductive load) VGE = ±15V, RG = 0,9Ω, Tvj = 25°C tr 0,19 µs

VGE = ±15V, RG = 0,9Ω, Tvj = 125°C 0,19 µs

Abschaltverzögerungszeit (ind. Last) IC = 1600A, VCE = 900V

turn off delay time (inductive load) VGE = ±15V, RG = 0,9Ω, Tvj = 25°C td,off 1,2 µs

VGE = ±15V, RG = 0,9Ω, Tvj = 125°C 1,2 µs

Fallzeit (induktive Last) IC = 1600A, VCE = 900V

fall time (inductive load) VGE = ±15V, RG = 0,9Ω, Tvj = 25°C tf 0,15 µs

VGE = ±15V, RG = 0,9Ω, Tvj = 125°C 0,16 µs

Einschaltverlustenergie pro Puls IC = 1600A, VCE = 900V, VGE = 15V

turn-on energy loss per pulse RG = 0,9Ω, Tvj = 125°C, LS = 50nH Eon 430 mWs

Abschaltverlustenergie pro Puls IC = 1600A, VCE = 900V, VGE = 15V

turn-off energy loss per pulse RG = 0,9Ω, Tvj = 125°C, LS = 50nH Eoff 670 mWs

Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V

SC Data TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt ISC 6400 A

Modulinduktivität

stray inductance module LsCE 12 nH

Modulleitungswiderstand, Anschlüsse - Chip

module lead resistance, terminals - chip RCC´+EE´ 0,08 mΩ

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.

Durchlaßspannung IF = 1600A, VGE = 0V, Tvj = 25°C VF 2,1 2,5 V

forward voltage IF = 1600A, VGE = 0V, Tvj = 125°C 2,1 2,5 V

Rückstromspitze IF = 1600A, - diF/dt = 9600A/µsec

peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM 1400 A

VR = 900V, VGE = -10V, Tvj = 125°C 1700 A

Sperrverzögerungsladung IF = 1600A, - diF/dt = 9600A/µsec

recovered charge VR = 900V, VGE = -10V, Tvj = 25°C Qr 300 µAs

VR = 900V, VGE = -10V, Tvj = 125°C 560 µAs

Abschaltenergie pro Puls IF = 1600A, - diF/dt = 9600A/µsec

reverse recovery energy VR = 900V, VGE = -10V, Tvj = 25°C Erec 210 mWs

VR = 900V, VGE = -10V, Tvj = 125°C 380 mWs

FZ1600R17KF6C B2

2(8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ1600R17KF6C B2

Thermische Eigenschaften / Thermal properties min. typ. max.

Innerer Wärmewiderstand Transistor / transistor, DC RthJC 0,01 K/W

thermal resistance, junction to case Diode/Diode, DC 0,017 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink pro Modul / per module

λPaste = 1 W/m*K / λgrease = 1 W/m*K RthCK 0,008 K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj 150 °C

Betriebstemperatur

operation temperature Top -40 125 °C

Lagertemperatur

storage temperature Tstg -40 125 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation AlN

Kriechstrecke

creepage distance 17 mm

Luftstrecke

clearance 10 mm

CTI

comperative tracking index min. 275

Anzugsdrehmoment f. mech. Befestigung M1 5 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse terminals M4 M2 2 Nm

terminal connection torque terminals M8 8 - 10 Nm

Gewicht

weight G 1050 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

3(8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ1600R17KF6C B2

I

C[A]

VCE [V]

I

C[A]

VCE [V]

0

500

1000

1500

2000

2500

3000

3500

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

Tj = 25°C

Tj = 125°C

Ausgangskennlinie (typisch) IC = f (VCE)

Output characteristic (typical) VGE = 15V

0

500

1000

1500

2000

2500

3000

3500

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VGE = 20V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 9V

VGE = 8V

Ausgangskennlinienfeld (typisch) IC = f (VCE)

Output characteristic (typical) Tvj = 125°C

4(8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ1600R17KF6C B2

I

C[A]

VGE [V]

I

F[A]

VF [V]

0

500

1000

1500

2000

2500

3000

3500

5 6 7 8 9 10 11 12 13

Tj = 25°C

Tj = 125°C

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

0

500

1000

1500

2000

2500

3000

3500

0,0 0,5 1,0 1,5 2,0 2,5 3,0

Tvj = 25°C

Tvj = 125°C

Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF)

Forward characteristic of inverse diode (typical)

5(8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ1600R17KF6C B2

E [mJ]

IC [A]

E [mJ]

RG [ΩΩΩ]

0

200

400

600

800

1000

1200

1400

1600

1800

0 500 1000 1500 2000 2500 3000 3500

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) Rgon = Rgoff =0,9ΩΩΩ, VCE = 900V, Tj = 125°C, VGE = ± 15V

0

500

1000

1500

2000

2500

0 1 2 3 4 5 6 7

Eon

Eoff

Erec

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) IC = 1600A , VCE = 900V , Tj = 125°C, VGE = ± 15V

6(8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ1600R17KF6C B2

Z

thJC [K / W]

t [sec]

i 1 2 3 4

ri [K/kW] : IGBT 0,94 4,72 1,425 2,92

τi [sec] : IGBT 0,027 0,052 0,09 0,838

ri [K/kW] : Diode 7,85 3,53 1,12 4,52

τi [sec] : Diode 0,0287 0,0705 0,153 0,988

I

C[A]

VCE [V]

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) Rg = 0,9 Ohm, Tvj= 125°C

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance

0

500

1000

1500

2000

2500

3000

3500

0 200 400 600 800 1000 1200 1400 1600 1800

IC,Modul

IC,Chip

0,0001

0,001

0,01

0,1

0,001 0,01 0,1 1 10 100

Zth:Diode

Zth:IGBT

7 (8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Technische Information / Technical Information

IGBT-Module

IGBT-Modules FZ1600R17KF6C B2

Äußere Abmessungen / external dimensions

8(8) FZ1600R17KF6C B2.xls

http://store.iiic.cc/

Terms & Conditions of Usage

Attention

The present product data is exclusively subscribed to technically experienced

staff. This Data Sheet is describing the specification of the products for which a

warranty is granted exclusively pursuant the terms and conditions of the supply

agreement. There will be no guarantee of any kind for the product and its

specifications. Changes to the Data Sheet are reserved.

You and your technical departments will have to evaluate the suitability of the

product for the intended application and the completeness of the product data

with respect to such application. Should you require product information in

excess of the data given in the Data Sheet, please contact your local Sales Office

via “www.eupec.com / sales & contact”.

Warning

Due to technical requirements the products may contain dangerous substances.

For information on the types in question please contact your local Sales Office via

“www.eupec.com / sales & contact”.

http://store.iiic.cc/