INTEGRATED CIRCUITS DIVISION
www.ixysic.com
2R06
LDA111
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Absolute Maximum Ratings @ 25ºC
Parameter Ratings Units
Breakdown Voltage 30 VP
Reverse Input Voltage 5 V
Input Control Current 100 mA
Peak (10ms) 1 A
Power Dissipation
Input Power Dissipation 1150 mW
Phototransistor 2150
Isolation Voltage, Input to Output 3750 Vrms
Operational Temperature -40 to +85 °C
Storage Temperature -40 to +125 °C
1 Derate linearly 1.33mW / °C
2 Derate linearly 2mW / °C
Electrical Characteristics @ 25ºC
Parameter Conditions Symbol Min Typ Max Units
Output Characteristics
Phototransistor Breakdown Voltage IC = 100µA BVCEO 30 85 - V
Phototransistor Dark Current VCEO = 5V, IF = 0mA ICEO - 50 500 nA
Saturation Voltage IC = 3mA, IF = 1mA VCE(sat) --1V
Current Transfer Ratio IF = 1mA, VCE = 2V CTR 300 8500 30000 %
Output Capacitance 25V, f =1MHz COUT -3-pF
Input Characteristics
Input Control Current IC = 3mA, VCE = 2V IF- 0.07 1 mA
Input Voltage Drop IF = 5mA VF0.9 1.2 1.4 V
Reverse Input Current VR = 5V IR- - 10 µA
Common Characteristics
Capacitance, Input to Output - CI/O -3-pF
Characteristic Symbol Test Condition Typ Units
Turn-On Time ton VCC=5V, IF=1mA, RL=5008s
Turn-Off Time toff 345
Switching Characteristics @ 25ºC
Switching Time Test Circuit VCC
VCE
RL
IF
Pulse Width=5ms
Duty Cycle=1%
IF
10%
90%
ton toff
VCE