DSA30C45HB preliminary Schottky Diode Gen VRRM = 45 V I FAV = 2x 15 A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C45HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a DSA30C45HB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 45 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 45 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 45 V TVJ = 25C 250 A 45 V TVJ = 125C 2.5 mA TVJ = 25C 0.74 V 0.90 V 0.62 V 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 125 C TC = 155C rectangular 0.77 V T VJ = 175 C 15 A TVJ = 175 C 0.42 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 5 V f = 1 MHz TVJ = 25C EAS non-repetitive avalanche energy I AS = 13 A L = 180 H TVJ = 25 C I AR repetitive avalanche current VA = 1.5*VR typ.: f = 10 kHz IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. VR = IF = forward voltage drop min. 9.2 m 1.75 K/W K/W 0.25 TC = 25C 85 340 497 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 15.2 mJ 1.3 A 20131030a DSA30C45HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D S A 30 C 45 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DSA30C45HB Similar Part DSA30C45PB DSA30C45PC Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA30C45HB Package TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Code No. 503927 Voltage class 45 45 T VJ = 175 C Schottky V 0 max threshold voltage 0.42 V R 0 max slope resistance * 6.6 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a DSA30C45HB preliminary Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 C 3x b A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a