BFR92A / BFR92AR / BFR92AW
Document Number 85033
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
1
19150
SOT-23
1
23
Electrostatic sensitive device.
Observe precautions for handling.
SOT-23
SOT-323
1
32
1
23
Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Wide band amplifier up to GHz range.
Mechanical Data
Typ: BFR92A
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR92AR
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR92AW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part Ordering code Marking Remarks Package
BFR92A BFR92AGELB-GS08 +P2 Tape and Reel SOT-23
BFR92AR BFR92ARGELB-GS08 +P5 Tape and Reel SOT-23
BFR92AW BFR92AW-GS08 WP2 Tape and Reel SOT-323
e3
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2
Document Number 85033
Rev. 1.4, 29-Apr-05
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 15 V
Emitter-base voltage VEBO 2V
Collector current IC30 mA
Total power dissipation Tamb ≤ 60 °C Ptot 200 mW
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
Parameter Test condition Symbol Value Unit
Junction ambient 1) RthJA 450 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter cut-off current VCE = 20 V, VBE = 0 ICES 100 μA
Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 2 V, IC = 0 IEBO 10 μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 V
DC forward current transfer ratio VCE = 10 V, IC = 14 mA hFE 65 100 150
Parameter Test condition Symbol Min Typ. Max Unit
Transition frequency VCE = 10 V, IC = 14 mA,
f = 500 MHz
fT6GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.3 pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.15 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.65 pF
Noise figure VCE = 10 V, IC = 2 mA,
ZS = 50 Ω, f = 800 MHz
F1.8dB
Power gain VCE = 10 V, ZS = 50 Ω,
ZL = ZLopt, IC = 14 mA,
f = 800 MHz
Gpe 16 dB
Linear output voltage - two tone
intermodulation test
VCE = 10 V, IC = 14 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2120 mV
Third order intercept point VCE = 10 V, IC = 14 mA,
f = 800 MHz
IP324 dBm
BFR92A / BFR92AR / BFR92AW
Document Number 85033
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
3
Common Emitter S-Parameters
VCE/V IC/mA f/MHz S11 S21 S12 S22
IC/mA f/MHz LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
100 0.902 -17.5 6.38 164.6 0.025 79.9 0.978 -7.6
300 0.761 -50.2 5.51 137.8 0.064 63.1 0.859 -19.3
500 0.577 -76.8 4.48 117.8 0.086 53.7 0.736 -24.2
800 0.399 -105.3 3.28 98.9 0.104 49.7 0.642 -25.3
2 1000 0.339 -121.9 2.79 90.0 0.114 50.3 0.618 -26.0
1200 0.303 -138.1 2.45 82.1 0.124 51.1 0.603 -28.0
1500 0.284 -163.3 2.07 71.4 0.140 53.1 0.577 -31.2
1800 0.272 172.9 1.79 62.5 0.157 55.5 0.560 -33.9
2000 0.278 159.4 1.65 57.3 0.171 56.6 0.558 -36.0
100 0.783 -27.2 12.84 155.8 0.023 76.3 0.934 -12.7
300 0.534 -69.6 9.12 122.8 0.052 61.9 0.711 -25.1
500 0.351 -97.6 6.41 104.8 0.068 59.5 0.580 -25.6
800 0.220 -128.3 4.28 89.8 0.091 61.1 0.518 -22.1
5 5 1000 0.188 -145.2 3.53 82.9 0.107 62.5 0.515 -22.2
1200 0.175 -162.0 3.04 76.5 0.124 62.8 0.510 -24.1
1500 0.189 175.1 2.51 67.8 0.149 63.0 0.494 -27.3
1800 0.200 153.5 2.16 60.2 0.175 62.4 0.483 -30.0
2000 0.214 140.6 1.98 55.8 0.194 61.6 0.481 -32.6
100 0.641 -38.1 19.40 146.3 0.020 73.2 0.869 -17.6
300 0.362 -85.8 11.09 112.0 0.043 65.2 0.597 -26.0
500 0.229 -116.7 7.27 97.3 0.062 66.3 0.496 -22.9
800 0.148 -151.6 4.69 84.9 0.089 68.1 0.465 -18.1
10 1000 0.136 -168.5 3.83 79.0 0.108 68.1 0.473 -18.4
1200 0.133 176.8 3.27 73.4 0.127 67.8 0.473 -20.6
1500 0.160 158.3 2.70 65.7 0.156 66.5 0.461 -24.6
1800 0.183 139.4 2.30 58.9 0.184 64.8 0.452 -27.4
2000 0.198 130.4 2.12 54.8 0.203 63.5 0.450 -30.1
100 0.566 -44.3 22.20 141.5 0.019 72.7 0.832 -19.4
300 0.301 -94.2 11.58 108.1 0.041 67.5 0.560 -25.1
500 0.195 -127.0 7.43 94.6 0.060 69.0 0.475 -20.9
800 0.137 -164.6 4.78 83.2 0.089 70.1 0.456 -16.5
14 1000 0.129 -179.9 3.88 77.6 0.109 69.9 0.466 -17.1
1200 0.132 167.7 3.30 72.3 0.128 69.1 0.469 -19.4
1500 0.162 153.1 2.72 64.9 0.157 67.5 0.456 -23.4
1800 0.183 136.6 2.32 58.1 0.185 65.6 0.448 -26.3
5 2000 0.204 127.4 2.13 54.1 0.205 64.1 0.446 -29.2
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4
Document Number 85033
Rev. 1.4, 29-Apr-05
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
100 0.484 -52.5 24.55 136.0 0.018 72.0 0.788 -20.7
300 0.251 -106.2 11.67 104.3 0.039 69.5 0.531 -22.8
500 0.181 -141.8 7.37 92.1 0.058 71.5 0.466 -18.3
800 0.144 -177.4 4.70 81.3 0.088 72.0 0.456 -14.4
20 1000 0.138 169.3 3.82 76.0 0.108 71.4 0.469 -15.3
1200 0.145 159.1 3.26 70.9 0.127 70.6 0.472 -18.1
1500 0.179 148.3 2.67 63.7 0.157 68.4 0.461 -22.4
1800 0.202 133.7 2.28 57.0 0.185 66.4 0.453 -25.4
2000 0.220 125.9 2.10 52.8 0.205 64.8 0.452 -28.4
100 0.915 -16.2 6.32 165.5 0.020 80.5 0.981 -6.2
300 0.780 -46.7 5.56 139.6 0.054 65.1 0.883 -16.1
500 0.597 -71.2 4.57 119.9 0.073 55.8 0.778 -20.4
800 0.405 -97.6 3.37 101.0 0.089 52.2 0.692 -21.6
2 1000 0.339 -113.1 2.87 92.3 0.098 53.0 0.677 -22.4
1200 0.294 -129.6 2.53 84.2 0.107 54.3 0.663 -24.0
1500 0.261 -155.8 2.13 73.7 0.121 56.8 0.643 -27.0
1800 0.240 179.2 1.84 64.8 0.136 59.2 0.630 -29.6
10 2000 0.243 163.2 1.70 59.8 0.149 61.1 0.630 -31.4
100 0.816 -24.3 12.50 157.4 0.019 77.2 0.947 -10.3
300 0.569 -62.7 9.15 125.3 0.044 63.6 0.761 -20.5
500 0.372 -87.9 6.55 106.9 0.059 60.6 0.647 -21.1
800 0.220 -114.2 4.41 91.6 0.079 62.3 0.592 -18.8
5 1000 0.175 -129.6 3.63 84.6 0.093 63.9 0.590 -19.1
1200 0.153 -145.8 3.13 78.3 0.107 64.8 0.589 -20.8
1500 0.153 -175.7 2.59 69.7 0.129 65.5 0.576 -24.1
1800 0.157 158.0 2.22 62.1 0.152 65.5 0.567 -26.6
2000 0.170 143.4 2.04 57.9 0.168 65.3 0.567 -28.7
100 0.696 -33.7 18.83 148.4 0.017 74.6 0.896 -13.8
300 0.397 -75.7 11.20 114.4 0.038 66.4 0.666 -20.8
500 0.237 -101.2 7.41 99.0 0.054 67.0 0.577 -18.6
800 0.132 -130.2 4.81 86.4 0.078 68.9 0.553 -15.5
10 1000 0.103 -149.3 3.92 80.4 0.094 69.4 0.560 -16.0
1200 0.097 -165.8 3.35 75.0 0.111 69.5 0.561 -18.2
1500 0.116 167.2 2.76 67.5 0.136 69.0 0.551 -21.9
1800 0.133 141.3 2.36 60.4 0.160 67.9 0.545 -24.4
2000 0.148 129.4 2.16 56.4 0.178 66.8 0.549 -27.1
100 0.639 -38.8 21.41 143.8 0.016 73.2 0.866 -15.2
300 0.339 -82.4 11.61 110.2 0.036 67.5 0.636 -19.8
500 0.199 -110.0 7.52 96.3 0.053 69.4 0.562 -16.9
800 0.113 -144.1 4.83 84.4 0.077 70.7 0.549 -14.2
10 14 1000 0.093 160.9 3.93 78.9 0.094 71.1 0.556 -14.9
VCE/V IC/mA f/MHz S11 S21 S12 S22
IC/mA f/MHz LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
BFR92A / BFR92AR / BFR92AW
Document Number 85033
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1200 0.090 179.0 3.36 73.7 0.110 70.5 0.560 -17.3
1500 0.118 158.6 2.76 66.4 0.136 69.8 0.550 -21.0
1800 0.137 137.7 2.35 59.5 0.161 68.4 0.546 -24.0
2000 0.155 125.7 2.16 55.6 0.178 67.4 0.548 -26.5
100 0.576 -45.8 23.38 138.5 0.015 72.0 0.836 -15.8
300 0.286 -91.7 11.55 106.1 0.034 69.0 0.620 -17.7
500 0.177 -123.1 7.34 93.4 0.051 71.3 0.565 -14.7
800 0.113 -161.1 4.69 82.2 0.075 72.4 0.557 -12.6
20 1000 0.101 -177.3 3.81 77.1 0.092 72.4 0.568 -13.8
1200 0.107 168.1 3.24 72.0 0.109 71.9 0.571 -16.4
1500 0.136 152.5 2.67 64.8 0.134 70.9 0.564 -20.4
1800 0.160 133.1 2.27 58.1 0.159 69.5 0.559 -23.5
2000 0.181 124.2 2.09 54.0 0.176 68.4 0.560 -25.9
VCE/V IC/mA f/MHz S11 S21 S12 S22
IC/mA f/MHz LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Transition Frequency vs. Collector Current
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
96 12159
P-Total Power Dissipation ( mW )
tot
T
amb
- Ambient Temperature ( °C)
0
1000
2000
3000
4000
5000
6000
0 5 10 15 20 25 30
I
C
- Collector Current ( mA )
12889
f - Transition Frequency ( MHz )
T
V
CE
= 10V
f = 500 MHz
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
Figure 4. Noise Figure vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
V
CB
- Collector Base Voltage(V)
13585
C - Collector Base Capacitance ( pF )
cb
f=1MHz
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 5 10 15 20 25 30
I
C
- Collector Current ( mA )
12891
F - Noise Figure ( dB )
V
CE
=10V
f = 800 MHz
Z
S
=50
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Document Number 85033
Rev. 1.4, 29-Apr-05
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
VCE = 10 V, IC = 10 mA, Z0 = 50 Ω
S11
S21
S12
S22
Figure 5. Input Reflection Coefficient
Figure 6. Forward Transmission Coefficient
13 526
-j0.2
-j0.5
-j
-j2
-j5
0
j0.2
j0.5
j
j2
j5
0.2 0.5 1 2 5
2.0 GHz
0.8
0.1
0.3
∞
13 528
0°
90°
180°
-90°
816
-150°
-120°-60°
-30°
120°
150°
60°
30°
2.0 GHz
0.5
1.0
0.1 0.3
Figure 7. Reverse Transmission Coefficient
Figure 8.
13 527
0°
90°
180°
-90°
0.08 0.16
-150°
-120°-60°
-30°
120°
150°
60°
30°
2.0 GHz
0.5
1.0
0.1
1.5
13 529
-j0.2
-j0.5
-j
-j2
-j5
0
j0.2
j0.5
j
j2
j5
0.2 0.5 1 2 5
2.0 GHz
0.8 0.1
∞
BFR92A / BFR92AR / BFR92AW
Document Number 85033
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in mm (Inches)
Package Dimensions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
BE
C
9511346
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
EB
C
9511347
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
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8
Document Number 85033
Rev. 1.4, 29-Apr-05
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12236
0.9 (0.035)
0.39 (0.015)
Mounting Pad Layout
0.95 (0.37) 0.95 (0.037)
2.0 (0.079)
1.00 (0.039)
10
0.10 (0.004) 0.10 (0.004)
2.05 (0.080)
2.00 (0.078)
1.25 (0.049)
0.30 (0.012)
1.3 (0.051)
S
O
M
e
t
h
o
d
E
BFR92A / BFR92AR / BFR92AW
Document Number 85033
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
9
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
