Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DAP222M
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50Ω
Reverse recovery time
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Storage temperature 55 to 150
Power dissipation 150
Junction temperature 150
Average rectified forward current (Single) 100
Surge current (t=1us) 4
Reverse voltage (DC) 80
Forward voltage (Single) 300
Parameter Limits
Reverse voltage (repetitive peak) 80
VMD3
0.45
0.4
1.15
0.4
0.8
0.45
0.5
1.3±0.05
0
(4.0±0.1)
4.0±0.07 2.0±0.04 φ1.55±0.05
3.5±0.05
1.75±0.07
8.0±0.1
0.3±0.1
0.6±0.05
0
φ0.5±0.05
2.0±0.05
1.35±0.05
0
5.5±0.20~0.1
ROHM : VMD3
dot (year week factory)
1.2±0.1
0.8±0.1
0.5±0.05
0.13±0.05
0.22±0.05
(3)
1.2±0.1
0.4 0.4
(1) (2)
0.22±0.05
0.32±0.05
0~0.1
1/2 2011.06 - Rev.B