ZXTN25100BFHTA - DIODES INC

ZXTN25100BFH

Document number: DS33703 Rev. 3 - 2

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Diodes Incorporated

ZXTN25100BFH

100V NPN LOW SATURATION TRANSISTOR IN SOT23

Features

 BVCEO > 100V

 BVCEX > 170V Forward Blocking Voltage

 BVECO > 6V Reverse Blocking Voltage

 IC = 3A high Continuous Collector Current

 Low Saturation Voltage, VCE(SAT) < 80mV @1A

 RCE(SAT) = 67mΩ for a Low Equivalent On-Resistance

 1.25W Power Dissipation

 hFE Specified up to 3A for High Current Gain Hold Up

 Complementary PNP Type: ZXTP25100BFH

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: molded plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight 0.008 grams (Approximate)

Applications

 Lamp Relay and Solenoid Drivers

 General Switching in Automotive and Industrial Applications

 Motor Drive and Control

Ordering Information (Note 4)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXTN25100BFHTA

021

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

021 = Product Type Marking Code

SOT23

Top View

Pin-Out

Top View

Device Symbol

C

E

B

C

E

B

021

SOT23

ZXTN25100BFH

Document number: DS33703 Rev. 3 - 2

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A Product Line of

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ZXTN25100BFH

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

170

V

Collector-Emitter Voltage (Forward Blocking)

VCEX

170

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage (Reverse Blocking)

VECO

6

V

Emitter-Base Voltage

VEBO

7

V

Continuous Collector Current

IC

3

A

Peak Pulse Current

ICM

9

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 5)

PD

0.60

4.80

W

mW

(Note 6)

0.73

5.84

(Note 7)

1.05

8.4

(Note 8)

1.25

9.6

(Note 9)

1.81

14.5

Thermal Resistance, Junction to Ambient

(Note 5)

RθJA

209

°C/W

(Note 6)

171

(Note 7)

119

(Note 8)

100

(Note 9)

69

Thermal Resistance, Junction to Leads

(Note 10)

RθJL

75

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 11)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

8,000

V

3B

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in steady-state.

6. Same as Note 5, except mounted with the collector lead on 15mm x 15mm 1oz copper.

7. Same as Note 5, except mounted with the collector lead on 25mm x 25mm 2oz copper.

8. Same as Note 5, except mounted with the collector lead on 50mm x 50mm 2 oz copper.

9. Same as Note 8, except measured at t < 5 seconds.

10. Thermal resistance from junction to solder-point (at the end of collector lead).

11.Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTN25100BFH

Document number: DS33703 Rev. 3 - 2

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Thermal Characteristics and Derating information

020 40 60 80 100 120 140 160 180

1µ

10µ

100µ

100m 110 100

10m

100m

1

10

Safe Operating Area

50mm X 50mm X 1.6mm FR4

2oz Cu

Single Pulse

Tamb=25°C

VCE(sat)

Limited

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

IC Collector Current (A)

VCE Collector-Emitter Voltage (V)

020 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

25mm X 25mm X 1.6mm FR4

2oz Cu

15mm X 15mm X 1.6mm FR4

1oz Cu

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

50mm X 50mm X 1.6mm FR4

2oz Cu

100µ 1m 10m 100m 110 100 1k

0

20

40

60

80

100 Tamb=25°C

50mm X 50mm X 1.6mm FR4

2oz Cu

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s) 100µ 1m 10m 100m 110 100 1k

1

10

100 Single Pulse

Tamb=25°C

50mm X 50mm X 1.6mm FR4

2oz Cu

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

BV(BR)CEV=170V

BV(BR)CEO=100V Failure may occur

in this region

Tamb=25°C

VCE Collector-Emitter Voltage (V)

IC Collector Current (A)

ZXTN25100BFH

Document number: DS33703 Rev. 3 - 2

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

170

220

-

V

IC = 100µA

Collector-Emitter Breakdown Voltage

(Forward Blocking) (Note 12)

BVCEX

170

210

-

V

IC = 100µA, RBE < 1kΩ or

-1V < VBE < 0.25V

Collector-Emitter Breakdown Voltage (Note 12)

BVCEO

100

120

-

V

IC = 1mA

Emitter-Collector Breakdown Voltage

(Reverse Blocking) (Note 12)

BVECX

6

7

-

V

IE = 100µA, RBC < 1kΩ or

0.25V > VBC > -0.25V

Emitter-Collector Breakdown Voltage

BVECO

6

8.4

-

V

IE = 100µA

Emitter-Base Breakdown Voltage

BVEBO

7

8

-

V

IE = 100µA

Collector Cut-Off Current

ICBO

-

<1

50

20

nA

VCB = 136V

VCB = 136V, TA = +100°C

Collector Emitter Cut-Off Current

ICEX

-

100

nA

VCE = 136V, RBE < 1kΩ or

-1V < VBE < 0.25V

Emitter Cut-Off Current

IEBO

-

<1

50

nA

VEB = 5.6V

Static Forward Current Transfer Ratio (Note 12)

hFE

100

50

-

200

85

20

300

-

IC = 10mA, VCE = 2V

IC = 1A, VCE = 2V

IC = 3A, VCE = 2V

Collector-Emitter Saturation Voltage (Note 12)

VCE(sat)

-

40

100

70

200

55

135

80

250

mV

IC = 0.5A, IB = 50mA

IC = 0.5A, IB = 10mA

IC = 1A, IB = 100mA

IC = 3A, IB = 300mA

Base-Emitter Saturation Voltage (Note 12)

VBE(sat)

-

940

1050

mV

IC = 3A, IB = 300mA

Base-Emitter Saturation Voltage (Note 12)

VBE(on)

-

890

1000

mV

IC = 3A, VCE = 2V

Transition Frequency

fT

-

160

-

MHz

IC = 100mA, VCE = 5V,

f = 100MHz

Collector Output Capacitance

Cobo

-

9.4

20

pF

VCB = 10V, f = 1MHz

Delay Time

t(d)

-

16

-

ns

VCC = 10V, IC = 0.5A,

IB1 = -IB2 = 50mA

Rise Time

t(r)

-

55

-

ns

Storage Time

t(s)

-

677

-

ns

Fall Time

t(f)

-

95

-

ns

Note: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

ZXTN25100BFH

Document number: DS33703 Rev. 3 - 2

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ZXTN25100BFH

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1m 10m 100m 110

10m

100m

1

10m 100m 1

0.0

0.1

0.2

0.3

0.4

0.5

1m 10m 100m 110

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1m 10m 100m 1

0.4

0.6

0.8

1.0

1.2

1m 10m 100m 1

0.2

0.4

0.6

0.8

1.0

0

25

50

75

100

125

150

175

200

225

250

275

300

325

350

IC/IB=100

VCE(SAT) v IC

Tamb=25°C

IC/IB=50

IC/IB=20

IC/IB=10

VCE(SAT) (V)

IC Collector Current (A)

150°C

VBE(SAT) v IC

IC/IB=10

100°C

25°C

-55°C

VCE(SAT) (V)

IC Collector Current (A)

150°C

hFE v IC

VCE=2V

-55°C

25°C

100°C

Normalised Gain

IC Collector Current (A)

150°C

25°C

VCE(SAT) v IC

IC/IB=10

100°C

-55°C

VBE(SAT) (V)

IC Collector Current (A)

150°C

VBE(ON) v IC

VCE=2V

100°C

25°C

-55°C

VBE(ON) (V)

IC Collector Current (A)

Typical Gain (hFE)

ZXTN25100BFH

Document number: DS33703 Rev. 3 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between

device terminals and PCB tracking.

SOT23

Dim

Min

Max

Typ

A

0.37

0.51

0.40

B

1.20

1.40

1.30

C

2.30

2.50

2.40

D

0.89

1.03

0.915

F

0.45

0.60

0.535

G

1.78

2.05

1.83

H

2.80

3.00

2.90

J

0.013

0.10

0.05

K

0.890

1.00

0.975

K1

0.903

1.10

1.025

L

0.45

0.61

0.55

L1

0.25

0.55

0.40

M

0.085

0.150

0.110

a

8°

All Dimensions in mm

Dimensions

Value (in mm)

Z

2.9

X

0.8

Y

0.9

C

2.0

E

1.35

J

K1 K

L1

GAUGE PLANE

0.25

H

L

M

All 7°

A

CB

D

G

F

a

XE

Y

C

Z

ZXTN25100BFH

Document number: DS33703 Rev. 3 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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