Advance Technical Information HiPerRFTM Power MOSFETs IXFN 24N100F VDSS ID25 F-Class: MegaHertz Switching RDS(on) D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 24 A TC = 25C, pulse width limited by TJM 96 A IAR TC = 25C 24 A EAR TC = 25C 60 mJ EAS TC = 25C 3.0 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 10 V/ns PD TC = 25C 600 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C - C 2500 3000 V~ V~ VISOL 50/60 Hz, RMS IISOL 1 mA Md t = 1 min t=1s Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Weight miniBLOC, SOT-227 B E153432 S G IDM 1.6 mm (0.63 in) from case for 10 s g S D G = Gate S = Source Features l l l l l Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. l l l VDSS V GS = 0 V, ID = 1 mA 1000 VGH(th) V DS = VGS, ID = 8 mA 3.0 IGSS V GS = 20 VDC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) TJ = 25C TJ = 125C V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2002 IXYS All rights reserved V 5.5 V 200 nA 100 A 3 mA 0.39 RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications l Test Conditions D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source l Symbol V A trr 250 ns Symbol TJ 1000 24 0.39 G S TJ = = = DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages l l l Easy to mount Space savings High power density 98875 (1/02) IXFN 24N100F Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 * ID25, pulse test 16 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 24 S 6600 pF 760 pF 230 pF td(on) 22 ns tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 18 ns td(off) RG = 1 (External), 52 ns 11 ns 195 nC 40 nC 100 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd RthJC 0.21 RthCK 0.05 Source-Drain Diode K/W K/W miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 24 A ISM Repetitive; pulse width limited by TJM 96 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V t rr QRM IRM IF = IS, -di/dt = 100 A/s, VR = 100 V 250 ns C A 1.4 10 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1