Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Key data
Power module using IGBT4 technology in sixpack configuration.
Isolated IGBT driver, protection and temperature sensor included.
Topology B6I
Rated semiconductor data 1200V, 100A
Load type Inductive, resistive
Target application Industrial drives, UPS
Sensors and protection
temperature, short circuit,
signal transmission, UVLO
for all power supplies
Interface IGBT
Electrical, 5V-CMOS,
Galvanic Isolation according
to IEC61800-5-1
Standards IEC61800-5-1, UL94, RoHS
Note: tbd = to be defined
If not otherwise specified, use typical values for UGSNx and UGSPx
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Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Electrical data – power part
min typ max
DC link voltage
Ls = tbd
-40 < Tvj < 150°C
0 < IC turn off < 2*IC max
UDC 900 V
DC continuous current Tcase = 100°C
Tvj = Tvjop max IC nom 100 A
IGBT collector emitter voltage Tvj=25°C UCES 1200 V
IGBT collector emitter
saturation voltage
Tvj =25°C @ IC=100A
Tvj =150°C @ IC=100A UCEsat
1,75
2,10
2,15
V
Diode repetitive peak reverse
voltage Tvj=25°C URRM 1200 V
Diode forward voltage Tvj =25°C @ IC=100A
Tvj =150°C @ IC=100A UF
1,70
1,65
2,15
V
Operating junction temperature IGBT and Diode Tvjop 150 °C
Turn on energy loss per puls IGBT, UDC=600V, IC=100A
Tvj=150°C, di/dt,= 1,8kA/µs Eon 10,2 mJ
Turn off energy loss per puls IGBT, UDC=600V, IC=100A
Tvj=150°C, du/dt = 3,6kV/µs Eoff 8,0 mJ
Reverse recovery energy Diode, UDC=600V, IF=100A
Tvj=150°C, di/dt = 1,8kA/µs Erec 8 mJ
Electrical data – control part
Auxiliary power supply: IGBT Gate (on X1) min typ max
Voltage UGS P1,2,3,4 13 16 18 V
IGS P1,2,3 14 mA
IGBT driver positive supply Current at fsw = 20kHz,
UGSP1,2,3 = +15V,
Tvj = 25°C IGS P4 26 mA
Voltage UGS N1,2,3,4 -10 -8 -5 V
|IGS N1,2,3| 13 mA
IGBT driver negative supply Current @ fsw = 20kHz,
UGSN = -8V,
Tvj = 25°C |IGS N4| 18 mA
IGBT driver undervoltage lockout
threshold For each channel UGS_UVLO 10,4 12,6 V
IGBT driver undervoltage lockout
hysteresis For each channel UGS_UVLO_H 0,7 V
Auxiliary power supply: Logic (on X2) min typ max
Voltage ULS 4,5 5 5,5 V
Logic power supply Current @ fsw = 20kHz,
ULS = +5V ILS 55 mA
Logic power supply undervoltage
lockout threshold U
LS_UVLO 3,5 4,3 V
Logic power supply undervoltage
lockout hysteresis U
LS_UVLO_H 0,3 V
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Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Driver logic input/output, protection and sensors (on X2) min typ max
High level voltage UIN_H 3,5 5,5 V
Low level voltage UIN_L -0,3 1,5 V
Input current per input IIN 100 400 µA
Minimum pulse width on /RST
for ENABLE/SHUTDOWN tmin RST1 40 ns
Digital input
(IGBT turn-on/off and RESET)
Minimum pulse width on /RST
for resetting /FLTBOT, /FLTTOP tmin RST2 500 ns
Digital output level Open drain, internally pulled
up, max. tbd mA
URDYT,
URDYB,
UFLTT,
UFLTB,
UTMP
0 ULS V
Frequency depends on
measured temperature fTMP 0,2 18 kHz
Digital temperature output
Pulses counted in 100ms N 20 1800
Minimum pulse width IGBT-turn-on signal (=high) on
each channel @ UDC max tPW_min 1 µs
Minimum dead time Between TOP IGBT and BOT
IGBT tdead 1 µs
Switching frequency Each driver channel fsw 0 20 kHz
Desaturation threshold.
Shutdown when exceeded.
Each channel
UCE_desat 8,5 9 9,5 V
Short circuit protection Reaction time. Shutdown after
short circuit was detected.
Each channel
tdesat 8 µs
Propagation delay Each channel tprop_delay 320 ns
Propagation delay deviation Between two channels tprop delay dev 15 ns
Isolation Management min typ max
Isolation management designed for ULine 480 VRMS
Logic to power side
f=50Hz, t=1s Visol 2,5 kVRMS
Isolation test voltage Life parts to base plate
F=50Hz, 1=1min Visol 2,5 kVRMS
Comparative tracking index CTI 225
terminal – terminal
(AC-DC, AC-AC, DC-DC) lcl1 11 mm
power side – heat sink lcl2 11 mm
Logic side - heatsink lcl3 4,5 mm
Clearance distance, including internal
clearance
DIN7984 with flat head,
SKS-5 spring washer,
DIN125 flat washer, Logic side - power side lcl4 8 mm
terminal – terminal
(AC-DC, AC-AC, DC-DC) lcr1 25 mm
terminal – heat sink lcr2 20 mm
Logic side - heatsink lcr3 8,5 mm
Creepage distance
Under usage of screws according
DIN7984 with flat head,
SKS-5 spring washer,
DIN125 flat washer Logic side - power side lcr4 8 mm
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Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Environmental conditions min typ max
Storage temperature Tstg -40 +125 °C
Operating ambient temperature fSW ≤ 20kHz -40 +65 °C
Humidity no condensation Rel. H. 5 85 %
Installation height 1000 m
Vibration according to IEC60721 12 g
Shock according to IEC60721 10 g
Protection degree IP00
Pollution degree 2
Terminal connection torque Screw M6 MM6 3,0 6,0 Nm
Mounting torque Screw M5 MM5 3,0 6,0 Nm
Insertion force connector X1 FX1 tbd N
Insertion force connector X2 FX2 tbd N
Dimensions length x width x height 130 x 103 x 28,5 mm³
Weight 419 g
Thermal data min typ max
Thermal resistance junction to case Each IGBT Rthjc_IGBT
0,3 K/W
Thermal resistance junction to case Each Diode Rthjc_FWD
0,55 K/W
Thermal resistance case to heatsink Complete module Rthch_Module 0,009 K/W
Modul /module min typ max
Stray inductance module LsCE
20 nH
Material of module baseplate Cu
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Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Digital temperature output
Number of pulses within 100ms
0
100
200
300
400
500
600
700
800
900
1000
-40-30-20-10 0 10 2030405060708090100110120
TNTC [°C]
1/100ms
Output characteristic IGBT
I
C
= f(U
CE
) @ U
GSPx
= 16V
0
20
40
60
80
100
120
140
160
180
200
0 0,5 1 1,5 2 2,5 3
UCE [V]
IC [A]
- - - Tvj
= 150°C
_
____ Tvj
= 25°C
Output characteristic IGBT
I
C
= f(U
CE
) @ T
vj
= 150°C
0
20
40
60
80
100
120
140
160
180
200
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
UCE [V]
IC [A]
…….. UGSPx = 18V
- - - UGSPx = 16V
_
____ UGSPx = 14V
Switching losses diode
E
rec
= f(I
F
) @ U
CE
= 600V, T
vj
= 150°C
0
1
2
3
4
5
6
7
8
9
10
11
12
0 25 50 75 100 125 150 175 200
I
F
[A]
E [mJ]
_
___
E
rec
Forward characteristic diode
IF = f(UF)
0
20
40
60
80
100
120
140
160
180
200
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4
UF [V]
IF [A]
- - - Tvj
= 150°C
_
____ Tvj
= 25°C
Switching losses IGBT
Eon = f(IC), Eoff = f(IC)
UGSPx = 16V, UGSNx = -8V, Tvj = 150°C
0
4
8
12
16
20
24
28
0 25 50 75 100 125 150 175 200
IC [A]
E [mJ]
- - - Eof f
_
____ Eon
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Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Mechanical drawing
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Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Circuit diagram
V
High voltage
area in grey
High voltage
area in grey
Galvanic
Isolation
high voltage area
Connector X2
digital I/O and
power supply for digital I/O circuit
W
DC+
U
Connector X1
power supply for
IGBT Gate
NTC
EiceDRIVER™
T1
EiceDRIVER™
B1
EiceDRIVER™
T2
EiceDRIVER™
B2
EiceDRIVER™
T3
EiceDRIVER™
B3
EiceDRIVER™
HB1H
21
19
17
15
13
11
9
7GND
GND
GND
GND
GND
GND
GND
GND
22IN
T1
1IN
B1
20IN
T2
2IN
B2
18IN
T3
4IN
B3
14RDY
T
8RDY
B
16/FLT
T
6/FLT
B
3/RST
4T3
pos
1T3
GND
3T3
neg
8
7
9
14
13
15
19
21
20
T2
pos
T2
GND
T2
neg
T1
pos
T1
GND
T1
neg
B
pos
B
GND
B
neg
12V
CC
10TMP
DC-
5GND
U
GS P1
= U(T1
pos
) – U(T1
GND
)
U
GS N1
= U(T1
neg
) – U(T1
GND
)
U
GS P2
= U(T2
pos
) – U(T2
GND
)
U
GS N2
= U(T2
neg
) – U(T2
GND
)
U
GS P3
= U(T3
pos
) – U(T3
GND
)
U
GS N3
= U(T3
neg
) – U(T3
GND
)
U
GS P4
= U(B
pos
) – U(B
GND
)
U
GS N4
= U(B
neg
) – U(B
GND
)
U
LS
= U(V
CC
) – U(GND)
U
IN_H
= U(V
INx
) – U(GND)
for high input signal
IGBT turn-on
U
IN_L
= U(V
INx
) – U(GND)
for low input signal
IGBT turn-off
U
RDY_T
= U(RDY
T
) – U(GND)
U
RDY_B
= U(RDY
B
) – U(GND)
U
FLT_T
= U(/FLT
T
) – U(GND)
U
FLT_B
= U(/FLT
B
) – U(GND)
U
TMP
= U(TMP) – U(GND)
Pin Datasheet value
Pin Datasheet value
low voltage area
Connector X1 and X2 Power connector
MIPAQ™serve inside
Further information
X1: Molex Microfit 22 pins
X2: Molex Milligrid 22 pins
All information regarding connectors can be found in AN2009-07
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Technical Information
MIPAQ™serve IFS100V12PT4
preliminary data
prepared by: Marco Bohlländer date of publication: 08.06.2010
approved by: Martin Schulz revision: 2.0
Nutzungsbedingungen
Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die
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Terms & Conditions of usage
The data contained in this technical information is exclusively intended for technically trained staff. You and your technical
departments will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is
granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the
product and its specifications.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific
application of our product, please contact the sales office, which is responsible for you (see www.infineon.com, sales&contact).
For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please
contact the sales office, which is responsible for you.
Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that
for any such applications we urgently recommend
- to perform joint Risk and Quality Assessments;
- the conclusion of Quality Agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization
of any such measures.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
Sicherheitshinweise
Bevor Sie mit der Installation und dem Betrieb der Baugruppe beginnen, lesen Sie bitte sorgfältig alle Sicherheitshinweise und
Warnungen.
Safety Instructions
Prior to installation and operation, all safety notices and warnings have to be carefully read.
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