BYW32, BYW33, BYW34, BYW35, BYW36 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES * Glass passivated junction * Hermetically sealed package * Low reverse current * Soft recovery characteristics * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 * Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-57 * Fast rectification an switching diode for example for TV-line output circuits and switch mode power supply Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW32 VR = 200 V; IFAV = 2 A SOD-57 BYW33 VR = 300 V; IFAV = 2 A SOD-57 BYW34 VR = 400 V; IFAV = 2 A SOD-57 BYW35 VR = 500 V; IFAV = 2 A SOD-57 BYW36 VR = 600 V; IFAV = 2 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage Peak forward surge current See electrical characteristics PART SYMBOL VALUE UNIT BYW32 VR = VRRM 200 V BYW33 VR = VRRM 300 V BYW34 VR = VRRM 400 V BYW35 VR = VRRM 500 V BYW36 VR = VRRM 600 V A tp = 10 ms, half sine wave IFSM 50 IFRM 12 A = 180 IFAV 2 A I(BR)R = 0.4 A ER 10 mJ Tj = Tstg - 55 to + 175 C Repetitive peak forward current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient Document Number: 86048 Rev. 1.7, 30-Jul-10 TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYW32, BYW33, BYW34, BYW35, BYW36 Fast Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 1 A VF - 0.95 1.1 V VR = VRRM IR - 1 5 A VR = VRRM, Tj = 150 C IR - 60 150 A IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns Forward voltage Reverse current Reverse recovery time PART UNIT TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 2.5 IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) 120 100 80 60 l l 40 20 TL = constant VR = VRRM half sinewave 2.0 1.5 1.0 5 10 15 20 25 0 0 30 l - Lead Length (mm) 949552 RthJA = 100 K/W PCB: d = 25 mm 0.5 0 0 RthJA = 45 K/W I = 10 mm Fig. 1 - Max. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C) 16346 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 10 IR - Reverse Current (A) IF - Forward Current (A) VR = VRRM Tj = 175 C 1 Tj = 25 C 0.1 0.01 100 10 1 25 0.001 0 16345 0.5 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage www.vishay.com 2 16347 50 75 100 125 150 175 Tj - Junction Temperature (C) Fig. 4 - Reverse Current vs. Junction Temperature (C) For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86048 Rev. 1.7, 30-Jul-10 BYW32, BYW33, BYW34, BYW35, BYW36 300 Vishay Semiconductors 40 f = 1 MHz VR = VRRM CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) Fast Avalanche Sinterglass Diode 250 200 PR-Limit at 100 % VR 150 100 PR-Limit at 80 % VR 50 35 30 25 20 15 10 5 0 25 50 75 100 125 150 0 0.1 175 Tj - Junction Temperature (C) 16348 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Zthp - Thermal Resist. for Pulse Cond. (K/W) 1 10 100 VR - Reverse Voltage (V) 16349 Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 VRRM = 600 V RthJA = 100 K/W 100 Tamb = 25 C tp/T = 0.5 45 C 0.2 0.1 50 C 100 C 10 0.02 70 C 0.01 1 10-5 10-4 949561 Single pulse 10-3 10-2 10-1 100 101 tp - Pulse Length (s) 100 101 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Document Number: 86048 Rev. 1.7, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000