RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features * * * * * * Packages JEDEC STYLE TO-247 50A, 60V rDS(ON) = 0.022 Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve +175oC Operating Temperature SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) Description The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND TO-247 RFG50N06 RFP50N06 TO-220AB RFP50N06 RF1S50N06 TO-262AA F1S50N06 RF1S50N06SM TO-263AB F1S50N06 JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) A RFG50N06 NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e.RF1S50N06SM9A. Formerly developmental type TA49018. Symbol JEDEC TO-263AB D M A A DRAIN (FLANGE) GATE SOURCE G S Absolute Maximum Ratings TC = +25oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS VDGR VGS RFG50N06, RFP50N06 RF1S50N06, RF1S50N06SM 60 60 20 ID IDM EAS IAM 50 Refer to Peak Current Curve Refer to UIS Curve 125 A PD PT TSTG,TJ 131 0.877 -55 to +175 W W/oC oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright (c) Harris Corporation 1995 3-39 UNITS V V V File Number A 3575.2 Specifications RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Electrical Specifications TC = +25oC, Unless Otherwise Specified. PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A 2 - 4 V TC = +25oC - - 1 A TC = +150oC - - 50 A VGS = 20V - - 100 nA ID = 50A, VGS = 10V - - 0.022 VDD = 30V, ID = 50A RL = 0.6, VGS = +10V RGS = 3.6 - - 95 ns - 12 - ns tR - 55 - ns tD(OFF) - 37 - ns tF - 13 - ns tOFF - - 75 ns - 125 150 nC - 67 80 nC Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time tD(ON) Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge VDS = 60V, VGS = 0V QG(TOT) VGS = 0 to 20V VDD = 48V, ID = 50A, RL = 0.96 Gate Charge at 10V QG(10) VGS = 0 to 10V Threshold Gate Charge QG(TH) VGS = 0 to 2V - 3.7 4.5 nC VDS = 25V, VGS = 0V f = 1MHz - 2020 - pF Input Capacitance CISS Output Capacitance COSS - 600 - pF Reverse Transfer Capacitance CRSS - 200 - pF Thermal Resistance Junction to Case RJC - - 1.14 oC/W Thermal Resistance Junction to Ambient RJA - - 80 oC/W Source-Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage VSD ISD = 50A - - 1.5 V Reverse Recovery Time tRR ISD = 50A, dISD/dt = 100A/s - - 125 ns 3-40 RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Typical Performance Curves TC = +25oC 10 ZJC, NORMALIZED THERMAL RESPONSE ID , DRAIN CURRENT (A) 400 100 100s 1ms 10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS MAX = 60V 0.5 10 VDS , DRAIN-TO-SOURCE VOLTAGE (V) PDM 0.2 0.1 0.05 0.1 t1 t2 0.02 0.01 100ms DC NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 1 1 1 100 10-4 10-3 10-2 10-1 FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = +25oC IDM , PEAK CURRENT CAPABILITY (A) 60 ID , DRAIN CURRENT (A) 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE 150 103 VGS = 20V ID(ON) , ON STATE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 8V 100 VGS = 7V 75 VGS = 6V 50 VGS = 5V 25 175 - T C 25 ----------------------150 102 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-3 10-2 10-1 100 101 102 t, PULSE WIDTH (ms) 103 104 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250s, TC = +25oC VGS = 10V I = I VGS = 10V 40 175 (oC) FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 125 101 100 t, RECTANGULAR PULSE DURATION (s) VGS = 4V VDD = 15V 125 -55oC +25oC PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 100 +175oC 75 50 25 0 0 0.0 1.5 3.0 4.5 6.0 0.0 7.5 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3-41 RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Typical Performance Curves (Continued) VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 VGS = VDS, ID = 250A 2.0 1.5 1.0 0.5 0.0 -80 200 -40 TJ , JUNCTION TEMPERATURE (oC) ID = 250A 1.0 0.5 160 200 0.8 0.6 0.4 0.2 0.0 -40 0 40 80 120 160 200 0 25 VDS , DRAIN-SOURCE VOLTAGE (V) CISS 2000 COSS CRSS 0 10 15 20 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE 125 150 175 10 VDD = BVDSS 25 VDD = BVDSS 7.5 45 5.0 30 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS RL = 1.2 IG(REF) = 1.45mA VGS = 10V 15 2.5 0 0 5 100 60 3000 1000 75 FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE VGS = 0V, f = 1MHz 4000 50 TC , CASE TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE C, CAPACITANCE (pF) 120 1.0 TJ , JUNCTION TEMPERATURE (oC) 0 80 1.2 1.5 0.0 -80 40 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE POWER DISSIPATION MULTIPLIER BVDSS , NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 2.0 0 TJ , JUNCTION TEMPERATURE (oC) 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTE AN7254 AND AN7260 3-42 VGS , GATE-SOURCE VOLTAGE (V) rDS(ON), NORMALIZED ON RESISTANCE PULSE DURATION = 250s, VGS = 10V, ID = 50A 2.5 RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Typical Performance Curves (Continued) IAS, AVALANCHE CURRENT (A) 300 100 10 STARTING TJ = +25oC STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (msec) FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms BVDSS tP VDS VDS L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS RG + DUT - VGS tP 0V tAV IL 0.01 FIGURE 14. UNCLAMPED ENERGY WAVEFORMS tON tOFF tD(ON) VDD tD(OFF) tR VDS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT tF 90% RL 90% VDS VGS 10% 10% DUT 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 16. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT 3-43 VDD RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Temperature Compensated PSPICE Model for the RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM .SUBCKT RFP50N06 2 1 3 REV 2/22/93 * NOM TEMP = +25oC CA 12 8 3.68e-9 CB 15 14 3.625e-9 CIN 6 8 1.98e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD DPLCAP - DBREAK 9 1 LGATE - 20 RGATE 18 8 - IT 8 17 1 VTO 16 + + EVTO GATE RDRAIN 6 8 ESG + EBREAK 11 7 17 18 64.59 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 DRAIN 2 LDRAIN 5 10 6 EBREAK MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 S1A S2A 13 8 S1B 14 13 17 18 CIN 8 12 11 MOS1 RIN LDRAIN 2 5 1e-9 LGATE 1 9 5.65e-9 LSOURCE 3 7 4.13e-9 DBODY MOS2 21 RSOURCE 15 17 + 7 LSOURCE RBREAK S2B 3 SOURCE 18 RVTO 13 CA RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 1e-4 RGATE 9 20 0.690 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 12e-3 RVTO 18 19 RVTOMOD 1 + EGS 6 - 8 CB 14 + 5 EDS 8 - IT 19 - VBAT + S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.678 .MODEL DBDMOD D (IS=9.851e-13 RS=4.91e-3 TRS1=2.07e-3 TRS2=2.51e-7 CJO=2.05e-9 TT=4.33e-8) .MODEL DBKMOD D (RS=1.98e-1 TRS1=-2.35e-3 TRS2=-3.83e-6) .MODEL DPLCAPMOD D (CJO=1.42e-9 IS=1e-30 N=10) .MODEL MOSMOD NMOS (VTO=3.65 KP=35 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=1.23e-3 TC2=-2.34e-6) .MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.49e-5) .MODEL RVTOMOD RES (TC1=-5.03e-3 TC2=-5.16e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.75 VOFF=-2.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.5 VOFF=-6.75) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.7 VOFF=2.3) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.3 VOFF=-2.7) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. 3-44