CHA2394
Ref. : DSCHA23942240 -28-Aug.-02 1/8 Specif i cations subject t o change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Very Low Noise High Gain Amplifier
GaAs Monolithic M i crowave IC
Description
The CHA2394 is a three-stage monolithic
low noise amplif ier. I t is designed f or a wide
range of applications, from military to
commercial communication systems.
The circuit is manufactured with a HEMT
process : 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip f or m.
Main Features
■ Broadband performances : 36- 40GHz
■ 2.5dB Noise Figur e
■ 21dB gain
■ ±1.5dB gain flatness
■ Low DC power consumption, 60mA @
3.5V
■ Chip size : 1.72 X 1.08 X 0.10 mm
Vgs1&2 Vgs3
Vds
IN OUT
Vds
Typical on wafer measurements :
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating fr equency range 36 40 GHz
G Small signal gain 18 21 dB
P1dB Output power at 1dB gain compression 8 12 dBm
NF Noise figure 2.5 3.0 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
10
12
14
16
18
20
22
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Gain (dB)
1
1,5
2
2,5
3
3,5
4
NF (dB)
CHA2394 36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23942240 -28-Aug.-02 2/8 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25°C, Vd1, 2, 3 = 3. 5V
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 36 40 GHz
G Small signal gain (1) 18 21 dB
∆G Small signal gain flatness (1) ±1.5 dB
∆Gsb Gain flatness over 40MHz ( within -30 ; +75°C ) 0.5 dBpp
Is Reverse isolation (1) 25 30 dB
P1dB Output power at 1dB gain compression 5 8 dBm
VSWRin Input VSWR (1) 2.5:1 3.0:1
VSWRout Output VSWR (1) 2.5:1 3.0:1
NF Noise figure (2) 2.5 3.0 dB
Vd DC Voltage Vd
Vg
-2 3.5
-0.25 4
+0.4 V
V
Id Bias current (2) 60 mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For
optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2
voltage.
Absolute Maximum Ratings (1)
Tamb. = 25°C
Symbol Parameter Values Unit
Vd Drain bias voltage 5.0 V
Id Drain bias current 150 mA
Vdg Maximum drain to gate voltage (Vd - Vg) +5.0 V
Vg Gate bias voltage -2.0 to +0.4 V
Pin Maximum peak input power overdrive (2) +15 dBm
Pin Maximum continuous input power -5 dBm
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
36-40GHz Very Low Noise Amplifier CHA2394
Ref. : DSCHA23942240 -28-Aug.-02 3/8 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Scattering Para meter s ( On wafer Sij measurements )
Bias Conditions : Vd = 3.5 Volt, I d = 60 m A.
Freq.
GHz S11
dB S11
/
//
/° S12
dB S12
/
//
/° S21
dB S21
/
//
/° S22
dB S22
/
//
/°
20,00 -2,75 120,50 -48,15 148,90 -29,86 60,85 -8,63 -167,63
21,00 -2,67 112,34 -47,38 124,38 -30,25 88,05 -8,34 -172,68
22,00 -2,61 103,14 -46,75 104,04 -27,37 109,54 -8,61 -179,98
23,00 -2,64 93,91 -47,13 86,03 -24,34 126,91 -8,92 172,06
24,00 -2,70 84,09 -47,59 78,03 -19,83 140,52 -9,57 163,86
25,00 -2,86 73,06 -47,20 57,56 -14,48 146,82 -10,03 156,11
26,00 -3,14 60,56 -48,55 43,27 -8,77 144,71 -10,82 146,54
27,00 -3,69 45,51 -51,10 30,27 -2,99 136,53 -12,09 136,06
28,00 -4,64 26,86 -53,09 53,09 3,00 121,47 -13,97 127,00
29,00 -6,67 1,63 -49,95 40,63 9,18 98,55 -17,34 120,22
30,00 -12,47 -33,41 -46,00 19,49 15,20 62,25 -22,38 145,19
31,00 -24,80 45,44 -42,45 -42,78 18,91 12,46 -16,56 167,67
32,00 -17,12 23,80 -41,43 -103,62 19,89 -32,13 -14,80 144,56
33,00 -23,20 -42,55 -40,56 -152,24 20,36 -67,68 -16,05 123,76
34,00 -19,03 -169,48 -39,68 170,39 20,77 -100,08 -18,09 107,73
35,00 -12,46 150,31 -38,71 143,10 20,98 -130,13 -21,69 77,58
36,00 -9,33 121,49 -37,54 123,52 21,06 -159,84 -27,59 9,57
37,00 -8,60 98,97 -36,14 104,39 20,87 172,52 -22,46 -82,68
38,00 -8,42 82,30 -34,82 83,69 20,58 146,27 -17,76 -110,30
39,00 -8,47 68,26 -33,60 64,74 20,27 121,22 -14,75 -129,22
40,00 -9,42 54,37 -32,98 45,70 19,84 95,76 -12,44 -146,78
41,00 -10,23 46,67 -32,48 26,65 19,24 72,14 -11,06 -164,32
42,00 -10,72 39,92 -32,21 11,28 18,67 50,20 -10,53 -179,35
43,00 -10,45 31,54 -31,68 -6,54 18,19 28,89 -10,41 170,06
44,00 -9,61 16,79 -31,02 -24,45 17,83 6,99 -10,02 160,92
45,00 -8,75 -4,98 -30,90 -42,39 17,42 -15,61 -9,83 151,98
46,00 -7,93 -30,22 -30,45 -61,72 17,00 -38,88 -9,17 144,58
47,00 -6,42 -61,17 -30,47 -83,47 16,37 -63,88 -8,39 134,96
48,00 -4,94 -93,19 -31,52 -107,28 15,28 -89,82 -7,55 121,85
49,00 -3,67 -122,84 -32,48 -128,35 13,83 -114,96 -6,98 108,11
50,00 -2,71 -147,44 -33,68 -147,17 12,15 -137,91 -6,69 91,01
CHA2394 36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23942240 -28-Aug.-02 4/8 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Output Power ( P-1dB gain compression ) Measurements.
( CW on wafer )
Conditions : Vd = 3.5 Volt, Frequency = 38 GHz.
Conditions : Id = 60 mA, Frequency = 38 GHz.
4
6
8
10
12
14
16
18
20
22
20 30 40 50 60 70 80 90 100
Cu rren t Id ( mA )
Gain & P-1dB ( dB, dBm )
Gain P- 1 dB
4
6
8
10
12
14
16
18
20
22
2,5 3 3,5 4 4,5
Bias v olt age Vd ( Vol t )
Gain & P-1dB ( dB, dBm )
Gain P-1dB
36-40GHz Very Low Noise Amplifier CHA2394
Ref. : DSCHA23942240 -28-Aug.-02 5/8 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical S parameters Measurements ( on wafer ).
Bias Conditions : Vd = 3.5 Volt, I d = 60 m A.
Typical Gain &NF Measurements ( on wafer ).
Bias Conditions : Vd = 3.5 Volt, I d = 60 m A.
10
12
14
16
18
20
22
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Gain (dB)
1
1,5
2
2,5
3
3,5
4
NF (d B)
-20
-15
-10
-5
0
5
10
15
20
25
25 30 35 40 45 50
Frequency (GHz)
Ga in, Rlos s (d B)
dBS11 dBS21 dBS22
CHA2394 36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23942240 -28-Aug.-02 6/8 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typi cal Bias Tuning for Low Noise Operation
The circuit schem atic is given below :
IN OUT
Vd
Vg 1,2 Vg 3
100 100 50
For low noise oper ation, a separate acc ess to the gate voltages of the two first s tages ( Vgs 1&2 ), and
of the output stage ( Vgs3 ) is provided.
Nominal bias f or low noise operation is obtained f or a typical current of 20 m A f or the output stage and
15 mA for each of the two first stages ( 50 mA for the amplifier ).
The first step to bias the amplifier is to tune the Vgs1&2 = -1V, and Vgs3 to drive 20 mA for the full
amplifier. Then Vgs1&2 is reduced to obtain 50 mA of current through the amplifier.
A fine tuning of the noise figure may be obtained by modifying the Vgs1&2 bias voltage, but keeping
the previous value for Vgs3.
36-40GHz Very Low Noise Amplifier CHA2394
Ref. : DSCHA23942240 -28-Aug.-02 7/8 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
To Vdd DC Drain supply feed
To Vgs 1&2 DC Gate supply feed To Vgs 3 DC Gate supply feed
100pF 100pF
100pF
IN OUT
Note : Supply feed should be capacitively bypassed.
1080 +/- 60
1125
505
415
340
415
710
1720+/-60
Bonding pad positions.
( Chip thickness : 100µm. All dimensions are in micrometers )
CHA2394 36-40GHz Very Low Noise Amplifier
Ref. : DSCHA23942240 -28-Aug.-02 8/8 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Orderi ng I nfor m ati on
Chip for m : CHA2394- 99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
