5STR 04T2032
TS - TP/188/05 Jul-10 1 of 8
5STR 04T2032
Old part no. TP 907FC-370-20
Reverse Conducting Thyristor
Properties Key Parameters
§ Integrated freewheeling diode VDRM
=
2 000 V
§ Optimized for low dynamic losses ITAVm
=
374 A
ITSM
=
5 000 A
VTO
=
1.748 V
Applications rT
=
0.653 mΩ
§ Traction tq
=
32 µs
Types
VDRM
5STR 04T2032..2040
5STR 04T1832..1840 2 000 V
1 800 V
Conditions:
Tj = -40 ÷ 125 °C, half sine waveform,
f = 50 Hz
Mechanical Data
Fm Mounting force
10 ± 2
kN
m Weight 0.20
kg
DS Surface
creepage
distance
13
mm
Da Air strike
distance 8
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5STR 04T2032
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/188/05 Jul-10 2 of 8
Maximum Ratings - Thyristor Maximum Limits Unit
VDRM
Repetitive peak off-state
voltage
Tj = -40 ÷ 125 °C
5STR 04T2032..2040
5STR 04T1832..1840
2 000
1 800 V
ITRMS RMS on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 588 A
ITAVm Average on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 374
A
ITSM Peak non-repetitive surge
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 5 000
5 300 A
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 125 000
118 000 A2s
(diT/dt)cr Critical rate of rise of on-state current
IT = 1 000 A, VD = 0.67 VDRM,
half sine waveform, f = 50 Hz
400 A/µs
(dvD/dt)cr Critical rate of rise of off-state voltage
VD = 0.67 VDRM 1 000 V/µs
PAV Maximum average gate power losses 5 W
IGTM Peak gate current 25 A
VGTM Peak gate voltage 15 V
VRGTM Reverse peak gate voltage 2 V
Tjmin - Tjmax Operating temperature range -40 ÷ 125 °C
Tstgmin -
Tstgmax Storage temperature range -40 ÷ 125 °C
Unless otherwise specified Tj = 125 °C
Maximum Ratings - Diode Maximum Limits Unit
VRRM Repetitive peak reverse
voltage
Tj = -40 ÷ 125 °C
5STR 04T2032..2040
5STR 04T1832..1840
2 000
1 800 V
IFRMS RMS forward current
Tc = 70 °C, half sine waveform, f = 50 Hz 453 A
IFAVm Average forward current
Tc = 70 °C, half sine waveform, f = 50 Hz 288
A
IFSM Peak non-repetitive surge
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 3 500
3 800 A
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 61 000
58 000 A2s
Unless otherwise specified Tj = 125 °C
5STR 04T2032
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/188/05 Jul-10 3 of 8
Characteristics – Thyristor Value Unit
min. typ. max.
VTM Maximum peak on-state voltage
ITM = 1 000 A 2.420
V
VT0 Threshold voltage 1.748
V
rT Slope resistance
IT1 = 581 A, IT2 = 1 744 A 0.653
mΩ
IDM Peak off-state current
VD = VDRM 70 mA
tgd Delay time
Tj = 25 °C, VD = 100 V, ITM = ITAVm, tr = 0.5 µs, IGT = 2 A 1 µs
tgt Switch-on time
the same conditions as at tgd 4 µs
group of tq
tq Turn-off time
IT = ITAVm, diT/dt = -50 A/µs,
VD = 0.67 VDRM, dvD/dt = 50 V/µs 5STR 04T2032
5STR 04T1832
5STR 04T2040
5STR 04T1840
32
40
µs
IH Holding current Tj = 25 °C
Tj = 125 °C 500 mA
IL Latching current Tj = 25 °C
Tj = 125 °C 5 000
mA
VGT Gate trigger voltage
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = +25 °C
Tj = +125 °C
0.25
4.5
2.5
2.0
V
IGT
Gate trigger current
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = +25 °C
Tj = +125 °C
10
1000
400
250
mA
Unless otherwise specified Tj = 125 °C
5STR 04T2032
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/188/05 Jul-10 4 of 8
Characteristics – Diode Value Unit
min. typ. max.
VFM Maximum forward voltage
IFM = 1 000 A 2.170
V
VT0 Threshold voltage
IF1 = 454 A, IF2 = 1 362 A 1.419
V
rT Forward slope resistance 0.714
mΩ
Qrr Reverse recovery charge
IFM = ITAVm, diF/dt = -50 A/µs, VD = 100 V 250 µC
IrrM Maximum reverse recovery current
the same conditions as at Qrr 150 A
trr Reverse recovery time
the same conditions as at Qrr 4 µs
Unless otherwise specified Tj = 125 °C
Thermal Parameters - Thyristor Value Unit
Rthjc Thermal resistance junction to case
double side cooling 55 K/kW
anode side cooling 91
cathode side cooling 140
Rthch Thermal resistance case to heatsink
double side cooling 10 K/kW
single side cooling 20
Thermal Parameters - Diode Value Unit
Rthjc Thermal resistance junction to case
double side cooling 88 K/kW
anode side cooling 190
cathode side cooling 165
5STR 04T2032
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/188/05 Jul-10 5 of 8
Transient Thermal Impedance - Thyristor
i 1 2 3 4 5
τi ( s ) 1.62 0.111 0.0236 0.00322
0.307e-3
Ri( K/kW )
3.77 36.70 9.64 3.54 1.38
0
10
20
30
40
50
60
0,001 0,01 0,1 1 10 100
Square wave pulse duration td ( s )
Transient thermal impedance
junction to case Zthjc ( K/kW )
Correction for periodic
waveforms - Thyristor
180°
sine: add 7.4 K/kW
180°
rectangular:
add 8.4 K/kW
120°
rectangular:
add 13.8 K/kW
60°
rectangular:
add 23.8 K/kW
Analytical function for transient
thermal impedance
∑
=−−= 5
1))/exp(1(
iiithjc tRZ τ
Conditions:
Fm = 10 ± 2 kN, Double side cooled
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse - Thyristor
Diode
i 1 2 3 4 5
τi ( s ) 0.401 0.108 0.0267 0.0034 0.584e-3
Ri( K/kW )
23.00 41.00 17.20 3.47 2.50
Correction for periodic
waveforms - Diode
180°
sine: add 10.7 K/kW
180°
rectangular:
add 11.1 K/kW
120°
rectangular:
add 18.2 K/kW
60°
rectangular:
add 31.9 K/kW
0
10
20
30
40
50
60
70
80
90
0,001 0,01 0,1 1 10 100
Square wave pulse duration t
d
( s )
Transient thermal impedance
junction to case Z
thjc
( K/kW )
Fig. 3
Dependence transient thermal impedance junction
to case on square pulse - Diode
5STR 04T2032
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/188/05 Jul-10 6 of 8
0
500
1000
1500
2000
2500
3000
01234
VT ( V )
IT ( A )
125 °C
Tj
= 25 °C
2
3
4
5
6
7
8
110 100
t ( ms )
ITSM ( kA )
0,08
0,1
0,12
0,14
0,16
0,18
0,2
i2dt (106 A2s)
I
TSM
∫
i2dt
Fig. 4
Maximum on-state characteristics Fig. 5
Surge on-state current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
0,1
1
10
100
0,1 1 10 100
IFGM ( A )
tgd ( µs )
10
20
30
40
50
60
70
80
90
100
20 40 60 80 100 120 140
Tj ( °C )
%
min.
max.
average
Fig. 6
Delay time vs. forward gate current,
Tj = 25 °C, VD = 100 V, ITM = ITAVm,
tr ≤ 0.5 µs, tp =1 ms
Fig. 7
Relative value of turn-off time
vs. junction temperature
5STR 04T2032
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/188/05 Jul-10 7 of 8
0
200
400
600
800
1000
0 100 200 300 400 500
ITAV ( A )
PT ( W )
ψ = 30°
60°
90°
120°
180
DC
0
200
400
600
800
1000
0 100 200 300 400 500
ITAV ( A )
PT ( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
Fig. 8
On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 9
On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f
60
70
80
90
100
110
120
130
0100 200 300 400 500
ITAV ( A )
TC ( °C )
180°
60°
90°
120°
ψ
= 30°
DC
60
70
80
90
100
110
120
130
0100 200 300 400 500
ITAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
Fig. 10
Max. case temperature vs. aver. on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 11
Max. case temperature vs. aver. on-state
current, square waveform, f = 50 Hz, T = 1/f
5STR 04T2032
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TP/188/05 Jul-10 8 of 8
0
500
1000
1500
2000
2500
3000
01234
VF ( V )
IF ( A )
125 °C
Tj
= 25 °C
2
2,5
3
3,5
4
4,5
5
5,5
6
110 100
t ( ms )
IFSM ( kA )
0,02
0,03
0,04
0,05
0,06
0,07
0,08
0,09
0,1
i2dt (106 A2s)
IFSM
∫
i2dt
Fig. 12
Maximum forward voltage drop
characteristics of the diode Fig. 13
Surge on-state current vs. pulse length
of the diode. Half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
Notes:
