Excelics EFA025A DATA SHEET Low Distortion GaAs Power FET * * * * * * * +21.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 5mA PER BIN RANGE ' ' 6 * * 6 Chip Thickness: 75 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz MIN TYP 19 21 MAX UNIT dBm 21 9 11 dB 9 % Power Added efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz 38 NF Noise Figure Vds=3V,Ids=15mA f=12GHz 1.5 dB GA Associated Gain Vds=3V,Ids=15mA f=12GHz 10 dB Idss Saturated Drain Current Vds=3V, Vgs=0V 35 65 Gm Transconductance Vds=3V, Vgs=0V 30 40 Vp Pinch-off Voltage Vds=3V, Ids=1.0mA -2 105 mA mS -3.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -12 -15 V BVgs Source Breakdown Voltage Igs=1.0mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS 155 ABSOLUTE1 o C/W CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 90mA Ids Forward Gate Current 6mA 1mA Igsf Input Power 19dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 880mW 730mW Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA025A DATA SHEET Low Distortion GaAs Power FET P-1dB & PAE vs. Vds 45 55 40 50 45 15 40 10 35 30 5 25 0 Pout (dBm) or PAE (%) P-1dB (dBm) 20 60 PAE (%) 25 Pout & PAE vs. Pin f = 12 GHz Ids =50% Idss 5 6 7 8 9 35 PAE 30 25 20 Pout 15 10 5 0 20 4 f = 12 GHz Vds = 8 V, Ids = 50% Idss -15 10 -10 -5 0 Drain-Source Voltage (V) 3V, 15mA (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG 0.995 0.976 0.957 0.931 0.906 0.875 0.846 0.818 0.797 0.781 0.762 0.752 0.749 0.747 0.745 0.738 0.729 0.727 0.729 0.718 0.709 0.709 0.706 0.714 0.735 0.738 ANG -13.5 -26.7 -39.7 -53.0 -63.9 -74.0 -84.0 -93.6 -102.4 -110.6 -119.0 -127.5 -134.0 -138.4 -142.8 -150.1 -157.5 -163.1 -167.9 -173.0 -175.0 178.6 173.1 166.8 162.8 161.3 Note: --- S21 --MAG 3.600 3.527 3.434 3.313 3.119 2.938 2.796 2.625 2.468 2.330 2.206 2.075 1.940 1.825 1.763 1.728 1.648 1.574 1.532 1.482 1.429 1.365 1.295 1.211 1.147 1.056 ANG 168.7 158.2 148.1 137.7 128.8 120.2 111.9 103.9 96.8 90.0 83.1 76.5 70.6 65.8 61.5 55.4 49.0 43.9 38.6 32.5 28.1 22.5 16.6 11.0 6.6 2.9 10 15 20 S-PARAMETERS S-PARAMETERS FREQ 5 Pin (dBm) 8V,Idss --- S12 --MAG 0.023 0.044 0.064 0.081 0.094 0.106 0.116 0.124 0.129 0.133 0.137 0.139 0.138 0.137 0.140 0.145 0.147 0.147 0.150 0.152 0.153 0.153 0.150 0.145 0.141 0.132 ANG 81.5 72.7 64.8 57.1 50.5 44.0 38.1 32.4 27.4 22.2 17.6 13.3 9.3 6.7 4.3 0.7 -3.4 -6.1 -8.7 -12.3 -14.5 -17.5 -20.2 -23.3 -24.7 -26.2 --- S22 --MAG 0.606 0.595 0.569 0.544 0.536 0.512 0.496 0.484 0.475 0.456 0.448 0.429 0.432 0.444 0.432 0.399 0.400 0.397 0.376 0.386 0.393 0.386 0.403 0.434 0.455 0.490 ANG -8.1 -15.9 -24.3 -33.3 -41.2 -48.3 -57.0 -64.2 -69.6 -75.0 -81.0 -86.0 -92.2 -93.6 -93.1 -99.1 -107.7 -110.9 -117.7 -129.5 -134.4 -142.4 -150.8 -158.6 -160.4 -165.6 FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG 0.96 0.954 0.923 0.898 0.871 0.848 0.824 0.811 0.785 0.77 0.762 0.756 0.757 0.756 0.761 0.762 0.763 0.766 0.762 0.751 0.73 0.71 0.707 0.71 0.72 0.712 ANG -14.6 -29.2 -42.9 -55.1 -66.3 -76.4 -85.7 -94.4 -102.5 -109.7 -116.6 -123.4 -129.6 -135.5 -140.7 -146.0 -150.2 -154.6 -158.5 -162.4 -165.4 -167.8 -169.4 -171.7 -175.6 -178.1 The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each. --- S21 --MAG 4.413 4.255 4.083 3.865 3.651 3.422 3.203 3.021 2.81 2.639 2.49 2.358 2.239 2.136 2.051 1.965 1.891 1.837 1.775 1.7 1.594 1.52 1.457 1.41 1.351 1.29 ANG 167.5 156.5 145.2 135.2 125.5 116.7 108.7 100.7 93.5 87.0 80.6 74.1 68.2 62.2 56.3 50.0 44.2 38.0 31.4 24.6 18.2 12.8 7.9 2.5 -3.6 -7.2 --- S12 --MAG 0.017 0.031 0.044 0.054 0.063 0.069 0.074 0.078 0.08 0.079 0.08 0.079 0.081 0.08 0.079 0.082 0.084 0.087 0.089 0.092 0.093 0.093 0.093 0.097 0.101 0.103 ANG 52.8 58.8 56.1 51.5 46.3 42.2 37.8 32.7 27.9 23.8 20.3 17.6 13.9 11.7 8.7 7.9 5.2 3.9 1.7 -0.7 -3.3 -3.1 -0.8 -0.2 2.4 3.8 --- S22 --MAG 0.699 0.698 0.684 0.665 0.644 0.625 0.608 0.595 0.577 0.564 0.553 0.541 0.531 0.517 0.506 0.496 0.477 0.465 0.462 0.465 0.473 0.489 0.519 0.555 0.578 0.603 ANG -5.5 -12.1 -18.9 -25.3 -31.6 -37.4 -43.0 -48.7 -54.0 -58.7 -63.4 -67.9 -72.3 -76.9 -82.2 -88.9 -96.8 -106.0 -115.8 -127.1 -138.2 -148.5 -156.4 -163.8 -170.1 -173.3 EFA025A DATA SHEET Low Distortion GaAs Power FET EFA025A Noise Parameters Vds=3V, Ids=15mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 24 26 Popt (MAG) 0.71 0.67 0.81 0.71 0.65 0.70 0.65 0.61 0.70 0.65 0.64 0.69 0.70 (ANG) 17 35 48 63 79 95 105 120 135 145 153 164 175 Nfmin (dB) 0.53 0.65 0.85 1.05 1.35 1.55 1.90 2.25 2.60 2.90 3.20 3.50 3.80 Rn/50 0.58 0.52 0.49 0.44 0.38 0.34 0.29 0.25 0.17 0.15 0.12 0.08 0.05