D45H Series PNP POWER TRANSISTORS COMPLEMENTARY TO THE D44H SERIES -30 - -80 VOLTS -10 AMP, 50 WATTS The General Electric D45H is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. PNP COLLECTOR BASE EMITTER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) Features: 404(10.26) 10078 .190(4.83) e PNP complement to D44H NPN aa Seat Low collector saturation voltage Bey + wen ba | . . .245(6.22) - SE e Excellent linearity / | TewERATURE Fast switchin + $5510.02 a 9g Tae OA | | 82818-2861 2206, 59) H .130(3.3) aie 7 TERM.1 .500(12.7)MIN. TERM.2 3511.99 TERM.3 aoe) po eR ee SES, Seeean eae 021(0.53} OT5G.38) [type | Tterw.1 | [0-220-AB| BASE | COLLECTOR | EMITTER | COLLECTOR | TERM. 2 | term.3 | Tas maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL. D45H1, 2 D45H4, 5 D45H7, 8 D45H10,11 | UNITS Collector-Emitter Voltage VCEO -30 -45 ~60 ~80 Volts Collector-Emitter Voltage Voces -30 -45 -60 ~80. Volts Emitter Base Voltage VEBO -5 -5 -5 -5 Volts Collector Current Continuous Io -10 -10 -10 -10 A Peak(1) Icom -20 -20 ~20 -20 Base Current Continuous Ip 5 -5 -5 -5 A Total Power Dissipation @ Ta = 25C Pp 1.67 1.67 1.67 1.67 Watts To = 25C 50 50 50 50 Operating and Storage Junction . Temperature Range Ty,Tstg -55 to +150 | -55 to +150| -55 to +150 -55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Rasa 75 75 75 75 C/W Thermal Resistance, Junction to Case ReJc 2.5 2.5 2.5 2.5 C/W Maximum Lead Temperature for Soldering Purposes: 4" from Case for 5 Seconds TL +260 +260 +260 +260 Cc (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. 435 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC off characteristics | SYMBOL TYP | MAX | UNIT | Collector-Emitter Sustaining Voltage (Ig = 100mA) D45H1, 2 D45H4, 5 D45H7, 8 D45H10, 11 VCEOQ(sus) -30 ~45 -60 -80 Volts Collector Cutoff Current (Vcg = Rated VcBo) icBo -10 UA Emitter Cutoff Current (VeR = -5V) lEBo -100 HA second breakdown | Second Breakdown with Base Forward Biased on characteristics | FBSOA SEE FIGURE 4 DC Current Gain (Ic = -2A, Voce = -1V) (Ic = -4A, VcE = -1V) D45H1, 4, 7, 10 D45H2, 5, 8, 11 D45H1, 4, 7, 10 D45H2, 5, 8, 11 NreE 35 60 40 Collector-Emitter Saturation Voltage (Ic = -8A, !p = -0.4A) (Ic = -8A, Ip = -0.8A) D45H1, 4, 7, 10 D45H2, 5, 8, t1 VCE(sat) Volts Base-Emitter Saturation Voltage (Ic = -8A, Ip = -0.8A) VBE(sat) Volts dynamic characteristics Collector Capacitance (Vcp = -10V, f = 1MHz) CcoBo 230 pF Current-Gain Bandwidth Product (Iq = -500mA, Voce = -10V) 40 MHz switching characteristics Resistive Load Delay Time + Rise Time Io = -5A, Ipy = -0.5A ta t tr 135 ns Storage Time Ic = -5A, | Fall Time c Bt = Ippo =-0.5A 500 tt 100 (1) Pulse Test PW = 300ms Duty Cycle < 2%. 436 Desh PARTS 2,5,8,01 os oH = 150 PARTS 1,4,7,10 Tsisorc -o01 - 10 -0.01 =o 1.0 -t00 I- COLLECTOR CUMRENT~ AMPERES : Tc- COLLECTOR CURRENT- AMPERES FIG. 1 TYPICAL GAIN CHARACTERISTICS FIG. 2 TYPICAL GAIN CHARACTERISTICS | -20 ry > o wax. tc POWER OISSIPATION Nceq DAT CEO D45H7, 8, 9 ) D45H10. 11. = 70C Te 2 85C Voeo MAX PARTS i, 2 I> Te * lore x 3 Py - POWER DISSIPATION - WATTS & Voeo MAX PARTS 4,5 Veo MAX PARTS 7,6 Te-COLLECTOR CURRENT- AMPERES t Veeo MAX PART 10,11 3 10 20 30 40 so 60 70 Vee - SOLLEGTOR TO EMITTER VOLTAGE - VOLTS FIG. 3 MAXIMUM PERMISSIBLE DC POWER DISSIPATION 01 -t0 60 100 -0 Voge COLLECTOR TO EMITTER VOLTAGE - VOLTS FIG. 4 SAFE REGION OF OPERATION 10.0 mT 1S0C meet 225C Vee(sat)' Ic/Ipg*!0 JUNCTION TO AMBIENT Voetsaty I/Ig*20 SATURATION VOLTAGES - VOLTS TRANSIENT THERMAL IMPEDANCE ~ *C/w ot 0.1 -10 -10.0 tore 10-4 10 tort 1o-* 10 to! to8 108 I~ COLLECTOR CURRENT- AMPERES TIME - SECONDS FIG.5 TYPICAL SATURATION FIG. 6 TRANSIENT THERMAL IMPEDANCE VOLTAGE CHARACTERISTICS 437