BSS63LT1G - ON Semiconductor

August, 2009 − Rev. 5

1Publication Order Number:

BSS63LT1/D

BSS63LT1G

High Voltage Transistor

PNP Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −100 Vdc

Collector−Emitter Voltage

RBE = 10 kW

VCER

−110

Vdc

Collector Current − Continuous IC−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation

Alumina Substrate, (Note 2)

TA = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

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COLLECTOR

BASE

EMITTER

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

Device Package Shipping†

ORDERING INFORMATION

BSS63LT1G SOT−23

(Pb−free)

3000/Tape & Reel

BM = Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

BM M G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BSS63LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −100 mAdc)

V(BR)CEO

−100 − −

Vdc

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IE = 0, RBE = 10 kW)

V(BR)CER

−110 − −

Vdc

Collector−Base Breakdown Voltage

(IE = −10 mAdc, IE = 0)

V(BR)CBO

−110 − −

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc)

V(BR)EBO

−6.0 − −

Vdc

Collector Cutoff Current

(VCB = −90 Vdc, IE = 0)

ICBO

− − −100

nAdc

Collector Cutoff Current

(VCE = −110 Vdc, RBE = 10 kW)

ICER

− − −10

mAdc

Emitter Cutoff Current

(VEB = −6.0 Vdc, IC = 0)

IEBO

− − −200

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −25 mAdc, VCE = −1.0 Vdc)

hFE 30

−

Collector−Emitter Saturation Voltage

(IC = −25 mAdc, IB = −2.5 mAdc)

VCE(sat)

− − −250

mVdc

Base −Emitter Saturation Voltage

(IC = −25 mAdc, IB = −2.5 mAdc)

VBE(sat)

− − −900

mVdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −25 mAdc, VCE = −5.0 Vdc, f = 20 MHz)

fT50 95 −

MHz

Case Capacitance

(IE = IC = 0, VCB = −10 Vdc, f = 1.0 MHz)

− − 20

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

BSS63LT1G

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

BSS63LT1/D

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USA/Canada

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Phone: 421 33 790 2910

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Phone: 81−3−5773−3850

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