7MBR25SC120 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 1200V / 25A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage ICP 1ms -IC PC VCES VGES IC Brake Thyristor Continuous Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Condition VCES VGES IC r ot eco Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) N Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque de Tc=25C Tc=80C Tc=25C Tc=80C for 1 device nd e mm Continuous ICP 1ms PC V RRM V DRM V RRM IT(AV) ITSM Tjw V RRM IO IFSM I2t Tj Tstg Viso 1 device w ne Tc=25C Tc=80C Tc=25C Tc=80C 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. http://store.iiic.cc/ Rating 1200 20 35 25 70 50 25 180 1200 20 25 15 50 30 110 1200 1600 1600 25 290 125 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit . n sig V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m 7MBR25SC120 IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 100 200 5.5 7.2 8.5 2.1 2.2 2.6 3000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr toff tf VF Turn-off Brake Forward on voltage Thyristor Converter Symbol Condition Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage ton tr toff tf IRRM IDM IRRM IGT V GT V TM Forward on voltage V FM Turn-off time Thermistor B VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =600V IC=25A VGE=15V RG=51 IF=25A chip terminal IF=25A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal V CC =600V IC=15A VGE=15V RG=82 V R=1200V V DM =1600V V RM =1600V VD=6V, IT=1A VD=6V, IT=1A ITM=25A chip terminal IF=25A chip terminal V R=1600V T=25C T=100C T=25/50C for nd e mm B value t No 2.1 2.2 0.35 0.25 0.45 0.08 de IRRM R Reverse current Resistance 0.35 0.25 0.45 0.08 2.3 2.4 o c e r w ne 465 3305 1.2 0.6 1.0 0.3 5000 495 3375 pF s V 3.2 350 100 200 2.6 1.2 0.6 1.0 0.3 100 1.0 1.0 100 2.5 1.15 . n sig 1.05 1.1 1.1 1.2 A nA V V ns A nA V s A mA mA mA V V V 1.5 100 520 3450 A K Thermal resistance Characteristics Item Thermal resistance ( 1 device ) Contact thermal resistance * Min. Rth(j-c) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ Characteristics Typ. Max. Unit 0.69 1.30 1.14 1.00 0.90 0.05 C/W 7MBR25SC120 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 60 60 VGE= 20V 15V VGE= 20V 15V 12V 12V 50 Collector current : Ic [ A ] Collector current : Ic [ A ] 50 40 10V 30 20 10 40 10V 30 20 10 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 60 5 10 Tj= 25C Tj= 125C 40 Collector - Emitter voltage : VCE [ V ] 8 20 e m m 4 Ic= 50A nd 10 0 0 1 2 3 t No eco 4 r Ic= 25A 2 Ic= 12.5A 0 5 5 10 Collector - Emitter voltage : VCE [ V ] 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector - Emitter voltage : VCE [ V ] 10000 Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 30 . de 6 Cies 1000 Coes 1000 25 800 20 600 15 400 10 200 5 Cres 100 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 150 Gate charge : Qg [ nC ] http://store.iiic.cc/ 200 0 250 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 50 7MBR25SC120 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51, Tj= 25C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 51, Tj= 125C 1000 1000 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 tf 500 ton tr tf 100 50 50 0 10 20 30 40 0 10 20 30 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=25A, VGE=15V, Tj= 25C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51 5000 7 Eon(125C) toff ton 4 e m m 3 2 nd tr 100 tf 50 50 t o c e r 100 n sig w ne Eon(25C) Eoff(125C) Eoff(25C) Err(125C) 1 Err(25C) 0 500 0 10 Gate resistance : Rg [ ] No . de 5 for 500 10 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 20 30 40 50 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=25A, VGE=15V, Tj= 125C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=51, Tj<=125C 300 20 250 15 Eon Collector current : Ic [ A ] Switching time : ton, tr, toff, tf [ nsec ] 6 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 40 Collector current : Ic [ A ] 10 200 SCSOA (non-repetitive pulse) 150 100 5 Eoff 50 RBSOA (Repetitive pulse) Err 0 0 10 50 100 500 Gate resistance : Rg [ ] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 IGBT Module 7MBR25SC120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=51 [ Inverter ] Forward current vs. Forward on voltage (typ.) 60 300 Tj=125C Tj=25C 50 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] trr(125C) 40 30 20 10 100 trr(25C) Irr(125C) Irr(25C) 0 10 0 1 2 3 4 0 10 20 30 40 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) [ Thyristor ] On-state current vs. On-state voltage (typ.) 60 100 Tj= 25C Tjw= 25C Tjw= 125C Tj= 125C Instantaneous on-state current [ A ] Forward current : IF [ A ] 50 40 20 10 0 0.0 de ew n for 30 0.4 0.8 10 nd e mm o c e r 1.2 t 1.6 2 0.0 2.0 0.4 Forward on voltage : VFM [ V ] No . n sig 0.8 1.2 1.6 2.0 Instantaneous on-state voltage [ V ] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 5 200 FWD[Inverter] IGBT[Brake] Thyristor Conv. Diode IGBT[Inverter] 1 Resistance : R [ k ] Thermal resistanse : Rth(j-c) [ C/W ] 100 0.1 0.01 0.001 0.01 0.1 1 10 1 0.1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 80 100 Temperature [ C ] http://store.iiic.cc/ 120 140 160 180 7MBR25SC120 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 35 35 VGE= 20V15V 30 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V 15V 12V 30 20 10V 15 10 5 12V 10V 20 15 10 5 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 35 5 10 Tj= 25C Tj= 125C 20 8 ew n for 15 e m m 10 4 n sig Ic= 30A nd 5 0 0 1 2 o c e r 3 t No 4 Ic= 15A 2 Ic= 7.5A 0 5 5 Collector - Emitter voltage : VCE [ V ] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] . de 6 Cies 1000 Coes 100 1000 25 800 20 600 15 400 10 200 5 Cres 50 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 Gate charge : Qg [ nC ] http://store.iiic.cc/ 0 150 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 25 Collector - Emitter voltage : VCE [ V ] 30 IGBT Module 7MBR25SC120 Outline Drawings, mm . de ew n for Marking : White mm t No n sig d en o c e r Marking : White Equivalent Circuit Schematic [ Converter ] [ Thyristor ] 21 (P) 26 [ Brake ] [ Inverter ] [ Thermistor ] 22(P1) 8 20 (Gu) 25 1(R) 2(S) 3(T) 19(Eu) 7(B) 14(Gb) 23(N) 18 (Gv ) 16 (Gw) 17(Ev ) 4(U) 15(Ew) 5(V) 13(Gx) 24(N1) 12(Gy ) 6(W) 11(Gz) 10(En) http://store.iiic.cc/ 9