7MBR25SC120 IGBT Modules
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 25A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Thyristor Brake Inverter
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
1200
±20
35
25
70
50
25
180
1200
±20
25
15
50
30
110
1200
1600
1600
25
290
125
1600
25
260
338
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
保守移行機種
Not recommend for new design.
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Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Thyristor Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=25mA
VGE=15V, Ic=25A chip
terminal
VGE=0V, V CE=10V, f=1MHz
VCC=600V
IC=25A
VGE=±15V
RG=51Ω
IF=25A chip
terminal
IF=25A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=15A, VGE=15V chip
terminal
VCC=600V
IC=15A
VGE=±15V
RG=82Ω
VR=1200V
VDM=1600V
VRM=1600V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=25A chip
terminal
IF=25A chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
100
200
8.5
2.6
1.2
0.6
1.0
0.3
3.2
350
100
200
2.6
1.2
0.6
1.0
0.3
100
1.0
1.0
100
2.5
1.15
1.5
100
3000
5.5 7.2
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
0.69
1.30
1.14
1.00 °C/W
0.90
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module 7MBR25SC120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
2.1
2.2
0.35
0.25
0.45
0.08
2.3
2.4
2.1
2.2
0.35
0.25
0.45
0.08
1.05
1.1
1.1
1.2
5000
465 495 520
3305 3375 3450
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR25SC120
Characteristics (Representative)
012345
0
10
20
30
40
50
60
8V
10V
12V
15VVGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
Collector curre n t : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector curre n t : Ic [ A ]
012345
0
10
20
30
40
50
60
Tj = 25°C Tj= 125°C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector curre n t : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 1 2.5A
Ic= 2 5A
Ic= 5 0A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Ga te - Emitte r vo lta ge : VGE [ V ]
0 5 10 15 20 25 30 35
100
1000
10000
[ Inverter ]
Capacitance v s. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 50 100 150 200 250
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
Ga te charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR25SC120
0 10203040
50
100
500
1000
ton
tr
toff
tf
[ In verter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=51Ω, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collec to r cu rrent : Ic [ A ]
0 10203040
50
100
500
1000
tf
tr
ton
toff
[ In verter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 51Ω, Tj= 125°C
Collec to r cu rrent : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10 50 100 500
50
100
500
1000
5000
toff
ton
tr
tf
[ In verter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V, Tj= 25°C
Ga te resista nce : Rg [ Ω ]
Switching time : ton, tr, toff, tf [ nsec ]
0 1020304050
0
1
2
3
4
5
6
7
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
[ In verter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=51Ω
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collec to r cu rrent : Ic [ A ]
10 50 100 500
0
5
10
15
20
[ In verter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Ga te resista nce : Rg [ Ω ]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
250
300
SCSOA
(non-repetitive pulse)
RBSOA
(Repetitive pu l s e)
[ In verter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=51Ω, Tj<=125°C
Collec to r - E m itte r vo lta ge : VCE [ V ]
Collector current : Ic [ A ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR25SC120
01234
0
10
20
30
40
50
60
0.0 0.4 0.8 1.2 1.6 2.0
2
10
100
Tj=25°C
Tj=125°C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forwa rd on voltage : VF [ V ]
010203040
10
100
300
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=51Ω
Forwa rd cu rrent : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0 0.4 0.8 1.2 1.6 2.0
0
10
20
30
40
50
60
Tj= 25°C Tj= 125°C
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forwa rd on voltage : VFM [ V ]
Forward current : IF [ A ]
0.001 0.01 0.1 1
0.01
0.1
1
5
Thyristor
Conv. Diode
Transient thermal re sistance
Thermal resistan se : Rth(j-c) [ °C/W ]
Pu lse width : P w [ sec ]
FWD[Inverter]
IGBT[Brake]
IGBT[Inverter]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [ °C ]
Resistance : R [ kΩ ]
[ Thyristor ]
On-state current vs. On-state voltage (typ.)
Tjw= 125°C Tjw= 25°C
Instantaneous on-state current [ A ]
In stantan e ous on-sta te voltage [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR25SC120
012345
0
5
10
15
20
25
30
35
8V
10V
12V
15V
VGE= 20 V
[ Brake ]
Collector current v s. Collector-Emitter voltage
Tj= 25°C (typ.)
Collector current : Ic [ A ]
Collecto r - Emitter volt a ge : VCE [ V ]
012345
0
5
10
15
20
25
30
35
8V
10V
12V
15VVGE= 20 V
[ Brake ]
Collector current v s. Collector-Emitter voltage
Tj= 125°C (typ.)
Collecto r - Emitter volt a ge : VCE [ V ]
Collector current : Ic [ A ]
012345
0
5
10
15
20
25
30
35
Tj= 2 5°C Tj= 125°C
[ Brake ]
Collector current v s. Collector-Emitter voltage
VGE=15V (typ.)
Collecto r - Emitter volt a ge : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 7 .5A
Ic= 15A
Ic= 30A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Collector - Em it ter voltage : VCE [ V ]
Ga te - E m itter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
50
100
1000
5000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE = 0V, f= 1 MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collecto r - Emitter volt a ge : VCE [ V ]
Coes
Cres
Cies
050100150
0
200
400
600
800
1000
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=15A, Tj= 25°C
Ga te charge : Qg [ nC ]
Collector - Em it ter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR25SC120
Outline Drawings, mm
Equivalent Circuit Schematic
Marking : White
Marking : White
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brak e ] [ Inverter ] [ T hermistor ]
14(Gb)
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brak e ] [ Inverter ] [ T hermistor ]
14(Gb)
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
