CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Ultrafast recovery time for high efficiency
- Low forward voltage, low power loss
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 400 600 V
V
RMS
35 70 105 140 280 420 V
V
DC
50 100 150 200 400 600 V
I
F(AV)
A
Trr ns
R
θjL O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1405061 Version: H14
MUR105S thru MUR160S
Taiwan Semiconductor
Surface Mount Ultrafast Power Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MUR
120S
MECHANICAL DATA
Case: DO-214AA (SMB) DO-214AA (SMB)
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
MUR
140S
MUR
160S Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
PARAMETER SYMBOL MUR
105S
MUR
110S
MUR
115S
I
R
μA
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Maximum reverse recovery time (Note 2)
Typical thermal resistance 17
50
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A, T
J
=25℃
@ 1 A, T
J
=150℃
V
F
V
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=150 ℃
25
Operating junction temperature range - 55 to +175
Storage temperature range - 55 to +175
Note 1: Pulse test with PW=300μs, 1% duty cycle
40 35
0.875
0.710
1.25
1.05
2
50
5
150