TIP30CTU - ON SEMICONDUCTOR

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TIP30C — PNP Epit axial Silicon Transistor

TIP30C Rev. 1.1.0

November 2014

TIP30C

PNP Epitaxial Silicon Transistor

Features

• Medium Power Linear Switching Applications

• Complementary to TIP29 Series

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

TIP30C TIP30C TO-220 3L (Single Gauge) Bulk

TIP30CTU TIP30C TO-220 3L (Single Gauge) Rail

Symbol Parameter Value Unit

VCBO Collector-Base Voltage -100 V

VCEO Collector-Emitter Voltage -100 V

VEBO Emitter-Base Voltage -5 V

ICCollector Current (DC) -1 A

ICP Collector Current (Pulse) -3 A

IBBase Current -0.4 A

TJJunction Temperat ure 150 °C

TSTG Storage Temperature Range -65 to 150 °C

1.Base 2.Collector 3.Emitter

1TO-220

TIP30C — PNP Epit axial Silicon Transistor

TIP30C Rev. 1.1.0 2

Thermal Characteristics

Values are at TC = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Note:

1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.

Symbol Parameter Value Unit

PC Collector Dissipation (TA = 25°C) 2 W

Collector Dissipation (TC = 25°C) 30

Symbol Parameter Conditions Min. Max. Unit

VCEO(sus) Collector-Emitter Sustaining Voltage(1) IC = -30 mA, IB = 0 -100 V

ICEO Collector Cut-Off Current VCE = -60 V, IB = 0-0.3mA

ICES Collector Cut-Off Current VCE = -100 V, VEB = 0 -200 μA

IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -1.0 mA

hFE DC Current Gain(1) VCE = -4 V, IC = -0.2 A 40

VCE = -4 V, IC = -1 A 15 75

VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -1 A, IB = -125 mA -0.7 V

VBE(on) Base-Emitter On Voltage(1) VCE = -4 V, IC = -1 A -1.3 V

fT Current Gain Bandwidth Product VCE = -10 V, IC = -200 mA,

f = 1 MHz 3.0 MHz

TIP30C — PNP Epit axial Silicon Transistor

TIP30C Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 3. Safe Operating Area Figure 4. Power Derating

-1 -10 -100 -1000 -10000

100

1000 VCE = -4V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-1 -10 -100 -1000 -10000

-10

-100

-1000

-10000 IC/IB = 10

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

-10 -100

-0.1

-1

-10

TIP30C VCEO MAX.

TIP30B VCEO MAX.

TIP30A VCEO MAX.

TIP30 VCEO MAX.

IC(MAX) (DC)

IC(MAX) (PULSE)

5ms

1ms

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175 200

PC[W], POWER DISSIPATION

TC[oC], CASE TEMPERATURE

TIP30C — PNP Epit axial Silicon Transistor

TIP30C Rev. 1.1.0 4

Physical Dimensions

Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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Rev. I72

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